Characterization of V-shaped Defects in 4H-SiC Homoepitaxial Layers

Synchrotron white beam x-ray topography images show that faint needle-like surface morphological features observed on the Si-face of 4H-SiC homoepitaxial layers using Nomarski optical microscopy are associated with V-shaped stacking faults in the epilayer. KOH etching of the V-shaped defects reveals...

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Veröffentlicht in:	Journal of electronic materials 2015-05, Vol.44 (5), p.1293-1299
Hauptverfasser:	Wu, Fangzhen, Wang, Huanhuan, Raghothamachar, Balaji, Dudley, Michael, Chung, Gil, Zhang, Jie, Thomas, Bernd, Sanchez, Edward K., Mueller, Stephan G., Hansen, Darren, Loboda, Mark J., Zhang, Lihua, Su, Dong, Kisslinger, Kim, Stach, Eric
Format:	Artikel
Sprache:	eng
Schlagworte:	Boundary layer Characterization and Evaluation of Materials Chemistry and Materials Science Electronics and Microelectronics Instrumentation Materials Science Optical and Electronic Materials Optical properties Solid State Physics Topography X-rays
Online-Zugang:	Volltext
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