Cryogenic preamplification of a single-electron-transistor using a silicon-germanium heterojunction-bipolar-transistor
We examine a silicon-germanium heterojunction bipolar transistor (HBT) for cryogenic pre-amplification of a single electron transistor (SET). The SET current modulates the base current of the HBT directly. The HBT-SET circuit is immersed in liquid helium, and its frequency response from low frequenc...
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| Veröffentlicht in: | Applied physics letters 2015-05, Vol.106 (20) |
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| container_title | Applied physics letters |
| container_volume | 106 |
| creator | Curry, M. J. England, T. D. Bishop, N. C. Ten-Eyck, G. Wendt, J. R. Pluym, T. Lilly, M. P. Carr, S. M. Carroll, M. S. |
| description | We examine a silicon-germanium heterojunction bipolar transistor (HBT) for cryogenic pre-amplification of a single electron transistor (SET). The SET current modulates the base current of the HBT directly. The HBT-SET circuit is immersed in liquid helium, and its frequency response from low frequency to several MHz is measured. The current gain and the noise spectrum with the HBT result in a signal-to-noise-ratio (SNR) that is a factor of 10–100 larger than without the HBT at lower frequencies. The transition frequency defined by SNR = 1 has been extended by as much as a factor of 10 compared to without the HBT amplification. The power dissipated by the HBT cryogenic pre-amplifier is approximately 5 nW to 5 μW for the investigated range of operation. The circuit is also operated in a single electron charge read-out configuration in the time-domain as a proof-of-principle demonstration of the amplification approach for single spin read-out. |
| doi_str_mv | 10.1063/1.4921308 |
| format | Article |
| fullrecord | <record><control><sourceid>proquest_osti_</sourceid><recordid>TN_cdi_osti_scitechconnect_1235274</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>2124759990</sourcerecordid><originalsourceid>FETCH-LOGICAL-c385t-e77fc80d948cc29be38dc074b355ce9a2b0eb8cbb1bb8912f724062fa972d9e13</originalsourceid><addsrcrecordid>eNpNkEtLAzEUhYMoWKsL_8GgKxepecw0yVKKLyi40XVI0jttyjQZk4zQf-_UduHqcjnfPZx7ELqlZEbJnD_SWa0Y5USeoQklQmBOqTxHE0IIx3PV0Et0lfN2XBvG-QT9LNI-riF4V_UJzK7vfOudKT6GKraVqbIP6w4wdOBKigGXZEL2ucRUDQftD-m8G6U1pJ0JfthVGyiQ4nYI7mCEre9jZ9K_22t00Zouw81pTtHXy_Pn4g0vP17fF09L7LhsCgYhWifJStXSOaYscLlyRNSWN40DZZglYKWzllorFWWtYDWZs9YowVYKKJ-iu6NvzMXr7HwBtxmzhvEbTRlvmKhH6P4I9Sl-D5CL3sYhhTGXZpTVolFKkZF6OFIuxZwTtLpPfmfSXlOiD91rqk_d818PGHkH</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>2124759990</pqid></control><display><type>article</type><title>Cryogenic preamplification of a single-electron-transistor using a silicon-germanium heterojunction-bipolar-transistor</title><source>AIP Journals Complete</source><source>Alma/SFX Local Collection</source><creator>Curry, M. J. ; England, T. D. ; Bishop, N. C. ; Ten-Eyck, G. ; Wendt, J. R. ; Pluym, T. ; Lilly, M. P. ; Carr, S. M. ; Carroll, M. S.</creator><creatorcontrib>Curry, M. J. ; England, T. D. ; Bishop, N. C. ; Ten-Eyck, G. ; Wendt, J. R. ; Pluym, T. ; Lilly, M. P. ; Carr, S. M. ; Carroll, M. S. ; Sandia National Lab. (SNL-NM), Albuquerque, NM (United States) ; Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States</creatorcontrib><description>We examine a silicon-germanium heterojunction bipolar transistor (HBT) for cryogenic pre-amplification of a single electron transistor (SET). The SET current modulates the base current of the HBT directly. The HBT-SET circuit is immersed in liquid helium, and its frequency response from low frequency to several MHz is measured. The current gain and the noise spectrum with the HBT result in a signal-to-noise-ratio (SNR) that is a factor of 10–100 larger than without the HBT at lower frequencies. The transition frequency defined by SNR = 1 has been extended by as much as a factor of 10 compared to without the HBT amplification. The power dissipated by the HBT cryogenic pre-amplifier is approximately 5 nW to 5 μW for the investigated range of operation. The circuit is also operated in a single electron charge read-out configuration in the time-domain as a proof-of-principle demonstration of the amplification approach for single spin read-out.