Irradiation-induced defect formation and damage accumulation in single crystal CeO2

Here, the accumulation of irradiation-induced disorder in single crystal CeO2 has been investigated over a wide range of ion fluences. Room temperature irradiations of epitaxial CeO2 thin films using 2 MeV Au2+ ions were carried out up to a total fluence of 1.3 x 1016 cm–2 Post-irradiation disorder...

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Veröffentlicht in:	Journal of nuclear materials 2017-11, Vol.498 (C)
Hauptverfasser:	Graham, Joseph T., Zhang, Yanwen, Weber, William J.
Format:	Artikel
Sprache:	eng
Schlagworte:	NUCLEAR FUEL CYCLE AND FUEL MATERIALS
Online-Zugang:	Volltext
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