Improvement in detection limit for time-of-flight SIMS analysis of dopants in GaN structures

Secondary ion mass spectrometry (SIMS) has been used extensively to monitor dopant levels in semiconductor materials. The preponderance of these measurements has been made with magnetic sector or quadrupole analyzers. Use of time-of-flight (ToF) analyzers has been limited because of an inability to...

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Veröffentlicht in:	Journal of vacuum science and technology. B, Nanotechnology & microelectronics Nanotechnology & microelectronics, 2018-05, Vol.36 (3)
Hauptverfasser:	Klump, Andrew, Zhou, Chuanzhen, Stevie, Frederick A., Collazo, Ramón, Sitar, Zlatko
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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