Spontaneous lateral phase separation of AlInP during thin film growth and its effect on luminescence
The occurrence of spontaneous lateral phase separation during thin film growth of AlxIn1−xP by metal-organic chemical vapor deposition was investigated using a combination of transmission electron microscopy and atom probe tomography to obtain a quantitative view of this phenomenon. An anisotropic a...
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| Veröffentlicht in: | Journal of applied physics 2015-09, Vol.118 (11) |
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| creator | Mukherjee, Kunal Norman, Andrew G. Akey, Austin J. Buonassisi, Tonio Fitzgerald, Eugene A. |
| description | The occurrence of spontaneous lateral phase separation during thin film growth of AlxIn1−xP by metal-organic chemical vapor deposition was investigated using a combination of transmission electron microscopy and atom probe tomography to obtain a quantitative view of this phenomenon. An anisotropic and coherent composition modulation was observed in the nearly lattice-matched films deposited below 750 °C with a quasi-linear amplification with thickness that was inversely proportional to the growth temperature. The periodicity of the modulation increased exponentially with the growth temperature. A comparison of photoluminescence from phase separated and homogenous direct band gap AlxIn1−xP deposited on metamorphic InyGa1−yAs graded buffers showed a lowering of peak-emission energy in accordance with the atom probe compositional characterization without any degradation in luminous intensity. Additionally, indications of carrier trapping in the low band gap regions were observed even at room-temperature. While some of these results are in qualitative agreement with theoretical models of kinetic instability in unstrained alloy growth in the literature, significant discrepancies remain. |
| doi_str_mv | 10.1063/1.4930990 |
| format | Article |
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(NREL), Golden, CO (United States)</creatorcontrib><description>The occurrence of spontaneous lateral phase separation during thin film growth of AlxIn1−xP by metal-organic chemical vapor deposition was investigated using a combination of transmission electron microscopy and atom probe tomography to obtain a quantitative view of this phenomenon. An anisotropic and coherent composition modulation was observed in the nearly lattice-matched films deposited below 750 °C with a quasi-linear amplification with thickness that was inversely proportional to the growth temperature. The periodicity of the modulation increased exponentially with the growth temperature. A comparison of photoluminescence from phase separated and homogenous direct band gap AlxIn1−xP deposited on metamorphic InyGa1−yAs graded buffers showed a lowering of peak-emission energy in accordance with the atom probe compositional characterization without any degradation in luminous intensity. Additionally, indications of carrier trapping in the low band gap regions were observed even at room-temperature. While some of these results are in qualitative agreement with theoretical models of kinetic instability in unstrained alloy growth in the literature, significant discrepancies remain.</description><identifier>ISSN: 0021-8979</identifier><identifier>EISSN: 1089-7550</identifier><identifier>DOI: 10.1063/1.4930990</identifier><language>eng</language><publisher>Melville: American Institute of Physics</publisher><subject>aluminium ; Applied physics ; Band gap ; chemical vapor deposition ; emission spectroscopy ; Energy gap ; Film growth ; III-V semiconductors ; Lattice matching ; Luminous intensity ; MATERIALS SCIENCE ; Metalorganic chemical vapor deposition ; Modulation ; optical metrology ; Organic chemicals ; Organic chemistry ; Periodic variations ; Phase separation ; phase transitions ; Photoluminescence ; photoluminescence spectroscopy ; Qualitative analysis ; quantum wells ; semiconductors ; SOLAR ENERGY ; Stability ; thin film growth ; Thin films ; tomography ; Transmission electron microscopy</subject><ispartof>Journal of applied physics, 2015-09, Vol.118 (11)</ispartof><rights>2015 AIP Publishing LLC.