Influence of Sb incorporation on InGaAs(Sb)N/GaAs band alignment

Influence of Sb incorporation on InGaAs(Sb)N/GaAs band alignment

We have investigated the influence of Sb incorporation on the effective band gaps and band offsets at InGaAs(Sb)N/GaAs interfaces grown by metalorganic vapor phase epitaxy. Cross-sectional scanning tunneling microscopy and spectroscopy reveal 1.2 eV (1.1 eV) effective band gaps of InGaAs(Sb)N alloys...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Veröffentlicht in:Applied physics letters 2014-10, Vol.105 (14)
Hauptverfasser: Chang, A. S., Zech, E. S., Kim, T. W., Lin, Y. H., Mawst, L. J., Goldman, R. S.
Format: Artikel
Sprache:eng
Schlagworte:
Applied physics
Energy gap
Epitaxial growth
Gallium arsenide
Incorporation
Indium gallium arsenides
Metalorganic chemical vapor deposition
Offsets
Valence band
Online-Zugang:Volltext
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:We have investigated the influence of Sb incorporation on the effective band gaps and band offsets at InGaAs(Sb)N/GaAs interfaces grown by metalorganic vapor phase epitaxy. Cross-sectional scanning tunneling microscopy and spectroscopy reveal 1.2 eV (1.1 eV) effective band gaps of InGaAs(Sb)N alloys. At the InGaAsN/GaAs (InGaAsSbN/GaAs) interfaces, type II (type I) band offsets are observed. We discuss the relative influences of strain-induced splitting of the valence band and the incorporation of Sb on the band gaps and band offsets at InGaAsN/GaAs and InGaAsSbN/GaAs interfaces.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.4896781