Electrostatic carrier doping of GdTiO 3 /SrTiO 3 interfaces
Heterostructures and superlattices consisting of a prototype Mott insulator, GdTiO 3 , and the band insulator SrTiO 3 are grown by molecular beam epitaxy and show intrinsic electronic reconstruction, approximately ½ electron per surface unit cell at each GdTiO 3 /SrTiO 3 interface. The sheet carrier...
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| Veröffentlicht in: | Applied physics letters 2011-12, Vol.99 (23), p.232116-232116-4 |
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| container_end_page | 232116-4 |
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| container_issue | 23 |
| container_start_page | 232116 |
| container_title | Applied physics letters |
| container_volume | 99 |
| creator | Moetakef, Pouya Cain, Tyler A. Ouellette, Daniel G. Zhang, Jack Y. Klenov, Dmitri O. Janotti, Anderson Van de Walle, Chris G. Rajan, Siddharth Allen, S. James Stemmer, Susanne |
| description | Heterostructures and superlattices consisting of a prototype Mott insulator, GdTiO
3
, and the band insulator SrTiO
3
are grown by molecular beam epitaxy and show intrinsic electronic reconstruction, approximately ½ electron per surface unit cell at each GdTiO
3
/SrTiO
3
interface. The sheet carrier densities in all structures containing more than one unit cell of SrTiO
3
are independent of layer thicknesses and growth sequences, indicating that the mobile carriers are in a high concentration, two-dimensional electron gas bound to the interface. These carrier densities closely meet the electrostatic requirements for compensating the fixed charge at these polar interfaces. Based on the experimental results, insights into interfacial band alignments, charge distribution, and the influence of different electrostatic boundary conditions are obtained. |
| doi_str_mv | 10.1063/1.3669402 |
| format | Article |
| fullrecord | <record><control><sourceid>scitation_osti_</sourceid><recordid>TN_cdi_osti_scitechconnect_1380882</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>apl</sourcerecordid><originalsourceid>FETCH-LOGICAL-o152t-427c14c350df40eb93dc871f1e332519a6ce96d7e692d40e9ff18b66281785c3</originalsourceid><addsrcrecordid>eNpVkM1LAzEQxYMoWKsH_4PF-7aZzOYLQZBSq1Dowb2HNB8aqbslm4v_vVu2l55mhvcY3u8R8gh0AVTgEhYohG4ouyIzoFLWCKCuyYxSirXQHG7J3TD8jCdniDPyvD4EV3I_FFuSq5zNOYVc-f6Yuq-qj9XGt2lXYbX8zNOSuhJytC4M9-Qm2sMQHs5zTtq3dbt6r7e7zcfqdVv3wFmpGyYdNA459bGhYa_ROyUhQkBkHLQVLmjhZRCa-dGgYwS1F4IpkIo7nJOn6e0YMpnBpRLct-u7bgxuABVVio2ml8l00keUvjPHnH5t_jNAzakaA-ZczQWymZDxH2ucW1A</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype></control><display><type>article</type><title>Electrostatic carrier doping of GdTiO 3 /SrTiO 3 interfaces</title><source>AIP Journals Complete</source><source>AIP Digital Archive</source><source>Alma/SFX Local Collection</source><creator>Moetakef, Pouya ; Cain, Tyler A. ; Ouellette, Daniel G. ; Zhang, Jack Y. ; Klenov, Dmitri O. ; Janotti, Anderson ; Van de Walle, Chris G. ; Rajan, Siddharth ; Allen, S. James ; Stemmer, Susanne</creator><creatorcontrib>Moetakef, Pouya ; Cain, Tyler A. ; Ouellette, Daniel G. ; Zhang, Jack Y. ; Klenov, Dmitri O. ; Janotti, Anderson ; Van de Walle, Chris G. ; Rajan, Siddharth ; Allen, S. James ; Stemmer, Susanne ; Energy Frontier Research Centers (EFRC) (United States). Center for Energy Efficient Materials (CEEM)</creatorcontrib><description>Heterostructures and superlattices consisting of a prototype Mott insulator, GdTiO
3
, and the band insulator SrTiO
3
are grown by molecular beam epitaxy and show intrinsic electronic reconstruction, approximately ½ electron per surface unit cell at each GdTiO
3
/SrTiO
3
interface. The sheet carrier densities in all structures containing more than one unit cell of SrTiO
3
are independent of layer thicknesses and growth sequences, indicating that the mobile carriers are in a high concentration, two-dimensional electron gas bound to the interface. These carrier densities closely meet the electrostatic requirements for compensating the fixed charge at these polar interfaces. Based on the experimental results, insights into interfacial band alignments, charge distribution, and the influence of different electrostatic boundary conditions are obtained.