Theory of epsilon-near-zero modes in ultrathin films

The physics of the epsilon-near-zero (ENZ) mode, which is supported by a nanolayer at the frequency where the dielectric permittivity vanishes, has recently been a subject of debate. In this Rapid Communication, we thoroughly investigate and clarify the physics of this mode, providing its main chara...

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Veröffentlicht in:Physical review. B, Condensed matter and materials physics Condensed matter and materials physics, 2015-03, Vol.91 (12), Article 121408
Hauptverfasser: Campione, Salvatore, Brener, Igal, Marquier, Francois
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container_title Physical review. B, Condensed matter and materials physics
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creator Campione, Salvatore
Brener, Igal
Marquier, Francois
description The physics of the epsilon-near-zero (ENZ) mode, which is supported by a nanolayer at the frequency where the dielectric permittivity vanishes, has recently been a subject of debate. In this Rapid Communication, we thoroughly investigate and clarify the physics of this mode, providing its main characteristics and its domain of existence. This understanding will benefit all the applications that rely on ENZ modes in semiconductor nanolayers, including directional perfect absorption, voltage-tunable devices, and ultrafast thermal emission.
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source American Physical Society Journals
subjects Condensed matter
Dielectric constant
Dielectrics
Nanostructure
Optics
Permittivity
Physics
Semiconductors
Thermal emission
Thin films
title Theory of epsilon-near-zero modes in ultrathin films
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