Strain-driven growth of GaAs(111) quantum dots with low fine structure splitting
Symmetric quantum dots (QDs) on (111)-oriented surfaces are promising candidates for generating polarization-entangled photons due to their low excitonic fine structure splitting (FSS). However, (111) QDs are difficult to grow. The conventional use of compressive strain to drive QD self-assembly fai...
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| Veröffentlicht in: | Applied physics letters 2014-12, Vol.105 (25) |
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| container_title | Applied physics letters |
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| creator | Yerino, Christopher D. Simmonds, Paul J. Liang, Baolai Jung, Daehwan Schneider, Christian Unsleber, Sebastian Vo, Minh Huffaker, Diana L. Höfling, Sven Kamp, Martin Lee, Minjoo Larry |
| description | Symmetric quantum dots (QDs) on (111)-oriented surfaces are promising candidates for generating polarization-entangled photons due to their low excitonic fine structure splitting (FSS). However, (111) QDs are difficult to grow. The conventional use of compressive strain to drive QD self-assembly fails to form 3D nanostructures on (111) surfaces. Instead, we demonstrate that (111) QDs self-assemble under tensile strain by growing GaAs QDs on an InP(111)A substrate. Tensile GaAs self-assembly produces a low density of QDs with a symmetric triangular morphology. Coherent, tensile QDs are observed without dislocations, and the QDs luminescence at room temperature. Single QD measurements reveal low FSS with a median value of 7.6 μeV, due to the high symmetry of the (111) QDs. Tensile self-assembly thus offers a simple route to symmetric (111) QDs for entangled photon emitters. |
| doi_str_mv | 10.1063/1.4904944 |
| format | Article |
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However, (111) QDs are difficult to grow. The conventional use of compressive strain to drive QD self-assembly fails to form 3D nanostructures on (111) surfaces. Instead, we demonstrate that (111) QDs self-assemble under tensile strain by growing GaAs QDs on an InP(111)A substrate. Tensile GaAs self-assembly produces a low density of QDs with a symmetric triangular morphology. Coherent, tensile QDs are observed without dislocations, and the QDs luminescence at room temperature. Single QD measurements reveal low FSS with a median value of 7.6 μeV, due to the high symmetry of the (111) QDs. 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However, (111) QDs are difficult to grow. The conventional use of compressive strain to drive QD self-assembly fails to form 3D nanostructures on (111) surfaces. Instead, we demonstrate that (111) QDs self-assemble under tensile strain by growing GaAs QDs on an InP(111)A substrate. Tensile GaAs self-assembly produces a low density of QDs with a symmetric triangular morphology. Coherent, tensile QDs are observed without dislocations, and the QDs luminescence at room temperature. Single QD measurements reveal low FSS with a median value of 7.6 μeV, due to the high symmetry of the (111) QDs. 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| source | AIP Journals Complete; Alma/SFX Local Collection |
| subjects | Applied physics Compressive properties Dislocations Emitters Fine structure Morphology Photons Quantum dots Quantum theory Self-assembly Splitting Substrates Symmetry Tensile strain |
| title | Strain-driven growth of GaAs(111) quantum dots with low fine structure splitting |
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