</description><identifier>ISSN: 0003-6951</identifier><identifier>EISSN: 1077-3118</identifier><identifier>DOI: 10.1063/1.3669402</identifier><identifier>CODEN: APPLAB</identifier><language>eng</language><publisher>United States: American Institute of Physics</publisher><subject>solar (photovoltaic), solid state lighting, phonons, thermoelectric, bio-inspired, energy storage (including batteries and capacitors), electrodes - solar, defects, charge transport, materials and chemistry by design, optics, synthesis (novel materials), synthesis (self-assembly), synthesis (scalable processing)</subject><ispartof>Applied physics letters, 2011-12, Vol.99 (23), p.232116-232116-4</ispartof><rights>2011 American Institute of Physics</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><cites>FETCH-LOGICAL-o152t-427c14c350df40eb93dc871f1e332519a6ce96d7e692d40e9ff18b66281785c3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://pubs.aip.org/apl/article-lookup/doi/10.1063/1.3669402$$EHTML$$P50$$Gscitation$$H</linktohtml><link.rule.ids>230,314,776,780,790,881,1553,4497,27903,27904,76130,76136</link.rule.ids><backlink>$$Uhttps://www.osti.gov/biblio/1380882$$D View this record in Osti.gov$$Hfree_for_read</backlink></links><search><creatorcontrib>Moetakef, Pouya</creatorcontrib><creatorcontrib>Cain, Tyler A.</creatorcontrib><creatorcontrib>Ouellette, Daniel G.</creatorcontrib><creatorcontrib>Zhang, Jack Y.</creatorcontrib><creatorcontrib>Klenov, Dmitri O.</creatorcontrib><creatorcontrib>Janotti, Anderson</creatorcontrib><creatorcontrib>Van de Walle, Chris G.</creatorcontrib><creatorcontrib>Rajan, Siddharth</creatorcontrib><creatorcontrib>Allen, S. James</creatorcontrib><creatorcontrib>Stemmer, Susanne</creatorcontrib><creatorcontrib>Energy Frontier Research Centers (EFRC) (United States). Center for Energy Efficient Materials (CEEM)</creatorcontrib><title>Electrostatic carrier doping of GdTiO 3 /SrTiO 3 interfaces</title><title>Applied physics letters</title><description>Heterostructures and superlattices consisting of a prototype Mott insulator, GdTiO
3
, and the band insulator SrTiO
3
are grown by molecular beam epitaxy and show intrinsic electronic reconstruction, approximately ½ electron per surface unit cell at each GdTiO
3
/SrTiO
3
interface. The sheet carrier densities in all structures containing more than one unit cell of SrTiO
3
are independent of layer thicknesses and growth sequences, indicating that the mobile carriers are in a high concentration, two-dimensional electron gas bound to the interface. These carrier densities closely meet the electrostatic requirements for compensating the fixed charge at these polar interfaces. Based on the experimental results, insights into interfacial band alignments, charge distribution, and the influence of different electrostatic boundary conditions are obtained.</description><subject>solar (photovoltaic), solid state lighting, phonons, thermoelectric, bio-inspired, energy storage (including batteries and capacitors), electrodes - solar, defects, charge transport, materials and chemistry by design, optics, synthesis (novel materials), synthesis (self-assembly), synthesis (scalable processing)</subject><issn>0003-6951</issn><issn>1077-3118</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2011</creationdate><recordtype>article</recordtype><recordid>eNpVkM1LAzEQxYMoWKsH_4PF-7aZzOYLQZBSq1Dowb2HNB8aqbslm4v_vVu2l55mhvcY3u8R8gh0AVTgEhYohG4ouyIzoFLWCKCuyYxSirXQHG7J3TD8jCdniDPyvD4EV3I_FFuSq5zNOYVc-f6Yuq-qj9XGt2lXYbX8zNOSuhJytC4M9-Qm2sMQHs5zTtq3dbt6r7e7zcfqdVv3wFmpGyYdNA459bGhYa_ROyUhQkBkHLQVLmjhZRCa-dGgYwS1F4IpkIo7nJOn6e0YMpnBpRLct-u7bgxuABVVio2ml8l00keUvjPHnH5t_jNAzakaA-ZczQWymZDxH2ucW1A</recordid><startdate>20111205</startdate><enddate>20111205</enddate><creator>Moetakef, Pouya</creator><creator>Cain, Tyler A.</creator><creator>Ouellette, Daniel G.</creator><creator>Zhang, Jack Y.</creator><creator>Klenov, Dmitri O.</creator><creator>Janotti, Anderson</creator><creator>Van de Walle, Chris G.</creator><creator>Rajan, Siddharth</creator><creator>Allen, S. James</creator><creator>Stemmer, Susanne</creator><general>American Institute of Physics</general><general>American Institute of Physics (AIP)</general><scope>OTOTI</scope></search><sort><creationdate>20111205</creationdate><title>Electrostatic carrier doping of GdTiO 3 /SrTiO 3 interfaces</title><author>Moetakef, Pouya ; Cain, Tyler A. ; Ouellette, Daniel G. ; Zhang, Jack Y. ; Klenov, Dmitri O. ; Janotti, Anderson ; Van de Walle, Chris G. ; Rajan, Siddharth ; Allen, S. James ; Stemmer, Susanne</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-o152t-427c14c350df40eb93dc871f1e332519a6ce96d7e692d40e9ff18b66281785c3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2011</creationdate><topic>solar (photovoltaic), solid state lighting, phonons, thermoelectric, bio-inspired, energy storage (including batteries and capacitors), electrodes - solar, defects, charge transport, materials and chemistry by design, optics, synthesis (novel materials), synthesis (self-assembly), synthesis (scalable processing)</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Moetakef, Pouya</creatorcontrib><creatorcontrib>Cain, Tyler A.