Reducing interface recombination for Cu(In,Ga)Se2 by atomic layer deposited buffer layers
Partial CuInGaSe2 (CIGS) solar cell stacks with different atomic layer deposited buffer layers and pretreatments were analyzed by photoluminescence (PL) and capacitance voltage (CV) measurements to investigate the buffer layer/CIGS interface. Atomic layer deposited ZnS, ZnO, and SnOx buffer layers w...
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Veröffentlicht in: | Applied physics letters 2015-07, Vol.107 (3) |
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creator | Hultqvist, Adam Li, Jian V. Kuciauskas, Darius Dippo, Patricia Contreras, Miguel A. Levi, Dean H. Bent, Stacey F. |
description | Partial CuInGaSe2 (CIGS) solar cell stacks with different atomic layer deposited buffer layers and pretreatments were analyzed by photoluminescence (PL) and capacitance voltage (CV) measurements to investigate the buffer layer/CIGS interface. Atomic layer deposited ZnS, ZnO, and SnOx buffer layers were compared with chemical bath deposited CdS buffer layers. Band bending, charge density, and interface state density were extracted from the CV measurement using an analysis technique new to CIGS. The surface recombination velocity calculated from the density of interface traps for a ZnS/CIGS stack shows a remarkably low value of 810 cm/s, approaching the range of single crystalline II–VI systems. Both the PL spectra and its lifetime depend on the buffer layer; thus, these measurements are not only sensitive to the absorber but also to the absorber/buffer layer system. Pretreatment of the CIGS prior to the buffer layer deposition plays a significant role on the electrical properties for the same buffer layer/CIGS stack, further illuminating the importance of good interface formation. Finally, ZnS is found to be the best performing buffer layer in this study, especially if the CIGS surface is pretreated with potassium cyanide. |
doi_str_mv | 10.1063/1.4927096 |
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Center on Nanostructuring for Efficient Energy Conversion (CNEEC)</creatorcontrib><description>Partial CuInGaSe2 (CIGS) solar cell stacks with different atomic layer deposited buffer layers and pretreatments were analyzed by photoluminescence (PL) and capacitance voltage (CV) measurements to investigate the buffer layer/CIGS interface. Atomic layer deposited ZnS, ZnO, and SnOx buffer layers were compared with chemical bath deposited CdS buffer layers. Band bending, charge density, and interface state density were extracted from the CV measurement using an analysis technique new to CIGS. The surface recombination velocity calculated from the density of interface traps for a ZnS/CIGS stack shows a remarkably low value of 810 cm/s, approaching the range of single crystalline II–VI systems. Both the PL spectra and its lifetime depend on the buffer layer; thus, these measurements are not only sensitive to the absorber but also to the absorber/buffer layer system. Pretreatment of the CIGS prior to the buffer layer deposition plays a significant role on the electrical properties for the same buffer layer/CIGS stack, further illuminating the importance of good interface formation. Finally, ZnS is found to be the best performing buffer layer in this study, especially if the CIGS surface is pretreated with potassium cyanide.</description><identifier>ISSN: 0003-6951</identifier><identifier>EISSN: 1077-3118</identifier><identifier>DOI: 10.1063/1.4927096</identifier><language>eng</language><publisher>United States: American Institute of Physics (AIP)</publisher><subject>ENGINEERING ; INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CHEMISTRY ; SOLAR ENERGY</subject><ispartof>Applied physics letters, 2015-07, Vol.107 (3)</ispartof><lds50>peer_reviewed</lds50><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c2726-85de628eaef64c6fa33ed296b4af90e2db6d8e00149cb97359c78ec5cbc764613</citedby><cites>FETCH-LOGICAL-c2726-85de628eaef64c6fa33ed296b4af90e2db6d8e00149cb97359c78ec5cbc764613</cites><orcidid>0000-0001-8091-5718 ; 0000000180915718</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>230,314,778,782,883,27907,27908</link.rule.ids><backlink>$$Uhttps://www.osti.gov/servlets/purl/1370025$$D View this record in Osti.gov$$Hfree_for_read</backlink></links><search><creatorcontrib>Hultqvist, Adam</creatorcontrib><creatorcontrib>Li, Jian V.</creatorcontrib><creatorcontrib>Kuciauskas, Darius</creatorcontrib><creatorcontrib>Dippo, Patricia</creatorcontrib><creatorcontrib>Contreras, Miguel A.</creatorcontrib><creatorcontrib>Levi, Dean H.</creatorcontrib><creatorcontrib>Bent, Stacey F.