Explaining the x-ray nonlinear susceptibility of diamond and silicon near absorption edges

We report the observation and the theoretical explanation of the parametric down-conversion nonlinear susceptibility at the K-absorption edge of diamond and at the L23-absorption edge of a silicon crystal. Using arguments similar to those invoked to successfully predict resonant inelastic x-ray spec...

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Veröffentlicht in:Physical review. B 2015-10, Vol.92 (15), Article 155119
Hauptverfasser: Barbiellini, B., Joly, Y., Tamasaku, Kenji
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Joly, Y.
Tamasaku, Kenji
description We report the observation and the theoretical explanation of the parametric down-conversion nonlinear susceptibility at the K-absorption edge of diamond and at the L23-absorption edge of a silicon crystal. Using arguments similar to those invoked to successfully predict resonant inelastic x-ray spectra, we derive an expression for the renormalization term of the nonlinear susceptibility at the x-ray edges, which can be evaluated by using first-principles calculations of the atomic scattering factor f1. Our model is shown to reproduce the observed enhancement of the parametric down-conversion at the diamond K and the Si L23 edges rather than the suppression previously claimed.
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source American Physical Society
subjects Condensed Matter
Diamonds
Inelastic scattering
Mathematical models
Nonlinearity
Other
Physics
Silicon
Spectra
X-rays
title Explaining the x-ray nonlinear susceptibility of diamond and silicon near absorption edges
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