Titanium nitride as a seed layer for Heusler compounds
Titanium nitride (TiN) shows low resistivity at room temperature (27 μΩ cm), high thermal stability and thus has the potential to serve as seed layer in magnetic tunnel junctions. High quality TiN thin films with regard to the crystallographic and electrical properties were grown and characterized b...
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| Veröffentlicht in: | Journal of applied physics 2015-12, Vol.118 (24) |
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| container_title | Journal of applied physics |
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| creator | Niesen, Alessia Glas, Manuel Ludwig, Jana Schmalhorst, Jan-Michael Sahoo, Roshnee Ebke, Daniel Arenholz, Elke Reiss, Günter |
| description | Titanium nitride (TiN) shows low resistivity at room temperature (27 μΩ cm), high thermal stability and thus has the potential to serve as seed layer in magnetic tunnel junctions. High quality TiN thin films with regard to the crystallographic and electrical properties were grown and characterized by x-ray diffraction and 4-terminal transport measurements. Element specific x-ray absorption spectroscopy revealed pure TiN inside the thin films. To investigate the influence of a TiN seed layer on a ferro(i)magnetic bottom electrode in magnetic tunnel junctions, an out-of-plane magnetized Mn2.45Ga as well as in- and out-of-plane magnetized Co2FeAl thin films were deposited on a TiN buffer, respectively. The magnetic properties were investigated using a superconducting quantum interference device and anomalous Hall effect for Mn2.45Ga. Magneto optical Kerr effect measurements were carried out to investigate the magnetic properties of Co2FeAl. TiN buffered Mn2.45Ga thin films showed higher coercivity and squareness ratio compared to unbuffered samples. The Heusler compound Co2FeAl showed already good crystallinity when grown at room temperature on a TiN seed-layer. |
| doi_str_mv | 10.1063/1.4938388 |
| format | Article |
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High quality TiN thin films with regard to the crystallographic and electrical properties were grown and characterized by x-ray diffraction and 4-terminal transport measurements. Element specific x-ray absorption spectroscopy revealed pure TiN inside the thin films. To investigate the influence of a TiN seed layer on a ferro(i)magnetic bottom electrode in magnetic tunnel junctions, an out-of-plane magnetized Mn2.45Ga as well as in- and out-of-plane magnetized Co2FeAl thin films were deposited on a TiN buffer, respectively. The magnetic properties were investigated using a superconducting quantum interference device and anomalous Hall effect for Mn2.45Ga. Magneto optical Kerr effect measurements were carried out to investigate the magnetic properties of Co2FeAl. TiN buffered Mn2.45Ga thin films showed higher coercivity and squareness ratio compared to unbuffered samples. The Heusler compound Co2FeAl showed already good crystallinity when grown at room temperature on a TiN seed-layer.</description><identifier>ISSN: 0021-8979</identifier><identifier>EISSN: 1089-7550</identifier><identifier>DOI: 10.1063/1.4938388</identifier><language>eng</language><publisher>Melville: American Institute of Physics</publisher><subject>Applied physics ; Buffers ; Coercivity ; Crystallography ; Electrical junctions ; Electrical properties ; Hall effect ; Kerr magnetooptical effect ; Magnetic properties ; Magnetism ; Optical properties ; Superconducting quantum interference devices ; Thermal stability ; Thin films ; Titanium compounds ; Titanium nitride ; Tunnel junctions ; X ray absorption ; X-ray diffraction</subject><ispartof>Journal of applied physics, 2015-12, Vol.118 (24)</ispartof><rights>2015 AIP Publishing LLC.