Effects of Hydrogen on Acceptor Activation in Ternary Nitride Semiconductors

Effects of Hydrogen on Acceptor Activation in Ternary Nitride Semiconductors

Enhanced acceptor activation is achieved in the ternary nitride semiconductor ZnSnN2. Hydrogen passivation of acceptors during growth, coupled with post‐growth annealing to remove hydrogen, suppresses native donor formation and moves the Fermi energy away from the conduction band minimum. This techn...

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Veröffentlicht in:Advanced electronic materials 2017-03, Vol.3 (3), p.n/a
Hauptverfasser: Fioretti, Angela N., Stokes, Adam, Young, Matthew R., Gorman, Brian, Toberer, Eric S., Tamboli, Adele C., Zakutayev, Andriy
Format: Artikel
Sprache:eng
Schlagworte:
annealing
CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS
hydrogen
nitride
photovoltaics
semiconductor
SOLAR ENERGY
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Zusammenfassung:Enhanced acceptor activation is achieved in the ternary nitride semiconductor ZnSnN2. Hydrogen passivation of acceptors during growth, coupled with post‐growth annealing to remove hydrogen, suppresses native donor formation and moves the Fermi energy away from the conduction band minimum. This technique produces nondegenerate zinc tin nitride with 1016 cm−3 electron concentration.
ISSN:2199-160X
2199-160X
DOI:10.1002/aelm.201600544