Low-Frequency Raman Fingerprints of Two-Dimensional Metal Dichalcogenide Layer Stacking Configurations
The tunable optoelectronic properties of stacked two-dimensional (2D) crystal monolayers are determined by their stacking orientation, order, and atomic registry. Atomic-resolution Z-contrast scanning transmission electron microscopy (AR-Z-STEM) and electron energy loss spectroscopy (EELS) can be us...
Gespeichert in:
| Veröffentlicht in: | ACS nano 2015-06, Vol.9 (6), p.6333-6342 |
|---|---|
| Hauptverfasser: | , , , , , , , , , , |
| Format: | Artikel |
| Sprache: | eng |
| Schlagworte: | |
| Online-Zugang: | Volltext |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| container_end_page | 6342 |
|---|---|
| container_issue | 6 |
| container_start_page | 6333 |
| container_title | ACS nano |
| container_volume | 9 |
| creator | Puretzky, Alexander A Liang, Liangbo Li, Xufan Xiao, Kai Wang, Kai Mahjouri-Samani, Masoud Basile, Leonardo Idrobo, Juan Carlos Sumpter, Bobby G Meunier, Vincent Geohegan, David B |
| description | The tunable optoelectronic properties of stacked two-dimensional (2D) crystal monolayers are determined by their stacking orientation, order, and atomic registry. Atomic-resolution Z-contrast scanning transmission electron microscopy (AR-Z-STEM) and electron energy loss spectroscopy (EELS) can be used to determine the exact atomic registration between different layers, in few-layer 2D stacks; however, fast optical characterization techniques are essential for rapid development of the field. Here, using two- and three-layer MoSe2 and WSe2 crystals synthesized by chemical vapor deposition, we show that the generally unexplored low frequency (LF) Raman modes ( |
| doi_str_mv | 10.1021/acsnano.5b01884 |
| format | Article |
| fullrecord | <record><control><sourceid>proquest_osti_</sourceid><recordid>TN_cdi_osti_scitechconnect_1193188</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>1691015480</sourcerecordid><originalsourceid>FETCH-LOGICAL-a467t-650460af50f836e724920642b4a4f22de0ea462c9490368ca8be2022cc6f1a403</originalsourceid><addsrcrecordid>eNp1kU1rGzEURUVpaL667q4MXQXCxJKs0WiWxY7bgkOgTaA78Sw_OUpnpETSEPzvI2M3u2wkLc69oHMJ-cLoFaOcTcAkDz5cNSvKlBIfyAnrprKmSv79-PZu2DE5TemR0qZVrfxEjnnTyUa16oTYZXipFxGfR_RmW_2GAXy1cH6D8Sk6n1MVbHX3Euq5G9AnFzz01Q3mcs6deYDehA16t8ZqCVuM1Z8M5l-JV7PgrduMEXLJpHNyZKFP-Plwn5H7xfXd7Ge9vP3xa_Z9WYOQba5lQ4WkYBtq1VRiy0XHqRR8JUBYztdIsYDcdKKjU6kMqBVyyrkx0jIQdHpGvu17Q8pOJ-MymgcTvEeTNSs-iqUCXeyhpxjKv1PWg0sG-x48hjFpJjtGWSPUrm-yR00MKUW0ulgZIG41o3q3gD4soA8LlMTXQ_m4GnD9xv9XXoDLPVCS-jGMsRhN79a9Aq6WkZc</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>1691015480</pqid></control><display><type>article</type><title>Low-Frequency Raman Fingerprints of Two-Dimensional Metal Dichalcogenide Layer Stacking Configurations</title><source>American Chemical Society Journals</source><creator>Puretzky, Alexander A ; Liang, Liangbo ; Li, Xufan ; Xiao, Kai ; Wang, Kai ; Mahjouri-Samani, Masoud ; Basile, Leonardo ; Idrobo, Juan Carlos ; Sumpter, Bobby G ; Meunier, Vincent ; Geohegan, David B</creator><creatorcontrib>Puretzky, Alexander A ; Liang, Liangbo ; Li, Xufan ; Xiao, Kai ; Wang, Kai ; Mahjouri-Samani, Masoud ; Basile, Leonardo ; Idrobo, Juan Carlos ; Sumpter, Bobby G ; Meunier, Vincent ; Geohegan, David B ; Oak Ridge National Laboratory (ORNL), Oak Ridge, TN (United States)</creatorcontrib><description>The tunable optoelectronic properties of stacked two-dimensional (2D) crystal monolayers are determined by their stacking orientation, order, and atomic registry. Atomic-resolution Z-contrast