Storage of Electrical Information in Metal-Organic-Framework Memristors
Single crystals of a cyclodextrin‐based metal–organic framework (MOF) infused with an ionic electrolyte and flanked by silver electrodes act as memristors. They can be electrically switched between low and high conductivity states that persist even in the absence of an applied voltage. In this way,...
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Veröffentlicht in: | Angewandte Chemie (International ed.) 2014-04, Vol.53 (17), p.4437-4441 |
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description | Single crystals of a cyclodextrin‐based metal–organic framework (MOF) infused with an ionic electrolyte and flanked by silver electrodes act as memristors. They can be electrically switched between low and high conductivity states that persist even in the absence of an applied voltage. In this way, these small blocks of nanoporous sugar function as a non‐volatile RRAM memory elements that can be repeatedly read, erased, and re‐written. These properties derive from ionic current within the MOF and the deposition of nanometer‐thin passivating layers at the anode flanking the MOF crystal. The observed phenomena are crucially dependent on the sub‐nanometer widths of the channels in the MOF, allowing the passage of only smaller ions. Conversely, with the electrolyte present but no MOF, there are no memristance or memory effects.
Memories are forever: The sub‐nanometer pore size that exists in a metal–organic framework allows electrical information to be written, read, and re‐written when that MOF is infiltrated with an ionic electrolyte. |
doi_str_mv | 10.1002/anie.201309642 |
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Memories are forever: The sub‐nanometer pore size that exists in a metal–organic framework allows electrical information to be written, read, and re‐written when that MOF is infiltrated with an ionic electrolyte.</description><edition>International ed. in English</edition><identifier>ISSN: 1433-7851</identifier><identifier>EISSN: 1521-3773</identifier><identifier>DOI: 10.1002/anie.201309642</identifier><identifier>PMID: 24633993</identifier><identifier>CODEN: ACIEAY</identifier><language>eng</language><publisher>Weinheim: WILEY-VCH Verlag</publisher><subject>catalysis (homogeneous), solar (photovoltaic), bio-inspired, charge transport, mesostructured materials, materials and chemistry by design, synthesis (novel materials), synthesis (self-assembly) ; Channels ; Electric potential ; Electrodes ; Electrolytes ; Memory devices ; memristors ; Metal-organic frameworks ; Nanostructure ; negative differential resistance ; non-volatile memory ; resistive random access memory ; Resistivity ; Resistors ; Silver</subject><ispartof>Angewandte Chemie (International ed.), 2014-04, Vol.53 (17), p.4437-4441</ispartof><rights>2014 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim</rights><rights>2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.</rights><rights>2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c5742-51acfee404fb623ec654cc83e191209ffdbadd654a6560fe1950b72db0d9a99a3</citedby><cites>FETCH-LOGICAL-c5742-51acfee404fb623ec654cc83e191209ffdbadd654a6560fe1950b72db0d9a99a3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://onlinelibrary.wiley.com/doi/pdf/10.1002%2Fanie.201309642$$EPDF$$P50$$Gwiley$$H</linktopdf><linktohtml>$$Uhttps://onlinelibrary.wiley.com/doi/full/10.1002%2Fanie.201309642$$EHTML$$P50$$Gwiley$$H</linktohtml><link.rule.ids>230,314,776,780,881,1411,27901,27902,45550,45551</link.rule.ids><backlink>$$Uhttps://www.ncbi.nlm.nih.gov/pubmed/24633993$$D View this record in MEDLINE/PubMed$$Hfree_for_read</backlink><backlink>$$Uhttps://www.osti.gov/biblio/1168009$$D View this record in Osti.gov$$Hfree_for_read</backlink></links><search><creatorcontrib>Yoon, Seok Min</creatorcontrib><creatorcontrib>Warren, Scott C.</creatorcontrib><creatorcontrib>Grzybowski, Bartosz A.</creatorcontrib><creatorcontrib>Energy Frontier Research Centers (EFRC)</creatorcontrib><creatorcontrib>Center for Bio-Inspired Energy Science (CBES)</creatorcontrib><title>Storage of Electrical Information in Metal-Organic-Framework Memristors</title><title>Angewandte Chemie (International ed.)</title><addtitle>Angew. Chem. Int. Ed</addtitle><description>Single crystals of a cyclodextrin‐based metal–organic framework (MOF) infused with an ionic electrolyte and flanked by silver electrodes act as memristors. They can be electrically switched between low and high conductivity states that persist even in the absence of an applied voltage. In this way, these small blocks of nanoporous sugar function as a non‐volatile RRAM memory elements that can be repeatedly read, erased, and re‐written. These properties derive from ionic current within the MOF and the deposition of nanometer‐thin passivating layers at the anode flanking the MOF crystal. The observed phenomena are crucially dependent on the sub‐nanometer widths of the channels in the MOF, allowing the passage of only smaller ions. Conversely, with the electrolyte present but no MOF, there are no memristance or memory effects.
