Studies of Relaxation Processes and Basal Plane Dislocations in CVD Grown Homoepitaxial Layers of 4H-SiC

Dislocation behavior during homo-epitaxy of 4H-SiC on offcut substrates by Chemical Vapor Deposition (CVD) has been studied using Synchrotron X-ray Topography and KOH etching. Studies carried out before and after epilayer growth have revealed that, in some cases, short, edge oriented segments of bas...

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Veröffentlicht in:	ECS transactions 2014-08, Vol.64 (7), p.213-222
Hauptverfasser:	Wang, Huanhuan, Wu, Fangzhen, Yang, Yu, Guo, Jianqiu, Raghothamachar, B, Dudley, Michael, Zhang, Jie, Chung, Gil, Thomas, Berndt, Sanchez, Edward K, Mueller, Stephan, Hansen, Darren, Loboda, Mark
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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