Enhanced Lithiation of Doped 6H Silicon Carbide (0001) via High Temperature Vacuum Growth of Epitaxial Graphene

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Veröffentlicht in:	Journal of physical chemistry. C 2012-09, Vol.116 (39)
Hauptverfasser:	Lipson, Albert L., Chattopadhyay, Sudeshna, Karmel, Hunter J., Fister, Timothy T., Emery, Jonathan D., Dravid, Vinayak P., Thackeray, Michael M., Fenter, Paul A., Bedzyk, Michael J., Hersam, Mark C.
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Sprache:	eng
Schlagworte:	energy storage (including batteries and capacitors), charge transport, materials and chemistry by design, synthesis (novel materials)
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doi_str_mv	10.1021/jp307220y
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source	American Chemical Society Journals
subjects	energy storage (including batteries and capacitors), charge transport, materials and chemistry by design, synthesis (novel materials)
title	Enhanced Lithiation of Doped 6H Silicon Carbide (0001) via High Temperature Vacuum Growth of Epitaxial Graphene
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