Reversible control of Co magnetism by voltage-induced oxidation
We demonstrate that magnetic properties of ultrathin Co films adjacent to Gd2O3 gate oxides can be directly manipulated by voltage. The Co films can be reversibly changed from an optimally oxidized state with a strong perpendicular magnetic anisotropy to a metallic state with an in-plane magnetic an...
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| Veröffentlicht in: | Physical review letters 2014-12, Vol.113 (26), p.267202-267202, Article 267202 |
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| container_issue | 26 |
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| container_title | Physical review letters |
| container_volume | 113 |
| creator | Bi, Chong Liu, Yaohua Newhouse-Illige, T Xu, M Rosales, M Freeland, J W Mryasov, Oleg Zhang, Shufeng te Velthuis, S G E Wang, W G |
| description | We demonstrate that magnetic properties of ultrathin Co films adjacent to Gd2O3 gate oxides can be directly manipulated by voltage. The Co films can be reversibly changed from an optimally oxidized state with a strong perpendicular magnetic anisotropy to a metallic state with an in-plane magnetic anisotropy or to an oxidized state with nearly zero magnetization, depending on the polarity and time duration of the applied electric fields. Consequently, an unprecedentedly large change of magnetic anisotropy energy up to 0.73 erg/cm(2) has been realized in a nonvolatile manner using gate voltages of only a few volts. These results open a new route to achieve ultralow energy magnetization manipulation in spintronic devices. |
| doi_str_mv | 10.1103/physrevlett.113.267202 |
| format | Article |
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The Co films can be reversibly changed from an optimally oxidized state with a strong perpendicular magnetic anisotropy to a metallic state with an in-plane magnetic anisotropy or to an oxidized state with nearly zero magnetization, depending on the polarity and time duration of the applied electric fields. Consequently, an unprecedentedly large change of magnetic anisotropy energy up to 0.73 erg/cm(2) has been realized in a nonvolatile manner using gate voltages of only a few volts. These results open a new route to achieve ultralow energy magnetization manipulation in spintronic devices.</description><identifier>ISSN: 0031-9007</identifier><identifier>EISSN: 1079-7114</identifier><identifier>DOI: 10.1103/physrevlett.113.267202</identifier><identifier>PMID: 25615378</identifier><language>eng</language><publisher>United States: American Physical Society</publisher><subject>Cobalt ; Electric potential ; Gates ; Magnetic anisotropy ; Magnetization ; Oxides ; Polarity ; Voltage</subject><ispartof>Physical review letters, 2014-12, Vol.113 (26), p.267202-267202, Article 267202</ispartof><lds50>peer_reviewed</lds50><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c538t-b95e95e97a2d0b7f1e8a1b80cccfc2edf5b410168e47652a12f3405112a771b43</citedby><cites>FETCH-LOGICAL-c538t-b95e95e97a2d0b7f1e8a1b80cccfc2edf5b410168e47652a12f3405112a771b43</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>230,315,782,786,887,2878,2879,27931,27932</link.rule.ids><backlink>$$Uhttps://www.ncbi.nlm.nih.gov/pubmed/25615378$$D View this record in MEDLINE/PubMed$$Hfree_for_read</backlink><backlink>$$Uhttps://www.osti.gov/biblio/1179953$$D View this record in Osti.gov$$Hfree_for_read</backlink></links><search><creatorcontrib>Bi, Chong</creatorcontrib><creatorcontrib>Liu, Yaohua</creatorcontrib><creatorcontrib>Newhouse-Illige, T</creatorcontrib><creatorcontrib>Xu, M</creatorcontrib><creatorcontrib>Rosales, M</creatorcontrib><creatorcontrib>Freeland, J W</creatorcontrib><creatorcontrib>Mryasov, Oleg</creatorcontrib><creatorcontrib>Zhang, Shufeng</creatorcontrib><creatorcontrib>te Velthuis, S G E</creatorcontrib><creatorcontrib>Wang, W G</creatorcontrib><title>Reversible control of Co magnetism by voltage-induced oxidation</title><title>Physical review letters</title><addtitle>Phys Rev Lett</addtitle><description>We demonstrate that magnetic properties of ultrathin Co films adjacent to Gd2O3 gate oxides can be directly manipulated by voltage. The Co films can be reversibly changed from an optimally oxidized state with a strong perpendicular magnetic anisotropy to a metallic state with an in-plane magnetic anisotropy or to an oxidized state with nearly zero magnetization, depending on the polarity and time duration of the applied electric fields. Consequently, an unprecedentedly large change of magnetic anisotropy energy up to 0.73 erg/cm(2) has been realized in a nonvolatile manner using gate voltages of only a few volts. These results open a new route to achieve ultralow energy magnetization manipulation in spintronic devices.