The origin of deep-level impurity transitions in hexagonal boron nitride

Deep ultraviolet photoluminescence (PL) emission spectroscopy has been employed to investigate the origin of the widely observed deep level impurity related donor-acceptor pair (DAP) transition with an emission peak near 4.1 eV in hexagonal boron nitride (h-BN). A set of h-BN epilayers were grown by...

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Veröffentlicht in:	Applied physics letters 2015-01, Vol.106 (2)
Hauptverfasser:	Du, X. Z., Li, J., Lin, J. Y., Jiang, H. X.
Format:	Artikel
Sprache:	eng
Schlagworte:	Ammonia Applied physics Boron nitride Emission analysis Energy levels Energy measurement Flow velocity Free energy Heat of formation Impurities Metalorganic chemical vapor deposition Organic chemicals Organic chemistry Photoluminescence Spectrum analysis Temperature dependence
Online-Zugang:	Volltext
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