Influence of Mn dopants on InAs/GaAs quantum dot electronic states

Gespeichert in:
Bibliographische Detailangaben
Veröffentlicht in:Applied physics letters 2011-04, Vol.98 (14)
Hauptverfasser: Dasika, V. D., Semichaevsky, A. V., Petropoulos, J. P., Dibbern, J. C., Dangelewicz, A. M., Holub, M., Bhattacharya, P. K., Zide, J. M. O., Johnson, H. T., Goldman, R. S.
Format: Artikel
Sprache:eng
Schlagworte:
Online-Zugang:Volltext
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
container_end_page
container_issue 14
container_start_page
container_title Applied physics letters
container_volume 98
creator Dasika, V. D.
Semichaevsky, A. V.
Petropoulos, J. P.
Dibbern, J. C.
Dangelewicz, A. M.
Holub, M.
Bhattacharya, P. K.
Zide, J. M. O.
Johnson, H. T.
Goldman, R. S.
description
doi_str_mv 10.1063/1.3567510
format Article
fullrecord <record><control><sourceid>osti</sourceid><recordid>TN_cdi_osti_scitechconnect_1380507</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>1380507</sourcerecordid><originalsourceid>FETCH-osti_scitechconnect_13805073</originalsourceid><addsrcrecordid>eNqNizsOwjAQRC0EEuFTcAOLPskulpNQBsQnBR19ZBlHBIU1sM79ScEBqEbz5o0QK4QEIVMpJkpnuUYYiQghz2OFWIxFBAAqzrYap2LG_Biq3igViV1FTdc7sk76Rl5I3vzLUGDpSVZUcnoyJct3P7D-OYxBus7Z8PHUWsnBBMcLMWlMx275y7lYHw_X_Tn2HNqabRucvVtPNPxqVAVoyNVf0heXej3C</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype></control><display><type>article</type><title>Influence of Mn dopants on InAs/GaAs quantum dot electronic states</title><source>AIP Journals Complete</source><source>AIP Digital Archive</source><source>Alma/SFX Local Collection</source><creator>Dasika, V. D. ; Semichaevsky, A. V. ; Petropoulos, J. P. ; Dibbern, J. C. ; Dangelewicz, A. M. ; Holub, M. ; Bhattacharya, P. K. ; Zide, J. M. O. ; Johnson, H. T. ; Goldman, R. S.</creator><creatorcontrib>Dasika, V. D. ; Semichaevsky, A. V. ; Petropoulos, J. P. ; Dibbern, J. C. ; Dangelewicz, A. M. ; Holub, M. ; Bhattacharya, P. K. ; Zide, J. M. O. ; Johnson, H. T. ; Goldman, R. S. ; Energy Frontier Research Centers (EFRC) (United States). Center for Solar and Thermal Energy Conversion (CSTEC)</creatorcontrib><identifier>ISSN: 0003-6951</identifier><identifier>EISSN: 1077-3118</identifier><identifier>DOI: 10.1063/1.3567510</identifier><language>eng</language><publisher>United States: American Institute of Physics (AIP)</publisher><subject>solar (photovoltaic), solar (thermal), phonons, thermal conductivity, thermoelectric, electrodes - solar, defects, charge transport, materials and chemistry by design, optics, synthesis (novel materials), synthesis (self-assembly)</subject><ispartof>Applied physics letters, 2011-04, Vol.98 (14)</ispartof><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>230,314,776,780,881,27901,27902</link.rule.ids><backlink>$$Uhttps://www.osti.gov/biblio/1380507$$D View this record in Osti.gov$$Hfree_for_read</backlink></links><search><creatorcontrib>Dasika, V. D.</creatorcontrib><creatorcontrib>Semichaevsky, A. V.</creatorcontrib><creatorcontrib>Petropoulos, J. P.</creatorcontrib><creatorcontrib>Dibbern, J. C.</creatorcontrib><creatorcontrib>Dangelewicz, A. M.</creatorcontrib><creatorcontrib>Holub, M.</creatorcontrib><creatorcontrib>Bhattacharya, P. K.</creatorcontrib><creatorcontrib>Zide, J. M. O.</creatorcontrib><creatorcontrib>Johnson, H. T.</creatorcontrib><creatorcontrib>Goldman, R. S.</creatorcontrib><creatorcontrib>Energy Frontier Research Centers (EFRC) (United States). Center for Solar and Thermal Energy Conversion (CSTEC)</creatorcontrib><title>Influence of Mn dopants on InAs/GaAs quantum dot electronic states</title><title>Applied physics letters</title><subject>solar (photovoltaic), solar (thermal), phonons, thermal conductivity, thermoelectric, electrodes - solar, defects, charge transport, materials and chemistry by design, optics, synthesis (novel materials), synthesis (self-assembly)</subject><issn>0003-6951</issn><issn>1077-3118</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2011</creationdate><recordtype>article</recordtype><recordid>eNqNizsOwjAQRC0EEuFTcAOLPskulpNQBsQnBR19ZBlHBIU1sM79ScEBqEbz5o0QK4QEIVMpJkpnuUYYiQghz2OFWIxFBAAqzrYap2LG_Biq3igViV1FTdc7sk76Rl5I3vzLUGDpSVZUcnoyJct3P7D-OYxBus7Z8PHUWsnBBMcLMWlMx275y7lYHw_X_Tn2HNqabRucvVtPNPxqVAVoyNVf0heXej3C</recordid><startdate>20110404</startdate><enddate>20110404</enddate><creator>Dasika, V. D.