</creatorcontrib><creatorcontrib>Ouellette, Daniel G.</creatorcontrib><creatorcontrib>Zhang, Jack Y.</creatorcontrib><creatorcontrib>Klenov, Dmitri O.</creatorcontrib><creatorcontrib>Janotti, Anderson</creatorcontrib><creatorcontrib>Van de Walle, Chris G.</creatorcontrib><creatorcontrib>Rajan, Siddharth</creatorcontrib><creatorcontrib>Allen, S. James</creatorcontrib><creatorcontrib>Stemmer, Susanne</creatorcontrib><creatorcontrib>Energy Frontier Research Centers (EFRC) (United States). Center for Energy Efficient Materials (CEEM)</creatorcontrib><collection>OSTI.GOV</collection><jtitle>Applied physics letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Moetakef, Pouya</au><au>Cain, Tyler A.</au><au>Ouellette, Daniel G.</au><au>Zhang, Jack Y.</au><au>Klenov, Dmitri O.</au><au>Janotti, Anderson</au><au>Van de Walle, Chris G.</au><au>Rajan, Siddharth</au><au>Allen, S. James</au><au>Stemmer, Susanne</au><aucorp>Energy Frontier Research Centers (EFRC) (United States). Center for Energy Efficient Materials (CEEM)</aucorp><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Electrostatic carrier doping of GdTiO 3 /SrTiO 3 interfaces</atitle><jtitle>Applied physics letters</jtitle><date>2011-12-05</date><risdate>2011</risdate><volume>99</volume><issue>23</issue><spage>232116</spage><epage>232116-4</epage><pages>232116-232116-4</pages><issn>0003-6951</issn><eissn>1077-3118</eissn><coden>APPLAB</coden><abstract>Heterostructures and superlattices consisting of a prototype Mott insulator, GdTiO
3
, and the band insulator SrTiO
3
are grown by molecular beam epitaxy and show intrinsic electronic reconstruction, approximately ½ electron per surface unit cell at each GdTiO
3
/SrTiO
3
interface. The sheet carrier densities in all structures containing more than one unit cell of SrTiO
3
are independent of layer thicknesses and growth sequences, indicating that the mobile carriers are in a high concentration, two-dimensional electron gas bound to the interface. These carrier densities closely meet the electrostatic requirements for compensating the fixed charge at these polar interfaces. Based on the experimental results, insights into interfacial band alignments, charge distribution, and the influence of different electrostatic boundary conditions are obtained.</abstract><cop>United States</cop><pub>American Institute of Physics</pub><doi>10.1063/1.3669402</doi></addata></record> |
| fulltext | fulltext |
| identifier | ISSN: 0003-6951 |
| ispartof | Applied physics letters, 2011-12, Vol.99 (23), p.232116-232116-4 |
| issn | 0003-6951 1077-3118 |
| language | eng |
| recordid | cdi_osti_scitechconnect_1380882 |
| source | AIP Journals Complete; AIP Digital Archive; Alma/SFX Local Collection |
| subjects | solar (photovoltaic), solid state lighting, phonons, thermoelectric, bio-inspired, energy storage (including batteries and capacitors), electrodes - solar, defects, charge transport, materials and chemistry by design, optics, synthesis (novel materials), synthesis (self-assembly), synthesis (scalable processing) |
| title | Electrostatic carrier doping of GdTiO 3 /SrTiO 3 interfaces |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-27T06%3A13%3A31IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-scitation_osti_&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Electrostatic%20carrier%20doping%20of%20GdTiO%203%20/SrTiO%203%20interfaces&rft.jtitle=Applied%20physics%20letters&rft.au=Moetakef,%20Pouya&rft.aucorp=Energy%20Frontier%20Research%20Centers%20(EFRC)%20(United%20States).%20Center%20for%20Energy%20Efficient%20Materials%20(CEEM)&rft.date=2011-12-05&rft.volume=99&rft.issue=23&rft.spage=232116&rft.epage=232116-4&rft.pages=232116-232116-4&rft.issn=0003-6951&rft.eissn=1077-3118&rft.coden=APPLAB&rft_id=info:doi/10.1063/1.3669402&rft_dat=%3Cscitation_osti_%3Eapl%3C/scitation_osti_%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true |