scanning transmission electron microscopy (AR-Z-STEM) and electron energy loss spectroscopy (EELS) can be used to determine the exact atomic registration between different layers, in few-layer 2D stacks; however, fast optical characterization techniques are essential for rapid development of the field. Here, using two- and three-layer MoSe2 and WSe2 crystals synthesized by chemical vapor deposition, we show that the generally unexplored low frequency (LF) Raman modes (<50 cm–1) that originate from interlayer vibrations can serve as fingerprints to characterize not only the number of layers, but also their stacking configurations. Ab initio calculations and group theory analysis corroborate the experimental assignments determined by AR-Z-STEM and show that the calculated LF mode fingerprints are related to the 2D crystal symmetries.</description><identifier>ISSN: 1936-0851</identifier><identifier>EISSN: 1936-086X</identifier><identifier>DOI: 10.1021/acsnano.5b01884</identifier><identifier>PMID: 25965878</identifier><language>eng</language><publisher>United States: American Chemical Society</publisher><subject>first-principles calculations ; low-frequency Raman spectroscopy ; MATERIALS SCIENCE ; stacking configurations ; transition metal dichalcogenides ; two-dimensional materials</subject><ispartof>ACS nano, 2015-06, Vol.9 (6), p.6333-6342</ispartof><rights>Copyright © American Chemical Society</rights><lds50>peer_reviewed</lds50><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-a467t-650460af50f836e724920642b4a4f22de0ea462c9490368ca8be2022cc6f1a403</citedby><cites>FETCH-LOGICAL-a467t-650460af50f836e724920642b4a4f22de0ea462c9490368ca8be2022cc6f1a403</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://pubs.acs.org/doi/pdf/10.1021/acsnano.5b01884$$EPDF$$P50$$Gacs$$H</linktopdf><linktohtml>$$Uhttps://pubs.acs.org/doi/10.1021/acsnano.5b01884$$EHTML$$P50$$Gacs$$H</linktohtml><link.rule.ids>230,314,780,784,885,2765,27076,27924,27925,56738,56788</link.rule.ids><backlink>$$Uhttps://www.ncbi.nlm.nih.gov/pubmed/25965878$$D View this record in MEDLINE/PubMed$$Hfree_for_read</backlink><backlink>$$Uhttps://www.osti.gov/servlets/purl/1193188$$D View this record in Osti.gov$$Hfree_for_read</backlink></links><search><creatorcontrib>Puretzky, Alexander A</creatorcontrib><creatorcontrib>Liang, Liangbo</creatorcontrib><creatorcontrib>Li, Xufan</creatorcontrib><creatorcontrib>Xiao, Kai</creatorcontrib><creatorcontrib>Wang, Kai</creatorcontrib><creatorcontrib>Mahjouri-Samani, Masoud</creatorcontrib><creatorcontrib>Basile, Leonardo</creatorcontrib><creatorcontrib>Idrobo, Juan Carlos</creatorcontrib><creatorcontrib>Sumpter, Bobby G</creatorcontrib><creatorcontrib>Meunier, Vincent</creatorcontrib><creatorcontrib>Geohegan, David B</creatorcontrib><creatorcontrib>Oak Ridge National Laboratory (ORNL), Oak Ridge, TN (United States)</creatorcontrib><title>Low-Frequency Raman Fingerprints of Two-Dimensional Metal Dichalcogenide Layer Stacking Configurations</title><title>ACS nano</title><addtitle>ACS Nano</addtitle><description>The tunable optoelectronic properties of stacked two-dimensional (2D) crystal monolayers are determined by their stacking orientation, order, and atomic registry. Atomic-resolution Z-contrast scanning transmission electron microscopy (AR-Z-STEM) and electron energy loss spectroscopy (EELS) can be used to determine the exact atomic registration between different layers, in few-layer 2D stacks; however, fast optical characterization techniques are essential for rapid development of the field. Here, using two- and three-layer MoSe2 and WSe2 crystals synthesized by chemical vapor deposition, we show that the generally unexplored low frequency (LF) Raman modes (<50 cm–1) that originate from interlayer vibrations can serve as fingerprints to characterize not only the number of layers, but also their stacking configurations. Ab initio calculations and group theory analysis corroborate the experimental assignments determined by AR-Z-STEM and show that the calculated LF mode fingerprints are related to the 2D crystal symmetries.