Interband tunneling for hole injection in III-nitride ultraviolet emitters
Low p-type conductivity and high contact resistance remain a critical problem in wide band gap AlGaN-based ultraviolet light emitters due to the high acceptor ionization energy. In this work, interband tunneling is demonstrated for non-equilibrium injection of holes through the use of ultra-thin pol...
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| Veröffentlicht in: | Applied physics letters 2015-04, Vol.106 (14) |
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| container_title | Applied physics letters |
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| creator | Zhang, Yuewei Krishnamoorthy, Sriram Johnson, Jared M. Akyol, Fatih Allerman, Andrew Moseley, Michael W. Armstrong, Andrew Hwang, Jinwoo Rajan, Siddharth |
| description | Low p-type conductivity and high contact resistance remain a critical problem in wide band gap AlGaN-based ultraviolet light emitters due to the high acceptor ionization energy. In this work, interband tunneling is demonstrated for non-equilibrium injection of holes through the use of ultra-thin polarization-engineered layers that enhance tunneling probability by several orders of magnitude over a PN homojunction. Al0.3Ga0.7N interband tunnel junctions with a low resistance of 5.6 × 10−4 Ω cm2 were obtained and integrated on ultraviolet light emitting diodes. Tunnel injection of holes was used to realize GaN-free ultraviolet light emitters with bottom and top n-type Al0.3Ga0.7N contacts. At an emission wavelength of 327 nm, stable output power of 6 W/cm2 at a current density of 120 A/cm2 with a forward voltage of 5.9 V was achieved. This demonstration of efficient interband tunneling could enable device designs for higher efficiency ultraviolet emitters. |
| doi_str_mv | 10.1063/1.4917529 |
| format | Article |
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(SNL-NM), Albuquerque, NM (United States)</creatorcontrib><description>Low p-type conductivity and high contact resistance remain a critical problem in wide band gap AlGaN-based ultraviolet light emitters due to the high acceptor ionization energy. In this work, interband tunneling is demonstrated for non-equilibrium injection of holes through the use of ultra-thin polarization-engineered layers that enhance tunneling probability by several orders of magnitude over a PN homojunction. Al0.3Ga0.7N interband tunnel junctions with a low resistance of 5.6 × 10−4 Ω cm2 were obtained and integrated on ultraviolet light emitting diodes. Tunnel injection of holes was used to realize GaN-free ultraviolet light emitters with bottom and top n-type Al0.3Ga0.7N contacts. At an emission wavelength of 327 nm, stable output power of 6 W/cm2 at a current density of 120 A/cm2 with a forward voltage of 5.9 V was achieved. This demonstration of efficient interband tunneling could enable device designs for higher efficiency ultraviolet emitters.</description><identifier>ISSN: 0003-6951</identifier><identifier>EISSN: 1077-3118</identifier><identifier>DOI: 10.1063/1.4917529</identifier><language>eng</language><publisher>Melville: American Institute of Physics</publisher><subject>Aluminum gallium nitrides ; Applied physics ; Contact resistance ; Emitters ; Gallium nitrides ; Homojunctions ; INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY ; Ionization ; Low resistance ; Organic light emitting diodes ; Thin films ; Tunnel junctions ; Ultraviolet radiation</subject><ispartof>Applied physics letters, 2015-04, Vol.106 (14)</ispartof><rights>2015 AIP Publishing LLC.</rights><lds50>peer_reviewed</lds50><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c385t-534d4278f1226e4cd785e9b4fcdd9d78c5418063a04f4577c84aa0254aceeaae3</citedby><cites>FETCH-LOGICAL-c385t-534d4278f1226e4cd785e9b4fcdd9d78c5418063a04f4577c84aa0254aceeaae3</cites><orcidid>0000-0002-4192-1442</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>230,314,776,780,881,27901,27902</link.rule.ids><backlink>$$Uhttps://www.osti.gov/servlets/purl/1235262$$D View this record in Osti.gov$$Hfree_for_read</backlink></links><search><creatorcontrib>Zhang, Yuewei</creatorcontrib><creatorcontrib>Krishnamoorthy, Sriram</creatorcontrib><creatorcontrib>Johnson, Jared M.</creatorcontrib><creatorcontrib>Akyol, Fatih</creatorcontrib><creatorcontrib>Allerman, Andrew</creatorcontrib><creatorcontrib>Moseley, Michael W.