</creator><creator>Semichaevsky, A. V.</creator><creator>Petropoulos, J. P.</creator><creator>Dibbern, J. C.</creator><creator>Dangelewicz, A. M.</creator><creator>Holub, M.</creator><creator>Bhattacharya, P. K.</creator><creator>Zide, J. M. O.</creator><creator>Johnson, H. T.</creator><creator>Goldman, R. S.</creator><general>American Institute of Physics (AIP)</general><scope>OTOTI</scope></search><sort><creationdate>20110404</creationdate><title>Influence of Mn dopants on InAs/GaAs quantum dot electronic states</title><author>Dasika, V. D. ; Semichaevsky, A. V. ; Petropoulos, J. P. ; Dibbern, J. C. ; Dangelewicz, A. M. ; Holub, M. ; Bhattacharya, P. K. ; Zide, J. M. O. ; Johnson, H. T. ; Goldman, R. S.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-osti_scitechconnect_13805073</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2011</creationdate><topic>solar (photovoltaic), solar (thermal), phonons, thermal conductivity, thermoelectric, electrodes - solar, defects, charge transport, materials and chemistry by design, optics, synthesis (novel materials), synthesis (self-assembly)</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Dasika, V. D.</creatorcontrib><creatorcontrib>Semichaevsky, A. V.</creatorcontrib><creatorcontrib>Petropoulos, J. P.</creatorcontrib><creatorcontrib>Dibbern, J. C.</creatorcontrib><creatorcontrib>Dangelewicz, A. M.</creatorcontrib><creatorcontrib>Holub, M.</creatorcontrib><creatorcontrib>Bhattacharya, P. K.</creatorcontrib><creatorcontrib>Zide, J. M. O.</creatorcontrib><creatorcontrib>Johnson, H. T.</creatorcontrib><creatorcontrib>Goldman, R. S.</creatorcontrib><creatorcontrib>Energy Frontier Research Centers (EFRC) (United States). Center for Solar and Thermal Energy Conversion (CSTEC)</creatorcontrib><collection>OSTI.GOV</collection><jtitle>Applied physics letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Dasika, V. D.</au><au>Semichaevsky, A. V.</au><au>Petropoulos, J. P.</au><au>Dibbern, J. C.</au><au>Dangelewicz, A. M.</au><au>Holub, M.</au><au>Bhattacharya, P. K.</au><au>Zide, J. M. O.</au><au>Johnson, H. T.</au><au>Goldman, R. S.</au><aucorp>Energy Frontier Research Centers (EFRC) (United States). Center for Solar and Thermal Energy Conversion (CSTEC)</aucorp><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Influence of Mn dopants on InAs/GaAs quantum dot electronic states</atitle><jtitle>Applied physics letters</jtitle><date>2011-04-04</date><risdate>2011</risdate><volume>98</volume><issue>14</issue><issn>0003-6951</issn><eissn>1077-3118</eissn><cop>United States</cop><pub>American Institute of Physics (AIP)</pub><doi>10.1063/1.3567510</doi></addata></record>
fulltext fulltext
identifier ISSN: 0003-6951
ispartof Applied physics letters, 2011-04, Vol.98 (14)
issn 0003-6951
1077-3118
language eng
recordid cdi_osti_scitechconnect_1380507
source AIP Journals Complete; AIP Digital Archive; Alma/SFX Local Collection
subjects solar (photovoltaic), solar (thermal), phonons, thermal conductivity, thermoelectric, electrodes - solar, defects, charge transport, materials and chemistry by design, optics, synthesis (novel materials), synthesis (self-assembly)
title Influence of Mn dopants on InAs/GaAs quantum dot electronic states
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-02-01T13%3A26%3A55IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-osti&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Influence%20of%20Mn%20dopants%20on%20InAs/GaAs%20quantum%20dot%20electronic%20states&rft.jtitle=Applied%20physics%20letters&rft.au=Dasika,%20V.%20D.&rft.aucorp=Energy%20Frontier%20Research%20Centers%20(EFRC)%20(United%20States).%20Center%20for%20Solar%20and%20Thermal%20Energy%20Conversion%20(CSTEC)&rft.date=2011-04-04&rft.volume=98&rft.issue=14&rft.issn=0003-6951&rft.eissn=1077-3118&rft_id=info:doi/10.1063/1.3567510&rft_dat=%3Costi%3E1380507%3C/osti%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true