</description><identifier>ISSN: 0003-6951</identifier><identifier>EISSN: 1077-3118</identifier><identifier>DOI: 10.1063/1.4921308</identifier><language>eng</language><publisher>Melville: American Institute of Physics</publisher><subject>Amplification ; Applied physics ; Circuits ; CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY ; Dissipation factor ; Electrons ; Frequency response ; Heterojunction bipolar transistors ; INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY ; Liquid helium ; Semiconductor devices ; Silicon ; Single-electron transistors ; Transistors</subject><ispartof>Applied physics letters, 2015-05, Vol.106 (20)</ispartof><rights>2015 AIP Publishing LLC.</rights><lds50>peer_reviewed</lds50><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c385t-e77fc80d948cc29be38dc074b355ce9a2b0eb8cbb1bb8912f724062fa972d9e13</citedby><cites>FETCH-LOGICAL-c385t-e77fc80d948cc29be38dc074b355ce9a2b0eb8cbb1bb8912f724062fa972d9e13</cites><orcidid>0000-0001-6756-1740</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>230,314,776,780,881,27901,27902</link.rule.ids><backlink>$$Uhttps://www.osti.gov/servlets/purl/1235274$$D View this record in Osti.gov$$Hfree_for_read</backlink></links><search><creatorcontrib>Curry, M. J.</creatorcontrib><creatorcontrib>England, T. D.</creatorcontrib><creatorcontrib>Bishop, N. C.</creatorcontrib><creatorcontrib>Ten-Eyck, G.</creatorcontrib><creatorcontrib>Wendt, J. R.</creatorcontrib><creatorcontrib>Pluym, T.</creatorcontrib><creatorcontrib>Lilly, M. P.</creatorcontrib><creatorcontrib>Carr, S. M.</creatorcontrib><creatorcontrib>Carroll, M. S.</creatorcontrib><creatorcontrib>Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)</creatorcontrib><creatorcontrib>Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States</creatorcontrib><title>Cryogenic preamplification of a single-electron-transistor using a silicon-germanium heterojunction-bipolar-transistor</title><title>Applied physics letters</title><description>We examine a silicon-germanium heterojunction bipolar transistor (HBT) for cryogenic pre-amplification of a single electron transistor (SET). The SET current modulates the base current of the HBT directly. The HBT-SET circuit is immersed in liquid helium, and its frequency response from low frequency to several MHz is measured. The current gain and the noise spectrum with the HBT result in a signal-to-noise-ratio (SNR) that is a factor of 10–100 larger than without the HBT at lower frequencies. The transition frequency defined by SNR = 1 has been extended by as much as a factor of 10 compared to without the HBT amplification. The power dissipated by the HBT cryogenic pre-amplifier is approximately 5 nW to 5 μW for the investigated range of operation. The circuit is also operated in a single electron charge read-out configuration in the time-domain as a proof-of-principle demonstration of the amplification approach for single spin read-out.</description><subject>Amplification</subject><subject>Applied physics</subject><subject>Circuits</subject><subject>CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY</subject><subject>Dissipation factor</subject><subject>Electrons</subject><subject>Frequency response</subject><subject>Heterojunction bipolar transistors</subject><subject>INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY</subject><subject>Liquid helium</subject><subject>Semiconductor devices</subject><subject>Silicon</subject><subject>Single-electron transistors</subject><subject>Transistors</subject><issn>0003-6951</issn><issn>1077-3118</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2015</creationdate><recordtype>article</recordtype><recordid>eNpNkEtLAzEUhYMoWKsL_8GgKxepecw0yVKKLyi40XVI0jttyjQZk4zQf-_UduHqcjnfPZx7ELqlZEbJnD_SWa0Y5USeoQklQmBOqTxHE0IIx3PV0Et0lfN2XBvG-QT9LNI-riF4V_UJzK7vfOudKT6GKraVqbIP6w4wdOBKigGXZEL2ucRUDQftD-m8G6U1pJ0JfthVGyiQ4nYI7mCEre9jZ9K_22t00Zouw81pTtHXy_Pn4g0vP17fF09L7LhsCgYhWifJStXSOaYscLlyRNSWN40DZZglYKWzllorFWWtYDWZs9YowVYKKJ-iu6NvzMXr7HwBtxmzhvEbTRlvmKhH6P4I9Sl-D5CL3sYhhTGXZpTVolFKkZF6OFIuxZwTtLpPfmfSXlOiD91rqk_d818PGHkH</recordid><startdate>20150518</startdate><enddate>20150518</enddate><creator>Curry, M. J.</creator><creator>England, T. D.</creator><creator>Bishop, N. C.</creator><creator>Ten-Eyck, G.</creator><creator>Wendt, J. R.</creator><creator>Pluym, T.</creator><creator>Lilly, M. P.</creator><creator>Carr, S. M.</creator><creator>Carroll, M. S.