</creatorcontrib><creatorcontrib>Armstrong, Andrew</creatorcontrib><creatorcontrib>Hwang, Jinwoo</creatorcontrib><creatorcontrib>Rajan, Siddharth</creatorcontrib><creatorcontrib>Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)</creatorcontrib><title>Interband tunneling for hole injection in III-nitride ultraviolet emitters</title><title>Applied physics letters</title><description>Low p-type conductivity and high contact resistance remain a critical problem in wide band gap AlGaN-based ultraviolet light emitters due to the high acceptor ionization energy. In this work, interband tunneling is demonstrated for non-equilibrium injection of holes through the use of ultra-thin polarization-engineered layers that enhance tunneling probability by several orders of magnitude over a PN homojunction. Al0.3Ga0.7N interband tunnel junctions with a low resistance of 5.6 × 10−4 Ω cm2 were obtained and integrated on ultraviolet light emitting diodes. Tunnel injection of holes was used to realize GaN-free ultraviolet light emitters with bottom and top n-type Al0.3Ga0.7N contacts. At an emission wavelength of 327 nm, stable output power of 6 W/cm2 at a current density of 120 A/cm2 with a forward voltage of 5.9 V was achieved. This demonstration of efficient interband tunneling could enable device designs for higher efficiency ultraviolet emitters.</description><subject>Aluminum gallium nitrides</subject><subject>Applied physics</subject><subject>Contact resistance</subject><subject>Emitters</subject><subject>Gallium nitrides</subject><subject>Homojunctions</subject><subject>INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY</subject><subject>Ionization</subject><subject>Low resistance</subject><subject>Organic light emitting diodes</subject><subject>Thin films</subject><subject>Tunnel junctions</subject><subject>Ultraviolet radiation</subject><issn>0003-6951</issn><issn>1077-3118</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2015</creationdate><recordtype>article</recordtype><recordid>eNotkE9LAzEUxIMoWKsHv0HQk4et-bvZPUqxulLwoueQZt_alG1Sk6zgtzfSnt4M_BjmDUK3lCwoqfkjXYiWKsnaMzSjRKmKU9qcoxkhhFd1K-klukppV6xknM_QW-czxI3xPc6T9zA6_4WHEPE2jICd34HNLviicNd1lXc5uh7wNOZoflxhMoa9yyUjXaOLwYwJbk53jj5Xzx_L12r9_tItn9aV5Y3MleSiF0w1A2WsBmF71UhoN2Kwfd8WY6WgTXnFEDEIqZRthDGESWEsgDHA5-jumBtSdjpZl8FubSjlbdaUcclqVqD7I3SI4XuClPUuTNGXXppRJlSriOSFejhSNoaUIgz6EN3exF9Nif7fU1N92pP_AaStZo4</recordid><startdate>20150406</startdate><enddate>20150406</enddate><creator>Zhang, Yuewei</creator><creator>Krishnamoorthy, Sriram</creator><creator>Johnson, Jared M.</creator><creator>Akyol, Fatih</creator><creator>Allerman, Andrew</creator><creator>Moseley, Michael W.</creator><creator>Armstrong, Andrew</creator><creator>Hwang, Jinwoo</creator><creator>Rajan, Siddharth</creator><general>American Institute of Physics</general><general>American Institute of Physics (AIP)</general><scope>AAYXX</scope><scope>CITATION</scope><scope>8FD</scope><scope>H8D</scope><scope>L7M</scope><scope>OIOZB</scope><scope>OTOTI</scope><orcidid>https://orcid.org/0000-0002-4192-1442</orcidid></search><sort><creationdate>20150406</creationdate><title>Interband tunneling for hole injection in III-nitride ultraviolet emitters</title><author>Zhang, Yuewei ; Krishnamoorthy, Sriram ; Johnson, Jared M. ; Akyol, Fatih ; Allerman, Andrew ; Moseley, Michael W. ; Armstrong, Andrew ; Hwang, Jinwoo ; Rajan, Siddharth</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c385t-534d4278f1226e4cd785e9b4fcdd9d78c5418063a04f4577c84aa0254aceeaae3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2015</creationdate><topic>Aluminum gallium nitrides</topic><topic>Applied physics</topic><topic>Contact resistance</topic><topic>Emitters</topic><topic>Gallium nitrides</topic><topic>Homojunctions</topic><topic>INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY</topic><topic>Ionization</topic><topic>Low resistance</topic><topic>Organic light emitting diodes</topic><topic>Thin films</topic><topic>Tunnel junctions</topic><topic>Ultraviolet radiation</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Zhang, Yuewei</creatorcontrib><creatorcontrib>Krishnamoorthy, Sriram</creatorcontrib><creatorcontrib>Johnson, Jared M.</creatorcontrib><creatorcontrib>Akyol, Fatih</creatorcontrib><creatorcontrib>Allerman, Andrew</creatorcontrib><creatorcontrib>Moseley, Michael W.</creatorcontrib><creatorcontrib>Armstrong, Andrew</creatorcontrib><creatorcontrib>Hwang, Jinwoo</creatorcontrib><creatorcontrib>Rajan, Siddharth</creatorcontrib><creatorcontrib>Sandia National Lab. 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Tunnel injection of holes was used to realize GaN-free ultraviolet light emitters with bottom and top n-type Al0.3Ga0.7N contacts. At an emission wavelength of 327 nm, stable output power of 6 W/cm2 at a current density of 120 A/cm2 with a forward voltage of 5.9 V was achieved. This demonstration of efficient interband tunneling could enable device designs for higher efficiency ultraviolet emitters.</abstract><cop>Melville</cop><pub>American Institute of Physics</pub><doi>10.1063/1.4917529</doi><orcidid>https://orcid.org/0000-0002-4192-1442</orcidid><oa>free_for_read</oa></addata></record> |
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| source | AIP Journals Complete; Alma/SFX Local Collection |
| subjects | Aluminum gallium nitrides Applied physics Contact resistance Emitters Gallium nitrides Homojunctions INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY Ionization Low resistance Organic light emitting diodes Thin films Tunnel junctions Ultraviolet radiation |
| title | Interband tunneling for hole injection in III-nitride ultraviolet emitters |
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