Mapping of Threading Screw Dislocations in 4H n-Type SiC Wafers
X-ray topography shows that selective KOH etching after CVD growth of n-type epilayers on highly N doped 4H SiC substrates can be used to reliably map pure and mixed Threading Screw Dislocations (TSD). The influence of the mapping grid density and the wafer position in the crystal on the average TSD...
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| Veröffentlicht in: | Materials Science Forum 2016-05, Vol.858 (5, 2016), p.376-379 |
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| container_issue | 5, 2016 |
| container_start_page | 376 |
| container_title | Materials Science Forum |
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| creator | Guo, Jian Qiu Ellison, Alexandre Yang, Yu Sörman, Erik Dudley, Michael Sundqvist, Björn Goue, Ouloide Raghothamachar, Balaji Magnusson, Björn |
| description | X-ray topography shows that selective KOH etching after CVD growth of n-type epilayers on highly N doped 4H SiC substrates can be used to reliably map pure and mixed Threading Screw Dislocations (TSD). The influence of the mapping grid density and the wafer position in the crystal on the average TSD density are investigated. A reliable mapping of TSD contributed to the development of 100mm SiC wafers with average TSD density down to 200 cm-2. |
| doi_str_mv | 10.4028/www.scientific.net/MSF.858.376 |
| format | Article |
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(ANL), Argonne, IL (United States). Advanced Photon Source (APS)</aucorp><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Mapping of Threading Screw Dislocations in 4H n-Type SiC Wafers</atitle><jtitle>Materials Science Forum</jtitle><date>2016-05-24</date><risdate>2016</risdate><volume>858</volume><issue>5, 2016</issue><spage>376</spage><epage>379</epage><pages>376-379</pages><issn>0255-5476</issn><issn>1662-9752</issn><eissn>1662-9752</eissn><isbn>3035710422</isbn><isbn>9783035710427</isbn><abstract>X-ray topography shows that selective KOH etching after CVD growth of n-type epilayers on highly N doped 4H SiC substrates can be used to reliably map pure and mixed Threading Screw Dislocations (TSD). The influence of the mapping grid density and the wafer position in the crystal on the average TSD density are investigated. 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| subjects | Crystals Density Etching Mapping Screw dislocations Silicon carbide Wafers X-ray topography |
| title | Mapping of Threading Screw Dislocations in 4H n-Type SiC Wafers |
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