</creator><general>American Institute of Physics</general><general>American Institute of Physics (AIP)</general><scope>AAYXX</scope><scope>CITATION</scope><scope>8FD</scope><scope>H8D</scope><scope>L7M</scope><scope>OIOZB</scope><scope>OTOTI</scope><orcidid>https://orcid.org/0000-0001-6756-1740</orcidid></search><sort><creationdate>20150518</creationdate><title>Cryogenic preamplification of a single-electron-transistor using a silicon-germanium heterojunction-bipolar-transistor</title><author>Curry, M. J. ; England, T. D. ; Bishop, N. C. ; Ten-Eyck, G. ; Wendt, J. R. ; Pluym, T. ; Lilly, M. P. ; Carr, S. M. ; Carroll, M. S.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c385t-e77fc80d948cc29be38dc074b355ce9a2b0eb8cbb1bb8912f724062fa972d9e13</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2015</creationdate><topic>Amplification</topic><topic>Applied physics</topic><topic>Circuits</topic><topic>CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY</topic><topic>Dissipation factor</topic><topic>Electrons</topic><topic>Frequency response</topic><topic>Heterojunction bipolar transistors</topic><topic>INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY</topic><topic>Liquid helium</topic><topic>Semiconductor devices</topic><topic>Silicon</topic><topic>Single-electron transistors</topic><topic>Transistors</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Curry, M. J.</creatorcontrib><creatorcontrib>England, T. D.</creatorcontrib><creatorcontrib>Bishop, N. C.</creatorcontrib><creatorcontrib>Ten-Eyck, G.</creatorcontrib><creatorcontrib>Wendt, J. R.</creatorcontrib><creatorcontrib>Pluym, T.</creatorcontrib><creatorcontrib>Lilly, M. P.</creatorcontrib><creatorcontrib>Carr, S. M.</creatorcontrib><creatorcontrib>Carroll, M. S.</creatorcontrib><creatorcontrib>Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)</creatorcontrib><creatorcontrib>Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States</creatorcontrib><collection>CrossRef</collection><collection>Technology Research Database</collection><collection>Aerospace Database</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>OSTI.GOV - Hybrid</collection><collection>OSTI.GOV</collection><jtitle>Applied physics letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Curry, M. J.</au><au>England, T. D.</au><au>Bishop, N. C.</au><au>Ten-Eyck, G.</au><au>Wendt, J. R.</au><au>Pluym, T.</au><au>Lilly, M. P.</au><au>Carr, S. M.</au><au>Carroll, M. S.</au><aucorp>Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)</aucorp><aucorp>Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States</aucorp><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Cryogenic preamplification of a single-electron-transistor using a silicon-germanium heterojunction-bipolar-transistor</atitle><jtitle>Applied physics letters</jtitle><date>2015-05-18</date><risdate>2015</risdate><volume>106</volume><issue>20</issue><issn>0003-6951</issn><eissn>1077-3118</eissn><abstract>We examine a silicon-germanium heterojunction bipolar transistor (HBT) for cryogenic pre-amplification of a single electron transistor (SET). The SET current modulates the base current of the HBT directly. The HBT-SET circuit is immersed in liquid helium, and its frequency response from low frequency to several MHz is measured. The current gain and the noise spectrum with the HBT result in a signal-to-noise-ratio (SNR) that is a factor of 10–100 larger than without the HBT at lower frequencies. The transition frequency defined by SNR = 1 has been extended by as much as a factor of 10 compared to without the HBT amplification. The power dissipated by the HBT cryogenic pre-amplifier is approximately 5 nW to 5 μW for the investigated range of operation. The circuit is also operated in a single electron charge read-out configuration in the time-domain as a proof-of-principle demonstration of the amplification approach for single spin read-out.</abstract><cop>Melville</cop><pub>American Institute of Physics</pub><doi>10.1063/1.4921308</doi><orcidid>https://orcid.org/0000-0001-6756-1740</orcidid><oa>free_for_read</oa></addata></record> |
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| source | AIP Journals Complete; Alma/SFX Local Collection |
| subjects | Amplification Applied physics Circuits CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY Dissipation factor Electrons Frequency response Heterojunction bipolar transistors INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY Liquid helium Semiconductor devices Silicon Single-electron transistors Transistors |
| title | Cryogenic preamplification of a single-electron-transistor using a silicon-germanium heterojunction-bipolar-transistor |
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