</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c350t-e759fa8d5b16856f36bbb4d84d7207bd5fe583f57c7dacabbe7657914471227b3</citedby><cites>FETCH-LOGICAL-c350t-e759fa8d5b16856f36bbb4d84d7207bd5fe583f57c7dacabbe7657914471227b3</cites><orcidid>0000-0001-5508-3235 ; 0000000155083235</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>230,314,780,784,885,27923,27924</link.rule.ids><backlink>$$Uhttps://www.osti.gov/biblio/1234027$$D View this record in Osti.gov$$Hfree_for_read</backlink></links><search><creatorcontrib>Niesen, Alessia</creatorcontrib><creatorcontrib>Glas, Manuel</creatorcontrib><creatorcontrib>Ludwig, Jana</creatorcontrib><creatorcontrib>Schmalhorst, Jan-Michael</creatorcontrib><creatorcontrib>Sahoo, Roshnee</creatorcontrib><creatorcontrib>Ebke, Daniel</creatorcontrib><creatorcontrib>Arenholz, Elke</creatorcontrib><creatorcontrib>Reiss, Günter</creatorcontrib><title>Titanium nitride as a seed layer for Heusler compounds</title><title>Journal of applied physics</title><description>Titanium nitride (TiN) shows low resistivity at room temperature (27 μΩ cm), high thermal stability and thus has the potential to serve as seed layer in magnetic tunnel junctions. High quality TiN thin films with regard to the crystallographic and electrical properties were grown and characterized by x-ray diffraction and 4-terminal transport measurements. Element specific x-ray absorption spectroscopy revealed pure TiN inside the thin films. To investigate the influence of a TiN seed layer on a ferro(i)magnetic bottom electrode in magnetic tunnel junctions, an out-of-plane magnetized Mn2.45Ga as well as in- and out-of-plane magnetized Co2FeAl thin films were deposited on a TiN buffer, respectively. The magnetic properties were investigated using a superconducting quantum interference device and anomalous Hall effect for Mn2.45Ga. Magneto optical Kerr effect measurements were carried out to investigate the magnetic properties of Co2FeAl. TiN buffered Mn2.45Ga thin films showed higher coercivity and squareness ratio compared to unbuffered samples. The Heusler compound Co2FeAl showed already good crystallinity when grown at room temperature on a TiN seed-layer.</description><subject>Applied physics</subject><subject>Buffers</subject><subject>Coercivity</subject><subject>Crystallography</subject><subject>Electrical junctions</subject><subject>Electrical properties</subject><subject>Hall effect</subject><subject>Kerr magnetooptical effect</subject><subject>Magnetic properties</subject><subject>Magnetism</subject><subject>Optical properties</subject><subject>Superconducting quantum interference devices</subject><subject>Thermal stability</subject><subject>Thin films</subject><subject>Titanium compounds</subject><subject>Titanium nitride</subject><subject>Tunnel junctions</subject><subject>X ray absorption</subject><subject>X-ray diffraction</subject><issn>0021-8979</issn><issn>1089-7550</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2015</creationdate><recordtype>article</recordtype><recordid>eNotkMtKAzEARYMoWKsL_yDoysXUPCavpRRrhYKbug55Yko7qUlm0b93pF3duzhcLgeAR4wWGHH6ihe9opJKeQVmGEnVCcbQNZghRHAnlVC34K7WHUIYS6pmgG9TM0MaD3BIrSQfoKnQwBqCh3tzCgXGXOA6jHU_dZcPxzwOvt6Dm2j2NTxccg6-V-_b5brbfH18Lt82naMMtS4IpqKRnlnMJeORcmtt72XvBUHCehYDkzQy4YQ3zlgbBGdC4b4XmBBh6Rw8nXdzbUlXl1pwPy4PQ3BNY0J7RMQEPZ-hY8m_Y6hN7_JYhumXJhMjOOaTlDl4OVOu5FpLiPpY0sGUk8ZI_7vTWF_c0T84E169</recordid><startdate>20151228</startdate><enddate>20151228</enddate><creator>Niesen, Alessia</creator><creator>Glas, Manuel</creator><creator>Ludwig, Jana</creator><creator>Schmalhorst, Jan-Michael</creator><creator>Sahoo, Roshnee</creator><creator>Ebke, Daniel</creator><creator>Arenholz, Elke</creator><creator>Reiss, Günter</creator><general>American Institute of Physics</general><scope>AAYXX</scope><scope>CITATION</scope><scope>8FD</scope><scope>H8D</scope><scope>L7M</scope><scope>OTOTI</scope><orcidid>https://orcid.org/0000-0001-5508-3235</orcidid><orcidid>https://orcid.org/0000000155083235</orcidid></search><sort><creationdate>20151228</creationdate><title>Titanium nitride as a seed layer for Heusler compounds</title><author>Niesen, Alessia ; Glas, Manuel ; Ludwig, Jana ; Schmalhorst, Jan-Michael ; Sahoo, Roshnee ; Ebke, Daniel ; Arenholz, Elke ; Reiss, Günter</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c350t-e759fa8d5b16856f36bbb4d84d7207bd5fe583f57c7dacabbe7657914471227b3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2015</creationdate><topic>Applied physics</topic><topic>Buffers</topic><topic>Coercivity</topic><topic>Crystallography</topic><topic>Electrical junctions</topic><topic>Electrical properties</topic><topic>Hall effect</topic><topic>Kerr magnetooptical effect</topic><topic>Magnetic properties</topic><topic>Magnetism</topic><topic>Optical properties</topic><topic>Superconducting quantum interference devices</topic><topic>Thermal stability</topic><topic>Thin films</topic><topic>Titanium compounds</topic><topic>Titanium nitride</topic><topic>Tunnel junctions</topic><topic>X ray absorption</topic><topic>X-ray diffraction</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Niesen, Alessia</creatorcontrib><creatorcontrib>Glas, Manuel</creatorcontrib><creatorcontrib>Ludwig, Jana</creatorcontrib><creatorcontrib>Schmalhorst, Jan-Michael</creatorcontrib><creatorcontrib>Sahoo, Roshnee</creatorcontrib><creatorcontrib>Ebke, Daniel</creatorcontrib><creatorcontrib>Arenholz, Elke</creatorcontrib><creatorcontrib>Reiss, Günter</creatorcontrib><collection>CrossRef</collection><collection>Technology Research Database</collection><collection>Aerospace Database</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>OSTI.GOV</collection><jtitle>Journal of applied physics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Niesen, Alessia</au><au>Glas, Manuel</au><au>Ludwig, Jana</au><au>Schmalhorst, Jan-Michael</au><au>Sahoo, Roshnee</au><au>Ebke, Daniel</au><au>Arenholz, Elke</au><au>Reiss, Günter</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Titanium nitride as a seed layer for Heusler compounds</atitle><jtitle>Journal of applied physics</jtitle><date>2015-12-28</date><risdate>2015</risdate><volume>118</volume><issue>24</issue><issn>0021-8979</issn><eissn>1089-7550</eissn><abstract>Titanium nitride (TiN) shows low resistivity at room temperature (27 μΩ cm), high thermal stability and thus has the potential to serve as seed layer in magnetic tunnel junctions. High quality TiN thin films with regard to the crystallographic and electrical properties were grown and characterized by x-ray diffraction and 4-terminal transport measurements. Element specific x-ray absorption spectroscopy revealed pure TiN inside the thin films. To investigate the influence of a TiN seed layer on a ferro(i)magnetic bottom electrode in magnetic tunnel junctions, an out-of-plane magnetized Mn2.45Ga as well as in- and out-of-plane magnetized Co2FeAl thin films were deposited on a TiN buffer, respectively. The magnetic properties were investigated using a superconducting quantum interference device and anomalous Hall effect for Mn2.45Ga. Magneto optical Kerr effect measurements were carried out to investigate the magnetic properties of Co2FeAl. TiN buffered Mn2.45Ga thin films showed higher coercivity and squareness ratio compared to unbuffered samples. The Heusler compound Co2FeAl showed already good crystallinity when grown at room temperature on a TiN seed-layer.</abstract><cop>Melville</cop><pub>American Institute of Physics</pub><doi>10.1063/1.4938388</doi><orcidid>https://orcid.org/0000-0001-5508-3235</orcidid><orcidid>https://orcid.org/0000000155083235</orcidid></addata></record> |
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| source | AIP Journals Complete; Alma/SFX Local Collection |
| subjects | Applied physics Buffers Coercivity Crystallography Electrical junctions Electrical properties Hall effect Kerr magnetooptical effect Magnetic properties Magnetism Optical properties Superconducting quantum interference devices Thermal stability Thin films Titanium compounds Titanium nitride Tunnel junctions X ray absorption X-ray diffraction |
| title | Titanium nitride as a seed layer for Heusler compounds |
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