Effect of surface passivation on dopant distribution in Si quantum dots: The case of B and P doping

Despite many efforts, the doping behavior in Si quantum dots (QDs) is still not well understood. Theoretical work shows that boron as an acceptor prefers to stay near the surface and phosphorous as a donor may stay close to the center in a perfectly hydrogen passivated QD. However, experiment studie...

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Veröffentlicht in:	Applied physics letters 2011-04, Vol.98 (17), p.173103-173103-3
Hauptverfasser:	Ma, Jie, Wei, Su-Huai, Neale, Nathan R., Nozik, Arthur J.
Format:	Artikel
Sprache:	eng
Schlagworte:	NANOSCIENCE AND NANOTECHNOLOGY quantum dots SOLAR ENERGY surface passivation
Online-Zugang:	Volltext
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