Interplay of cavity thickness and metal absorption in thin-film InGaN photonic crystal light-emitting diodes

Interplay of cavity thickness and metal absorption in thin-film InGaN photonic crystal light-emitting diodes

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Veröffentlicht in:Applied physics letters 2010-08, Vol.97 (6)
Hauptverfasser: Rangel, Elizabeth, Matioli, Elison, Chen, Hung-Tse, Choi, Yong-Seok, Weisbuch, Claude, Speck, James S., Hu, Evelyn L.
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Sprache:eng
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solar (photovoltaic), solid state lighting, phonons, thermoelectric, bio-inspired, energy storage (including batteries and capacitors), electrodes - solar, defects, charge transport, materials and chemistry by design, optics, synthesis (novel materials), synthesis (self-assembly), synthesis (scalable processing)
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container_issue 6
container_start_page
container_title Applied physics letters
container_volume 97
creator Rangel, Elizabeth
Matioli, Elison
Chen, Hung-Tse
Choi, Yong-Seok
Weisbuch, Claude
Speck, James S.
Hu, Evelyn L.
description
doi_str_mv 10.1063/1.3480421
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source AIP Journals Complete; AIP Digital Archive; Alma/SFX Local Collection
subjects solar (photovoltaic), solid state lighting, phonons, thermoelectric, bio-inspired, energy storage (including batteries and capacitors), electrodes - solar, defects, charge transport, materials and chemistry by design, optics, synthesis (novel materials), synthesis (self-assembly), synthesis (scalable processing)
title Interplay of cavity thickness and metal absorption in thin-film InGaN photonic crystal light-emitting diodes
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