Parallel Stitching of 2D Materials

Diverse parallel stitched 2D heterostructures, including metal–semiconductor, semiconductor–semiconductor, and insulator–semiconductor, are synthesized directly through selective “sowing” of aromatic molecules as the seeds in the chemical vapor deposition (CVD) method. The methodology enables the la...

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Veröffentlicht in:Advanced materials (Weinheim) 2016-03, Vol.28 (12), p.2322-2329
Hauptverfasser: Ling, Xi, Lin, Yuxuan, Ma, Qiong, Wang, Ziqiang, Song, Yi, Yu, Lili, Huang, Shengxi, Fang, Wenjing, Zhang, Xu, Hsu, Allen L., Bie, Yaqing, Lee, Yi-Hsien, Zhu, Yimei, Wu, Lijun, Li, Ju, Jarillo-Herrero, Pablo, Dresselhaus, Mildred, Palacios, Tomás, Kong, Jing
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container_end_page 2329
container_issue 12
container_start_page 2322
container_title Advanced materials (Weinheim)
container_volume 28
creator Ling, Xi
Lin, Yuxuan
Ma, Qiong
Wang, Ziqiang
Song, Yi
Yu, Lili
Huang, Shengxi
Fang, Wenjing
Zhang, Xu
Hsu, Allen L.
Bie, Yaqing
Lee, Yi-Hsien
Zhu, Yimei
Wu, Lijun
Li, Ju
Jarillo-Herrero, Pablo
Dresselhaus, Mildred
Palacios, Tomás
Kong, Jing
description Diverse parallel stitched 2D heterostructures, including metal–semiconductor, semiconductor–semiconductor, and insulator–semiconductor, are synthesized directly through selective “sowing” of aromatic molecules as the seeds in the chemical vapor deposition (CVD) method. The methodology enables the large‐scale fabrication of lateral heterostructures, which offers tremendous potential for its application in integrated circuits.
doi_str_mv 10.1002/adma.201505070
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source Wiley Online Library Journals Frontfile Complete
subjects Chemical vapor deposition
CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY
heterostructure
Heterostructures
Integrated circuits
intergrated circuits
Materials selection
Methodology
MoS2
Seeds
Stitching
synthesis
Two dimensional
two-dimensional materials
title Parallel Stitching of 2D Materials
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