</description><subject>first-principles calculations</subject><subject>low-frequency Raman spectroscopy</subject><subject>MATERIALS SCIENCE</subject><subject>stacking configurations</subject><subject>transition metal dichalcogenides</subject><subject>two-dimensional materials</subject><issn>1936-0851</issn><issn>1936-086X</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2015</creationdate><recordtype>article</recordtype><recordid>eNp1kU1rGzEURUVpaL667q4MXQXCxJKs0WiWxY7bgkOgTaA78Sw_OUpnpETSEPzvI2M3u2wkLc69oHMJ-cLoFaOcTcAkDz5cNSvKlBIfyAnrprKmSv79-PZu2DE5TemR0qZVrfxEjnnTyUa16oTYZXipFxGfR_RmW_2GAXy1cH6D8Sk6n1MVbHX3Euq5G9AnFzz01Q3mcs6deYDehA16t8ZqCVuM1Z8M5l-JV7PgrduMEXLJpHNyZKFP-Plwn5H7xfXd7Ge9vP3xa_Z9WYOQba5lQ4WkYBtq1VRiy0XHqRR8JUBYztdIsYDcdKKjU6kMqBVyyrkx0jIQdHpGvu17Q8pOJ-MymgcTvEeTNSs-iqUCXeyhpxjKv1PWg0sG-x48hjFpJjtGWSPUrm-yR00MKUW0ulgZIG41o3q3gD4soA8LlMTXQ_m4GnD9xv9XXoDLPVCS-jGMsRhN79a9Aq6WkZc</recordid><startdate>20150623</startdate><enddate>20150623</enddate><creator>Puretzky, Alexander A</creator><creator>Liang, Liangbo</creator><creator>Li, Xufan</creator><creator>Xiao, Kai</creator><creator>Wang, Kai</creator><creator>Mahjouri-Samani, Masoud</creator><creator>Basile, Leonardo</creator><creator>Idrobo, Juan Carlos</creator><creator>Sumpter, Bobby G</creator><creator>Meunier, Vincent</creator><creator>Geohegan, David B</creator><general>American Chemical Society</general><general>American Chemical Society (ACS)</general><scope>NPM</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7X8</scope><scope>OIOZB</scope><scope>OTOTI</scope></search><sort><creationdate>20150623</creationdate><title>Low-Frequency Raman Fingerprints of Two-Dimensional Metal Dichalcogenide Layer Stacking Configurations</title><author>Puretzky, Alexander A ; Liang, Liangbo ; Li, Xufan ; Xiao, Kai ; Wang, Kai ; Mahjouri-Samani, Masoud ; Basile, Leonardo ; Idrobo, Juan Carlos ; Sumpter, Bobby G ; Meunier, Vincent ; Geohegan, David B</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-a467t-650460af50f836e724920642b4a4f22de0ea462c9490368ca8be2022cc6f1a403</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2015</creationdate><topic>first-principles calculations</topic><topic>low-frequency Raman spectroscopy</topic><topic>MATERIALS SCIENCE</topic><topic>stacking configurations</topic><topic>transition metal dichalcogenides</topic><topic>two-dimensional materials</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Puretzky, Alexander A</creatorcontrib><creatorcontrib>Liang, Liangbo</creatorcontrib><creatorcontrib>Li, Xufan</creatorcontrib><creatorcontrib>Xiao, Kai</creatorcontrib><creatorcontrib>Wang, Kai</creatorcontrib><creatorcontrib>Mahjouri-Samani, Masoud</creatorcontrib><creatorcontrib>Basile, Leonardo</creatorcontrib><creatorcontrib>Idrobo, Juan Carlos</creatorcontrib><creatorcontrib>Sumpter, Bobby G</creatorcontrib><creatorcontrib>Meunier, Vincent</creatorcontrib><creatorcontrib>Geohegan, David B</creatorcontrib><creatorcontrib>Oak Ridge National Laboratory (ORNL), Oak Ridge, TN (United