</description><subject>Cobalt</subject><subject>Electric potential</subject><subject>Gates</subject><subject>Magnetic anisotropy</subject><subject>Magnetization</subject><subject>Oxides</subject><subject>Polarity</subject><subject>Voltage</subject><issn>0031-9007</issn><issn>1079-7114</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2014</creationdate><recordtype>article</recordtype><recordid>eNqFkV1LwzAUhoMobk7_wiheedOZkzRNeyUy_IKBInod0vR0i7TNbLLh_r0ZU2-FAwcOz_l6X0KmQGcAlF-vVzs_4LbFEGKBz1guGWVHZAxUlqkEyI7JmFIOaUmpHJEz7z8opcDy4pSMmMhBcFmMyc0rbnHwtmoxMa4Pg2sT1yRzl3R62WOwvkuqXbJ1bdBLTG1fbwzWifuytQ7W9efkpNGtx4ufPCHv93dv88d08fzwNL9dpEbwIqRVKXAfUrOaVrIBLDRUBTXGNIZh3YgqAwp5gZnMBdPAGp5RAcC0lFBlfEIuD3OdD1Z5YwOaVTy4RxMUgCxLwSN0dYDWg_vcoA-qs95g2-oe3cYrKHh8PC4Q_6PxiowDz8qI5gfUDM5H0Ru1Hmynh50CqvZmqJdoRtRxEc2IBa4OZsTG6c-OTdVh_df2qz7_BsR2h4Y</recordid><startdate>20141230</startdate><enddate>20141230</enddate><creator>Bi, Chong</creator><creator>Liu, Yaohua</creator><creator>Newhouse-Illige, T</creator><creator>Xu, M</creator><creator>Rosales, M</creator><creator>Freeland, J W</creator><creator>Mryasov, Oleg</creator><creator>Zhang, Shufeng</creator><creator>te Velthuis, S G E</creator><creator>Wang, W G</creator><general>American Physical Society</general><scope>NPM</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7X8</scope><scope>7U5</scope><scope>8FD</scope><scope>H8D</scope><scope>L7M</scope><scope>OTOTI</scope></search><sort><creationdate>20141230</creationdate><title>Reversible control of Co magnetism by voltage-induced oxidation</title><author>Bi, Chong ; Liu, Yaohua ; Newhouse-Illige, T ; Xu, M ; Rosales, M ; Freeland, J W ; Mryasov, Oleg ; Zhang, Shufeng ; te Velthuis, S G E ; Wang, W G</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c538t-b95e95e97a2d0b7f1e8a1b80cccfc2edf5b410168e47652a12f3405112a771b43</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2014</creationdate><topic>Cobalt</topic><topic>Electric potential</topic><topic>Gates</topic><topic>Magnetic anisotropy</topic><topic>Magnetization</topic><topic>Oxides</topic><topic>Polarity</topic><topic>Voltage</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Bi, Chong</creatorcontrib><creatorcontrib>Liu, Yaohua</creatorcontrib><creatorcontrib>Newhouse-Illige, T</creatorcontrib><creatorcontrib>Xu, M</creatorcontrib><creatorcontrib>Rosales, M</creatorcontrib><creatorcontrib>Freeland, J W</creatorcontrib><creatorcontrib>Mryasov, Oleg</creatorcontrib><creatorcontrib>Zhang, Shufeng</creatorcontrib><creatorcontrib>te Velthuis, S G E</creatorcontrib><creatorcontrib>Wang, W G</creatorcontrib><collection>PubMed</collection><collection>CrossRef</collection><collection>MEDLINE - Academic</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>Technology Research Database</collection><collection>Aerospace Database</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>OSTI.GOV</collection><jtitle>Physical review letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Bi, Chong</au><au>Liu, Yaohua</au><au>Newhouse-Illige, T</au><au>Xu, M</au><au>Rosales, M</au><au>Freeland, J W</au><au>Mryasov, Oleg</au><au>Zhang, Shufeng</au><au>te Velthuis, S G E</au><au>Wang, W G</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Reversible control of Co magnetism by voltage-induced oxidation</atitle><jtitle>Physical review letters</jtitle><addtitle>Phys Rev Lett</addtitle><date>2014-12-30</date><risdate>2014</risdate><volume>113</volume><issue>26</issue><spage>267202</spage><epage>267202</epage><pages>267202-267202</pages><artnum>267202</artnum><issn>0031-9007</issn><eissn>1079-7114</eissn><abstract>We demonstrate that magnetic properties of ultrathin Co films adjacent to Gd2O3 gate oxides can be directly manipulated by voltage. The Co films can be reversibly changed from an optimally oxidized state with a strong perpendicular magnetic anisotropy to a metallic state with an in-plane magnetic anisotropy or to an oxidized state with nearly zero magnetization, depending on the polarity and time duration of the applied electric fields. Consequently, an unprecedentedly large change of magnetic anisotropy energy up to 0.73 erg/cm(2) has been realized in a nonvolatile manner using gate voltages of only a few volts. These results open a new route to achieve ultralow energy magnetization manipulation in spintronic devices.</abstract><cop>United States</cop><pub>American Physical Society</pub><pmid>25615378</pmid><doi>10.1103/physrevlett.113.267202</doi><tpages>1</tpages><oa>free_for_read</oa></addata></record> |
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| identifier | ISSN: 0031-9007 |
| ispartof | Physical review letters, 2014-12, Vol.113 (26), p.267202-267202, Article 267202 |
| issn | 0031-9007 1079-7114 |
| language | eng |
| recordid | cdi_osti_scitechconnect_1179953 |
| source | American Physical Society Journals |
| subjects | Cobalt Electric potential Gates Magnetic anisotropy Magnetization Oxides Polarity Voltage |
| title | Reversible control of Co magnetism by voltage-induced oxidation |
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