Enhancing the barrier height in oxide Schottky junctions using interface dipoles
We demonstrate a 0.37 eV increase in the n-type Schottky barrier height at the Pt/TiO2-terminated SrTiO3 (001) interface by insertion of an ultrathin insulator AgTaO3. While a conventional metal-insulator-semiconductor model predicts a reduction in the barrier height with insulator thickness, the ob...
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| Veröffentlicht in: | Applied physics letters 2017-08, Vol.111 (9) |
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| container_title | Applied physics letters |
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| creator | Tachikawa, Takashi Hwang, Harold Y. Hikita, Yasuyuki |
| description | We demonstrate a 0.37 eV increase in the n-type Schottky barrier height at the Pt/TiO2-terminated SrTiO3 (001) interface by insertion of an ultrathin insulator AgTaO3. While a conventional metal-insulator-semiconductor model predicts a reduction in the barrier height with insulator thickness, the observed increase originates from the two polar surface layers, (AgO)– and (TaO2)+ in AgTaO3 (001), forming an electrostatic dipole directed towards the metal, increasing the barrier height. Based on directly measured optical and dielectric properties of high quality AgTaO3 thin films, we determine the interface energy band diagram including the interface dipole. The capability to exploit the strong ionic charges of oxide surfaces to manipulate interface band alignments beyond bulk values greatly expands the design strategies for tailoring functional oxide interfaces. Up to now, the use of an ultrathin LaAlO3 layer could only decrease the barrier height, but now bidirectional control is possible. |
| doi_str_mv | 10.1063/1.4991691 |
| format | Article |
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While a conventional metal-insulator-semiconductor model predicts a reduction in the barrier height with insulator thickness, the observed increase originates from the two polar surface layers, (AgO)– and (TaO2)+ in AgTaO3 (001), forming an electrostatic dipole directed towards the metal, increasing the barrier height. Based on directly measured optical and dielectric properties of high quality AgTaO3 thin films, we determine the interface energy band diagram including the interface dipole. The capability to exploit the strong ionic charges of oxide surfaces to manipulate interface band alignments beyond bulk values greatly expands the design strategies for tailoring functional oxide interfaces. Up to now, the use of an ultrathin LaAlO3 layer could only decrease the barrier height, but now bidirectional control is possible.</description><identifier>ISSN: 0003-6951</identifier><identifier>EISSN: 1077-3118</identifier><identifier>DOI: 10.1063/1.4991691</identifier><identifier>CODEN: APPLAB</identifier><language>eng</language><publisher>Melville: American Institute of Physics</publisher><subject>Applied physics ; Barriers ; Dielectric properties ; Dipoles ; Insulators ; MIS (semiconductors) ; Optical properties ; Strontium titanates ; Surface layers ; Thin films ; Titanium dioxide</subject><ispartof>Applied physics letters, 2017-08, Vol.111 (9)</ispartof><rights>Author(s)</rights><rights>2017 Author(s). 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While a conventional metal-insulator-semiconductor model predicts a reduction in the barrier height with insulator thickness, the observed increase originates from the two polar surface layers, (AgO)– and (TaO2)+ in AgTaO3 (001), forming an electrostatic dipole directed towards the metal, increasing the barrier height. Based on directly measured optical and dielectric properties of high quality AgTaO3 thin films, we determine the interface energy band diagram including the interface dipole. The capability to exploit the strong ionic charges of oxide surfaces to manipulate interface band alignments beyond bulk values greatly expands the design strategies for tailoring functional oxide interfaces. Up to now, the use of an ultrathin LaAlO3 layer could only decrease the barrier height, but now bidirectional control is possible.