Nonlinear valley and spin currents from Fermi pocket anisotropy in 2D crystals

The controlled flow of spin and valley pseudospin is key to future electronics exploiting these internal degrees of freedom of carriers. Here, we discover a universal possibility for generating spin and valley currents by electric bias or temperature gradient only, which arises from the anisotropy o...

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Veröffentlicht in:	Physical review letters 2014-10, Vol.113 (15), p.156603-156603, Article 156603
Hauptverfasser:	Yu, Hongyi, Wu, Yue, Liu, Gui-Bin, Xu, Xiaodong, Yao, Wang
Format:	Artikel
Sprache:	eng
Schlagworte:	Anisotropy Bias Crystals Graphene Nonlinearity Spintronics Two dimensional Valleys
Online-Zugang:	Volltext
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