</rights><lds50>peer_reviewed</lds50><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c385t-a777e4cd53ab1733e5db8b81d6aa62694e9dd2abd7edb4c40aadd5ffa25b14a3</citedby><cites>FETCH-LOGICAL-c385t-a777e4cd53ab1733e5db8b81d6aa62694e9dd2abd7edb4c40aadd5ffa25b14a3</cites><orcidid>0000-0001-6368-521X ; 000000016368521X</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>230,314,780,784,885,27924,27925</link.rule.ids><backlink>$$Uhttps://www.osti.gov/servlets/purl/1225962$$D View this record in Osti.gov$$Hfree_for_read</backlink></links><search><creatorcontrib>Mukherjee, Kunal</creatorcontrib><creatorcontrib>Norman, Andrew G.</creatorcontrib><creatorcontrib>Akey, Austin J.</creatorcontrib><creatorcontrib>Buonassisi, Tonio</creatorcontrib><creatorcontrib>Fitzgerald, Eugene A.</creatorcontrib><creatorcontrib>National Renewable Energy Lab. (NREL), Golden, CO (United States)</creatorcontrib><title>Spontaneous lateral phase separation of AlInP during thin film growth and its effect on luminescence</title><title>Journal of applied physics</title><description>The occurrence of spontaneous lateral phase separation during thin film growth of AlxIn1−xP by metal-organic chemical vapor deposition was investigated using a combination of transmission electron microscopy and atom probe tomography to obtain a quantitative view of this phenomenon. An anisotropic and coherent composition modulation was observed in the nearly lattice-matched films deposited below 750 °C with a quasi-linear amplification with thickness that was inversely proportional to the growth temperature. The periodicity of the modulation increased exponentially with the growth temperature. A comparison of photoluminescence from phase separated and homogenous direct band gap AlxIn1−xP deposited on metamorphic InyGa1−yAs graded buffers showed a lowering of peak-emission energy in accordance with the atom probe compositional characterization without any degradation in luminous intensity. Additionally, indications of carrier trapping in the low band gap regions were observed even at room-temperature. While some of these results are in qualitative agreement with theoretical models of kinetic instability in unstrained alloy growth in the literature, significant discrepancies remain.</description><subject>aluminium</subject><subject>Applied physics</subject><subject>Band gap</subject><subject>chemical vapor deposition</subject><subject>emission spectroscopy</subject><subject>Energy gap</subject><subject>Film growth</subject><subject>III-V semiconductors</subject><subject>Lattice matching</subject><subject>Luminous intensity</subject><subject>MATERIALS SCIENCE</subject><subject>Metalorganic chemical vapor deposition</subject><subject>Modulation</subject><subject>optical metrology</subject><subject>Organic chemicals</subject><subject>Organic chemistry</subject><subject>Periodic variations</subject><subject>Phase separation</subject><subject>phase transitions</subject><subject>Photoluminescence</subject><subject>photoluminescence spectroscopy</subject><subject>Qualitative analysis</subject><subject>quantum wells</subject><subject>semiconductors</subject><subject>SOLAR ENERGY</subject><subject>Stability</subject><subject>thin film growth</subject><subject>Thin films</subject><subject>tomography</subject><subject>Transmission electron microscopy</subject><issn>0021-8979</issn><issn>1089-7550</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2015</creationdate><recordtype>article</recordtype><recordid>eNot0EtLxDAUBeAgCo6Phf8g6MpFNY-2aZYivkBQcPbhNrmdiXSSmqSI_97KuLqb7x4Oh5ALzm44a-Utv6m1ZFqzA7LirNOVahp2SFaMCV51WuljcpLzJ2Ocd1KviPuYYigQMM6ZjlAwwUinLWSkGSdIUHwMNA70bnwJ79TNyYcNLVsf6ODHHd2k-F22FIKjvmSKw4C20OVlnHc-YLYYLJ6RowHGjOf_95SsHx_W98_V69vTy_3da2Vl15QKlFJYW9dI6LmSEhvXd33HXQvQilbXqJ0T0DuFrq9tzQCca4YBRNPzGuQpudzHxly8ydYXtFsbQ1gqGS5Eo1uxoKs9mlL8mjEX8xnnFJZaRnAhlWILXNT1XtkUc044mCn5HaQfw5n5G9pw8z-0_AW6PXEG</recordid><startdate>20150921</startdate><enddate>20150921</enddate><creator>Mukherjee, Kunal</creator><creator>Norman, Andrew G.</creator><creator>Akey, Austin J.</creator><creator>Buonassisi, Tonio</creator><creator>Fitzgerald, Eugene A.</creator><general>American Institute of Physics</general><general>American Institute of Physics (AIP)</general><scope>AAYXX</scope><scope>CITATION</scope><scope>8FD</scope><scope>H8D</scope><scope>L7M</scope><scope>OIOZB</scope><scope>OTOTI</scope><orcidid>https://orcid.org/0000-0001-6368-521X</orcidid><orcidid>https://orcid.org/000000016368521X</orcidid></search><sort><creationdate>20150921</creationdate><title>Spontaneous lateral phase separation of AlInP during thin film growth and its effect on luminescence</title><author>Mukherjee, Kunal ; Norman, Andrew G. ; Akey, Austin J. ; Buonassisi, Tonio ; Fitzgerald, Eugene A.