</description><subject>Applied physics</subject><subject>Barriers</subject><subject>Dielectric properties</subject><subject>Dipoles</subject><subject>Insulators</subject><subject>MIS (semiconductors)</subject><subject>Optical properties</subject><subject>Strontium titanates</subject><subject>Surface layers</subject><subject>Thin films</subject><subject>Titanium dioxide</subject><issn>0003-6951</issn><issn>1077-3118</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2017</creationdate><recordtype>article</recordtype><recordid>eNqdkFtLwzAUgIMoOKcP_oOgTwqdSdMmzaPIvMBAQX0O6Wm6Zs6kJpm4f2_LBr77ci7wnQsfQueUzCjh7IbOCikpl_QATSgRImOUVodoQghhGZclPUYnMa6GtswZm6CXueu0A-uWOHUG1zoEawLujF12CVuH_Y9tDH6Fzqf0scWrjYNkvYt4E8ch65IJrQaDG9v7tYmn6KjV62jO9nmK3u_nb3eP2eL54enudpFBkZOUFSXVjdC1ZENBQJCS1LypeQ1EamhFOQSTS5HzumCaF1wQyRltAbQcEGBTdLHb62OyKoJNBjrwzhlIijIhSFUN0OUO6oP_2piY1Mpvghv-UjmlnFRk9DJFVzsKgo8xmFb1wX7qsFWUqNGqompvdWCvd-x4UY8m_gd_-_AHqr5p2S987IVI</recordid><startdate>20170828</startdate><enddate>20170828</enddate><creator>Tachikawa, Takashi</creator><creator>Hwang, Harold Y.</creator><creator>Hikita, Yasuyuki</creator><general>American Institute of Physics</general><scope>AAYXX</scope><scope>CITATION</scope><scope>8FD</scope><scope>H8D</scope><scope>L7M</scope><scope>OTOTI</scope></search><sort><creationdate>20170828</creationdate><title>Enhancing the barrier height in oxide Schottky junctions using interface dipoles</title><author>Tachikawa, Takashi ; Hwang, Harold Y. ; Hikita, Yasuyuki</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c420t-451ad7ab9351a0c7050b6db6bc09acf75acfe29726b43a646709631fcca9c09c3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2017</creationdate><topic>Applied physics</topic><topic>Barriers</topic><topic>Dielectric properties</topic><topic>Dipoles</topic><topic>Insulators</topic><topic>MIS (semiconductors)</topic><topic>Optical properties</topic><topic>Strontium titanates</topic><topic>Surface layers</topic><topic>Thin films</topic><topic>Titanium dioxide</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Tachikawa, Takashi</creatorcontrib><creatorcontrib>Hwang, Harold Y.</creatorcontrib><creatorcontrib>Hikita, Yasuyuki</creatorcontrib><collection>CrossRef</collection><collection>Technology Research Database</collection><collection>Aerospace Database</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>OSTI.GOV</collection><jtitle>Applied physics letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Tachikawa, Takashi</au><au>Hwang, Harold Y.</au><au>Hikita, Yasuyuki</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Enhancing the barrier height in oxide Schottky junctions using interface dipoles</atitle><jtitle>Applied physics letters</jtitle><date>2017-08-28</date><risdate>2017</risdate><volume>111</volume><issue>9</issue><issn>0003-6951</issn><eissn>1077-3118</eissn><coden>APPLAB</coden><abstract>We demonstrate a 0.37 eV increase in the n-type Schottky barrier height at the Pt/TiO2-terminated SrTiO3 (001) interface by insertion of an ultrathin insulator AgTaO3. While a conventional metal-insulator-semiconductor model predicts a reduction in the barrier height with insulator thickness, the observed increase originates from the two polar surface layers, (AgO)– and (TaO2)+ in AgTaO3 (001), forming an electrostatic dipole directed towards the metal, increasing the barrier height. Based on directly measured optical and dielectric properties of high quality AgTaO3 thin films, we determine the interface energy band diagram including the interface dipole. The capability to exploit the strong ionic charges of oxide surfaces to manipulate interface band alignments beyond bulk values greatly expands the design strategies for tailoring functional oxide interfaces. Up to now, the use of an ultrathin LaAlO3 layer could only decrease the barrier height, but now bidirectional control is possible.</abstract><cop>Melville</cop><pub>American Institute of Physics</pub><doi>10.1063/1.4991691</doi><tpages>4</tpages></addata></record> |
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| language | eng |
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| source | AIP Journals Complete; Alma/SFX Local Collection |
| subjects | Applied physics Barriers Dielectric properties Dipoles Insulators MIS (semiconductors) Optical properties Strontium titanates Surface layers Thin films Titanium dioxide |
| title | Enhancing the barrier height in oxide Schottky junctions using interface dipoles |
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