Spectroscopic ellipsometry and photoluminescence measurements of as-deposited and annealed silicon rich oxynitride films

As-deposited and annealed amorphous SiO x N y /H (0.17 ≤ x ≤ 0.96; 0.07 ≤ y ≤ 0.27) films were characterized by spectroscopic ellipsometry and room temperature photoluminescence measurements. The refractive index of as-deposited silicon oxynitride films could be successfully varied between SiO 2 and...

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Veröffentlicht in:	Thin solid films 2008-04, Vol.516 (12), p.4342-4350
Hauptverfasser:	Kohli, Sandeep, Theil, Jeremy A., McCurdy, Patrick R., Dippo, Patricia C., Ahrenkiel, Richard K., Rithner, Christopher D., Dorhout, Peter K.
Format:	Artikel
Sprache:	eng
Schlagworte:	Condensed matter: electronic structure, electrical, magnetic, and optical properties Condensed matter: structure, mechanical and thermal properties Exact sciences and technology MATERIALS SCIENCE Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation Optical properties of specific thin films Photo luminescence photoluminescence Physics Silicon rich oxynitride SOLAR ENERGY Spectroscopic ellipsometry Structure and morphology thickness Surfaces and interfaces thin films and whiskers (structure and nonelectronic properties) Thin film structure and morphology
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