Evidence for a shallow Cu acceptor in Si from infrared spectroscopy and photoconductivity

Copper impurities affect optical and electronic properties in a diverse range of materials. Using IR spectroscopy, we provide evidence for a shallow Cu acceptor in Si. The observation of P sub(1/2) excitation lines indicates a Cu acceptor with a hole ionization energy of only 27 meV, which is shallo...

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Veröffentlicht in:Physical review. B, Condensed matter and materials physics Condensed matter and materials physics, 2014-10, Vol.90 (16), Article 165204
Hauptverfasser: Teklemichael, S. T., McCluskey, M. D., Buchowicz, G., Dubon, O. D., Haller, E. E.
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container_title Physical review. B, Condensed matter and materials physics
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McCluskey, M. D.
Buchowicz, G.
Dubon, O. D.
Haller, E. E.
description Copper impurities affect optical and electronic properties in a diverse range of materials. Using IR spectroscopy, we provide evidence for a shallow Cu acceptor in Si. The observation of P sub(1/2) excitation lines indicates a Cu acceptor with a hole ionization energy of only 27 meV, which is shallower than any of the group-III acceptors. The observed center has an IR spectrum that is characteristic of a hydrogenic acceptor. Variable-temperature Hall-effect measurements confirm this result. The observation of shallow, hydrogenic behavior is consistent with a universal level model, in which the Cu acceptor level is fixed relative to vacuum, irrespective of the host.
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source American Physical Society Journals
subjects Acceptors (electronic)
Condensed matter
Copper
Energy use
Infrared radiation
Infrared spectroscopy
Ionization
Optical properties
Silicon
title Evidence for a shallow Cu acceptor in Si from infrared spectroscopy and photoconductivity
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