</creatorcontrib><creatorcontrib>Energy Frontier Research Centers (EFRC) (United States). Center on Nanostructuring for Efficient Energy Conversion (CNEEC)</creatorcontrib><title>Reducing interface recombination for Cu(In,Ga)Se2 by atomic layer deposited buffer layers</title><title>Applied physics letters</title><description>Partial CuInGaSe2 (CIGS) solar cell stacks with different atomic layer deposited buffer layers and pretreatments were analyzed by photoluminescence (PL) and capacitance voltage (CV) measurements to investigate the buffer layer/CIGS interface. Atomic layer deposited ZnS, ZnO, and SnOx buffer layers were compared with chemical bath deposited CdS buffer layers. Band bending, charge density, and interface state density were extracted from the CV measurement using an analysis technique new to CIGS. The surface recombination velocity calculated from the density of interface traps for a ZnS/CIGS stack shows a remarkably low value of 810 cm/s, approaching the range of single crystalline II–VI systems. Both the PL spectra and its lifetime depend on the buffer layer; thus, these measurements are not only sensitive to the absorber but also to the absorber/buffer layer system. Pretreatment of the CIGS prior to the buffer layer deposition plays a significant role on the electrical properties for the same buffer layer/CIGS stack, further illuminating the importance of good interface formation. Finally, ZnS is found to be the best performing buffer layer in this study, especially if the CIGS surface is pretreated with potassium cyanide.</description><subject>ENGINEERING</subject><subject>INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CHEMISTRY</subject><subject>SOLAR ENERGY</subject><issn>0003-6951</issn><issn>1077-3118</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2015</creationdate><recordtype>article</recordtype><recordid>eNotkE1LAzEYhIMoWKsH_0HwZMGt-dhNNkcpWgsFwY-DpyX77huNtElJtof99662p2GGh2EYQq45m3Om5D2fl0ZoZtQJmXCmdSE5r0_JhDEmC2Uqfk4ucv4ZbSWknJDPV-z24MMX9aHH5CwgTQhx2_pgex8DdTHRxf52Fe6WdvaGgrYDtX3ceqAbO2CiHe5i9j12tN07Nwb_cb4kZ85uMl4ddUo-nh7fF8_F-mW5WjysCxBaqKKuOlSiRotOlaCclRI7YVRbWmcYiq5VXY2M8dJAa7SsDOgaoYIWtCoVl1Nyc-iNufdNhnEJfEMMAaFvuNSMiWqEZgcIUsw5oWt2yW9tGhrOmr_jGt4cj5O_6mpfmA</recordid><startdate>20150720</startdate><enddate>20150720</enddate><creator>Hultqvist, Adam</creator><creator>Li, Jian V.</creator><creator>Kuciauskas, Darius</creator><creator>Dippo, Patricia</creator><creator>Contreras, Miguel A.</creator><creator>Levi, Dean H.</creator><creator>Bent, Stacey F.</creator><general>American Institute of Physics (AIP)</general><scope>AAYXX</scope><scope>CITATION</scope><scope>OIOZB</scope><scope>OTOTI</scope><orcidid>https://orcid.org/0000-0001-8091-5718</orcidid><orcidid>https://orcid.org/0000000180915718</orcidid></search><sort><creationdate>20150720</creationdate><title>Reducing interface recombination for Cu(In,Ga)Se2 by atomic layer deposited buffer layers</title><author>Hultqvist, Adam ; Li, Jian V. ; Kuciauskas, Darius ; Dippo, Patricia ; Contreras, Miguel A. ; Levi, Dean H. ; Bent, Stacey F.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c2726-85de628eaef64c6fa33ed296b4af90e2db6d8e00149cb97359c78ec5cbc764613</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2015</creationdate><topic>ENGINEERING</topic><topic>INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CHEMISTRY</topic><topic>SOLAR ENERGY</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Hultqvist, Adam</creatorcontrib><creatorcontrib>Li, Jian V.</creatorcontrib><creatorcontrib>Kuciauskas, Darius</creatorcontrib><creatorcontrib>Dippo, Patricia</creatorcontrib><creatorcontrib>Contreras, Miguel A.</creatorcontrib><creatorcontrib>Levi, Dean H.</creatorcontrib><creatorcontrib>Bent, Stacey F.</creatorcontrib><creatorcontrib>Energy Frontier Research Centers (EFRC) (United States). 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The surface recombination velocity calculated from the density of interface traps for a ZnS/CIGS stack shows a remarkably low value of 810 cm/s, approaching the range of single crystalline II–VI systems. Both the PL spectra and its lifetime depend on the buffer layer; thus, these measurements are not only sensitive to the absorber but also to the absorber/buffer layer system. Pretreatment of the CIGS prior to the buffer layer deposition plays a significant role on the electrical properties for the same buffer layer/CIGS stack, further illuminating the importance of good interface formation. Finally, ZnS is found to be the best performing buffer layer in this study, especially if the CIGS surface is pretreated with potassium cyanide.</abstract><cop>United States</cop><pub>American Institute of Physics (AIP)</pub><doi>10.1063/1.4927096</doi><orcidid>https://orcid.org/0000-0001-8091-5718</orcidid><orcidid>https://orcid.org/0000000180915718</orcidid><oa>free_for_read</oa></addata></record> |
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subjects | ENGINEERING INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CHEMISTRY SOLAR ENERGY |
title | Reducing interface recombination for Cu(In,Ga)Se2 by atomic layer deposited buffer layers |
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