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c385t-a777e4cd53ab1733e5db8b81d6aa62694e9dd2abd7edb4c40aadd5ffa25b14a3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2015</creationdate><topic>aluminium</topic><topic>Applied physics</topic><topic>Band gap</topic><topic>chemical vapor deposition</topic><topic>emission spectroscopy</topic><topic>Energy gap</topic><topic>Film growth</topic><topic>III-V semiconductors</topic><topic>Lattice matching</topic><topic>Luminous intensity</topic><topic>MATERIALS SCIENCE</topic><topic>Metalorganic chemical vapor deposition</topic><topic>Modulation</topic><topic>optical metrology</topic><topic>Organic chemicals</topic><topic>Organic chemistry</topic><topic>Periodic variations</topic><topic>Phase separation</topic><topic>phase transitions</topic><topic>Photoluminescence</topic><topic>photoluminescence spectroscopy</topic><topic>Qualitative analysis</topic><topic>quantum wells</topic><topic>semiconductors</topic><topic>SOLAR ENERGY</topic><topic>Stability</topic><topic>thin film growth</topic><topic>Thin films</topic><topic>tomography</topic><topic>Transmission electron microscopy</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Mukherjee, Kunal</creatorcontrib><creatorcontrib>Norman, Andrew G.</creatorcontrib><creatorcontrib>Akey, Austin J.</creatorcontrib><creatorcontrib>Buonassisi, Tonio</creatorcontrib><creatorcontrib>Fitzgerald, Eugene A.</creatorcontrib><creatorcontrib>National Renewable Energy Lab. 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(NREL), Golden, CO (United States)</aucorp><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Spontaneous lateral phase separation of AlInP during thin film growth and its effect on luminescence</atitle><jtitle>Journal of applied physics</jtitle><date>2015-09-21</date><risdate>2015</risdate><volume>118</volume><issue>11</issue><issn>0021-8979</issn><eissn>1089-7550</eissn><abstract>The occurrence of spontaneous lateral phase separation during thin film growth of AlxIn1−xP by metal-organic chemical vapor deposition was investigated using a combination of transmission electron microscopy and atom probe tomography to obtain a quantitative view of this phenomenon. An anisotropic and coherent composition modulation was observed in the nearly lattice-matched films deposited below 750 °C with a quasi-linear amplification with thickness that was inversely proportional to the growth temperature. The periodicity of the modulation increased exponentially with the growth temperature. A comparison of photoluminescence from phase separated and homogenous direct band gap AlxIn1−xP deposited on metamorphic InyGa1−yAs graded buffers showed a lowering of peak-emission energy in accordance with the atom probe compositional characterization without any degradation in luminous intensity. Additionally, indications of carrier trapping in the low band gap regions were observed even at room-temperature. While some of these results are in qualitative agreement with theoretical models of kinetic instability in unstrained alloy growth in the literature, significant discrepancies remain.</abstract><cop>Melville</cop><pub>American Institute of Physics</pub><doi>10.1063/1.4930990</doi><orcidid>https://orcid.org/0000-0001-6368-521X</orcidid><orcidid>https://orcid.org/000000016368521X</orcidid><oa>free_for_read</oa></addata></record> |
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| source | American Institute of Physics; Alma/SFX Local Collection |
| subjects | aluminium Applied physics Band gap chemical vapor deposition emission spectroscopy Energy gap Film growth III-V semiconductors Lattice matching Luminous intensity MATERIALS SCIENCE Metalorganic chemical vapor deposition Modulation optical metrology Organic chemicals Organic chemistry Periodic variations Phase separation phase transitions Photoluminescence photoluminescence spectroscopy Qualitative analysis quantum wells semiconductors SOLAR ENERGY Stability thin film growth Thin films tomography Transmission electron microscopy |
| title | Spontaneous lateral phase separation of AlInP during thin film growth and its effect on luminescence |
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