High thermoelectric performance of n-type PbTe 1-y S y due to deep lying states induced by indium doping and spinodal decomposition

Good thermoelectric materials should have high engineering figure-of-merit (ZT)eng, not peak ZT, to achieve high conversion efficiency. In this work, we achieved a good (ZT)eng by optimizing the carrier concentration to improve the room temperature ZT using deep lying dopant, indium, in PbTe 1-y S y...

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