Evidence for a shallow Cu acceptor in Si from infrared spectroscopy and photoconductivity
Copper impurities affect optical and electronic properties in a diverse range of materials. Using IR spectroscopy, we provide evidence for a shallow Cu acceptor in Si. The observation of P sub(1/2) excitation lines indicates a Cu acceptor with a hole ionization energy of only 27 meV, which is shallo...
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Veröffentlicht in: | Physical review. B, Condensed matter and materials physics Condensed matter and materials physics, 2014-10, Vol.90 (16), Article 165204 |
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container_title | Physical review. B, Condensed matter and materials physics |
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creator | Teklemichael, S. T. McCluskey, M. D. Buchowicz, G. Dubon, O. D. Haller, E. E. |
description | Copper impurities affect optical and electronic properties in a diverse range of materials. Using IR spectroscopy, we provide evidence for a shallow Cu acceptor in Si. The observation of P sub(1/2) excitation lines indicates a Cu acceptor with a hole ionization energy of only 27 meV, which is shallower than any of the group-III acceptors. The observed center has an IR spectrum that is characteristic of a hydrogenic acceptor. Variable-temperature Hall-effect measurements confirm this result. The observation of shallow, hydrogenic behavior is consistent with a universal level model, in which the Cu acceptor level is fixed relative to vacuum, irrespective of the host. |
doi_str_mv | 10.1103/PhysRevB.90.165204 |
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T. ; McCluskey, M. D. ; Buchowicz, G. ; Dubon, O. D. ; Haller, E. E.</creator><creatorcontrib>Teklemichael, S. T. ; McCluskey, M. D. ; Buchowicz, G. ; Dubon, O. D. ; Haller, E. E.</creatorcontrib><description>Copper impurities affect optical and electronic properties in a diverse range of materials. Using IR spectroscopy, we provide evidence for a shallow Cu acceptor in Si. The observation of P sub(1/2) excitation lines indicates a Cu acceptor with a hole ionization energy of only 27 meV, which is shallower than any of the group-III acceptors. The observed center has an IR spectrum that is characteristic of a hydrogenic acceptor. Variable-temperature Hall-effect measurements confirm this result. 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subjects | Acceptors (electronic) Condensed matter Copper Energy use Infrared radiation Infrared spectroscopy Ionization Optical properties Silicon |
title | Evidence for a shallow Cu acceptor in Si from infrared spectroscopy and photoconductivity |
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