Quasi-two-dimensional electron gas at the interface of γ-Al2O3/SrTiO3 heterostructures grown by atomic layer deposition

We report the formation of a quasi-two-dimensional electron gas (2-DEG) at the interface of γ-Al2O3/TiO2-terminated SrTiO3 (STO) grown by atomic layer deposition (ALD). The ALD growth of Al2O3 on STO(001) single crystal substrates was performed at temperatures in the range of 200–345 °C. Trimethylal...

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Veröffentlicht in:	Journal of applied physics 2015-09, Vol.118 (11)
Hauptverfasser:	Ngo, Thong Q., Goble, Nicholas J., Posadas, Agham, Kormondy, Kristy J., Lu, Sirong, McDaniel, Martin D., Jordan-Sweet, Jean, Smith, David J., Gao, Xuan P. A., Demkov, Alexander A., Ekerdt, John G.
Format:	Artikel
Sprache:	eng
Schlagworte:	Aluminum oxide Applied physics ATOMIC AND MOLECULAR PHYSICS Atomic layer deposition Atomic layer epitaxy Crystal structure Crystallinity Electron diffraction Electron gas Electrons Energy transmission Heterostructures Single crystals Strontium titanates Substrates Thickness Thin films Titanium Titanium dioxide Transition metal oxides Transitional aluminas Transmission electron microscopy Two-dimensional electron gas X-ray diffraction X-ray photoelectron spectroscopy
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