Record Surface State Mobility and Quantum Hall Effect in Topological Insulator Thin Films via Interface Engineering

Material defects remain as the main bottleneck to the progress of topological insulators (TIs). In particular, efforts to achieve thin TI samples with dominant surface transport have always led to increased defects and degraded mobilities, thus making it difficult to probe the quantum regime of the...

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Veröffentlicht in:	Nano letters 2015-12, Vol.15 (12), p.8245-8249
Hauptverfasser:	Koirala, Nikesh, Brahlek, Matthew, Salehi, Maryam, Wu, Liang, Dai, Jixia, Waugh, Justin, Nummy, Thomas, Han, Myung-Geun, Moon, Jisoo, Zhu, Yimei, Dessau, Daniel, Wu, Weida, Armitage, N. Peter, Oh, Seongshik
Format:	Artikel
Sprache:	eng
Schlagworte:	CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY heterostructure molecular beam epitaxy quantum Hall effect thin films topological insulator
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