Hall field-induced resistance oscillations in MgZnO/ZnO heterostructures
We report on nonlinear magnetotransport in a two-dimensional electron gas hosted in a MgZnO/ZnO heterostructure. Upon application of a direct current, we observe pronounced Hall field–induced resistance oscillations (HIRO), which are well known from experiments on high-mobility GaAs/AlGaAs quantum w...
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| Veröffentlicht in: | Physical review. B 2017-01, Vol.95 (4), Article 041411 |
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| container_title | Physical review. B |
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| creator | Shi, Q. Zudov, M. A. Falson, J. Kozuka, Y. Tsukazaki, A. Kawasaki, M. von Klitzing, K. Smet, J. |
| description | We report on nonlinear magnetotransport in a two-dimensional electron gas hosted in a MgZnO/ZnO heterostructure. Upon application of a direct current, we observe pronounced Hall field–induced resistance oscillations (HIRO), which are well known from experiments on high-mobility GaAs/AlGaAs quantum wells. The unique sensitivity of HIRO to the short-range component of the disorder potential allows us to unambiguously establish that the mobility of our MgZnO/ZnO heterostructure is limited by impurities residing within or near the two-dimensional (2D) channel. This demonstration that HIRO can be realized in a system with a much lower mobility, much higher density, and much larger effective mass than in previously studied systems highlights the remarkable universality of the phenomenon and its great promise for use in studies of a wide variety of emerging 2D materials. |
| doi_str_mv | 10.1103/PhysRevB.95.041411 |
| format | Article |
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A. ; Falson, J. ; Kozuka, Y. ; Tsukazaki, A. ; Kawasaki, M. ; von Klitzing, K. ; Smet, J.</creator><creatorcontrib>Shi, Q. ; Zudov, M. A. ; Falson, J. ; Kozuka, Y. ; Tsukazaki, A. ; Kawasaki, M. ; von Klitzing, K. ; Smet, J.</creatorcontrib><description>We report on nonlinear magnetotransport in a two-dimensional electron gas hosted in a MgZnO/ZnO heterostructure. Upon application of a direct current, we observe pronounced Hall field–induced resistance oscillations (HIRO), which are well known from experiments on high-mobility GaAs/AlGaAs quantum wells. The unique sensitivity of HIRO to the short-range component of the disorder potential allows us to unambiguously establish that the mobility of our MgZnO/ZnO heterostructure is limited by impurities residing within or near the two-dimensional (2D) channel. This demonstration that HIRO can be realized in a system with a much lower mobility, much higher density, and much larger effective mass than in previously studied systems highlights the remarkable universality of the phenomenon and its great promise for use in studies of a wide variety of emerging 2D materials.</description><identifier>ISSN: 2469-9950</identifier><identifier>EISSN: 2469-9969</identifier><identifier>DOI: 10.1103/PhysRevB.95.041411</identifier><language>eng</language><publisher>College Park: American Physical Society</publisher><subject>Direct current ; Electron gas ; Heterostructures ; Oscillations ; Quantum wells ; System effectiveness ; Zinc oxide</subject><ispartof>Physical review. 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| subjects | Direct current Electron gas Heterostructures Oscillations Quantum wells System effectiveness Zinc oxide |
| title | Hall field-induced resistance oscillations in MgZnO/ZnO heterostructures |
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