States)</creatorcontrib><collection>PubMed</collection><collection>CrossRef</collection><collection>MEDLINE - Academic</collection><collection>OSTI.GOV - Hybrid</collection><collection>OSTI.GOV</collection><jtitle>ACS nano</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Puretzky, Alexander A</au><au>Liang, Liangbo</au><au>Li, Xufan</au><au>Xiao, Kai</au><au>Wang, Kai</au><au>Mahjouri-Samani, Masoud</au><au>Basile, Leonardo</au><au>Idrobo, Juan Carlos</au><au>Sumpter, Bobby G</au><au>Meunier, Vincent</au><au>Geohegan, David B</au><aucorp>Oak Ridge National Laboratory (ORNL), Oak Ridge, TN (United States)</aucorp><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Low-Frequency Raman Fingerprints of Two-Dimensional Metal Dichalcogenide Layer Stacking Configurations</atitle><jtitle>ACS nano</jtitle><addtitle>ACS Nano</addtitle><date>2015-06-23</date><risdate>2015</risdate><volume>9</volume><issue>6</issue><spage>6333</spage><epage>6342</epage><pages>6333-6342</pages><issn>1936-0851</issn><eissn>1936-086X</eissn><abstract>The tunable optoelectronic properties of stacked two-dimensional (2D) crystal monolayers are determined by their stacking orientation, order, and atomic registry. Atomic-resolution Z-contrast scanning transmission electron microscopy (AR-Z-STEM) and electron energy loss spectroscopy (EELS) can be used to determine the exact atomic registration between different layers, in few-layer 2D stacks; however, fast optical characterization techniques are essential for rapid development of the field. Here, using two- and three-layer MoSe2 and WSe2 crystals synthesized by chemical vapor deposition, we show that the generally unexplored low frequency (LF) Raman modes (<50 cm–1) that originate from interlayer vibrations can serve as fingerprints to characterize not only the number of layers, but also their stacking configurations. Ab initio calculations and group theory analysis corroborate the experimental assignments determined by AR-Z-STEM and show that the calculated LF mode fingerprints are related to the 2D crystal symmetries.</abstract><cop>United States</cop><pub>American Chemical Society</pub><pmid>25965878</pmid><doi>10.1021/acsnano.5b01884</doi><tpages>10</tpages><oa>free_for_read</oa></addata></record> |
| fulltext | fulltext |
| identifier | ISSN: 1936-0851 |
| ispartof | ACS nano, 2015-06, Vol.9 (6), p.6333-6342 |
| issn | 1936-0851 1936-086X |
| language | eng |
| recordid | cdi_osti_scitechconnect_1193188 |
| source | American Chemical Society Journals |
| subjects | first-principles calculations low-frequency Raman spectroscopy MATERIALS SCIENCE stacking configurations transition metal dichalcogenides two-dimensional materials |
| title | Low-Frequency Raman Fingerprints of Two-Dimensional Metal Dichalcogenide Layer Stacking Configurations |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-12-22T10%3A59%3A48IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_osti_&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Low-Frequency%20Raman%20Fingerprints%20of%20Two-Dimensional%20Metal%20Dichalcogenide%20Layer%20Stacking%20Configurations&rft.jtitle=ACS%20nano&rft.au=Puretzky,%20Alexander%20A&rft.aucorp=Oak%20Ridge%20National%20Laboratory%20(ORNL),%20Oak%20Ridge,%20TN%20(United%20States)&rft.date=2015-06-23&rft.volume=9&rft.issue=6&rft.spage=6333&rft.epage=6342&rft.pages=6333-6342&rft.issn=1936-0851&rft.eissn=1936-086X&rft_id=info:doi/10.1021/acsnano.5b01884&rft_dat=%3Cproquest_osti_%3E1691015480%3C/proquest_osti_%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=1691015480&rft_id=info:pmid/25965878&rfr_iscdi=true |