Using Ray Tracing Simulations for Direct Determination of Burgers Vectors of Threading Mixed Dislocations in 4H-SiC c-Plane Wafers Grown by PVT Method

The presence of threading mixed dislocations (TMDs) (with both edge and screw component) in 4H-SiC crystals grown by PVT method has been reported both from axial slices (wafers cut parallel to the growth axis) and commercial offcut wafers (cut almost perpendicular to the growth axis). In this paper,...

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Veröffentlicht in:Materials Science Forum 2016-05, Vol.858 (5, 2016), p.15-18
Hauptverfasser: Raghothamachar, Balaji, Dudley, Michael, Goue, Ouloide, Yang, Yu, Guo, Jian Qiu, Wu, Fang Zhen, Sumakeris, Joseph J., Leonard, R.T.
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Sprache:eng
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