Memories are forever: The sub‐nanometer pore size that exists in a metal–organic framework allows electrical information to be written, read, and re‐written when that MOF is infiltrated with an ionic electrolyte.</description><subject>catalysis (homogeneous), solar (photovoltaic), bio-inspired, charge transport, mesostructured materials, materials and chemistry by design, synthesis (novel materials), synthesis (self-assembly)</subject><subject>Channels</subject><subject>Electric potential</subject><subject>Electrodes</subject><subject>Electrolytes</subject><subject>Memory devices</subject><subject>memristors</subject><subject>Metal-organic frameworks</subject><subject>Nanostructure</subject><subject>negative differential resistance</subject><subject>non-volatile memory</subject><subject>resistive random access memory</subject><subject>Resistivity</subject><subject>Resistors</subject><subject>Silver</subject><issn>1433-7851</issn><issn>1521-3773</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2014</creationdate><recordtype>article</recordtype><recordid>eNqFkU1v1DAURS0EoqWwZYki2LDJ4G_Hy1JNhxHDdEEREhvLcZ6L2yQudkal_x6PUkaITVe2ns49ftZF6DXBC4Ix_WDHAAuKCcNacvoEHRNBSc2UYk_LnTNWq0aQI_Qi5-vCNw2Wz9ER5ZIxrdkxWn2dYrJXUEVfLXtwUwrO9tV69DENdgpxrMJYfYHJ9vVFuirPufo82QHuYrop8yGFXAz5JXrmbZ_h1cN5gr6dLy_PPtWbi9X67HRTO6E4rQWxzgNwzH0rKQMnBXeuYUA0oVh737W268rQSiGxL2OBW0W7Fnfaam3ZCXo7e2OegskuTOB-ujiOZXVDiGww1gV6P0O3Kf7aQZ7MELKDvrcjxF02RGGCCaeCP44K0khKlN5b3_2HXsddGstv95RistFcFGoxUy7FnBN4c5vCYNO9IdjsKzP7ysyhshJ486DdtQN0B_xvRwXQM3AXerh_RGdOt-vlv_J6zpaW4Pcha9ONkYopYb5vV2b7cfNjQy8b85n9AbsYsCI</recordid><startdate>20140422</startdate><enddate>20140422</enddate><creator>Yoon, Seok Min</creator><creator>Warren, Scott C.</creator><creator>Grzybowski, Bartosz A.</creator><general>WILEY-VCH Verlag</general><general>WILEY‐VCH Verlag</general><general>Wiley Subscription Services, Inc</general><general>Wiley</general><scope>BSCLL</scope><scope>NPM</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7TM</scope><scope>K9.</scope><scope>7X8</scope><scope>7SP</scope><scope>7SR</scope><scope>8BQ</scope><scope>8FD</scope><scope>JG9</scope><scope>L7M</scope><scope>OTOTI</scope></search><sort><creationdate>20140422</creationdate><title>Storage of Electrical Information in Metal-Organic-Framework Memristors</title><author>Yoon, Seok Min ; Warren, Scott C. ; Grzybowski, Bartosz A.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c5742-51acfee404fb623ec654cc83e191209ffdbadd654a6560fe1950b72db0d9a99a3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2014</creationdate><topic>catalysis (homogeneous), solar (photovoltaic), bio-inspired, charge transport, mesostructured materials, materials and chemistry by design, synthesis (novel materials), synthesis (self-assembly)</topic><topic>Channels</topic><topic>Electric potential</topic><topic>Electrodes</topic><topic>Electrolytes</topic><topic>Memory devices</topic><topic>memristors</topic><topic>Metal-organic frameworks</topic><topic>Nanostructure</topic><topic>negative differential resistance</topic><topic>non-volatile memory</topic><topic>resistive random access memory</topic><topic>Resistivity</topic><topic>Resistors</topic><topic>Silver</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Yoon, Seok Min</creatorcontrib><creatorcontrib>Warren, Scott C.</creatorcontrib><creatorcontrib>Grzybowski, Bartosz A.</creatorcontrib><creatorcontrib>Energy Frontier Research Centers (EFRC)</creatorcontrib><creatorcontrib>Center for Bio-Inspired Energy Science (CBES)</creatorcontrib><collection>Istex</collection><collection>PubMed</collection><collection>CrossRef</collection><collection>Nucleic Acids Abstracts</collection><collection>ProQuest Health & Medical Complete (Alumni)</collection><collection>MEDLINE - Academic</collection><collection>Electronics & Communications Abstracts</collection><collection>Engineered Materials Abstracts</collection><collection>METADEX</collection><collection>Technology Research Database</collection><collection>Materials Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>OSTI.GOV</collection><jtitle>Angewandte Chemie (International ed.)</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Yoon, Seok Min</au><au>Warren, Scott C.</au><au>Grzybowski, Bartosz A.</au><aucorp>Energy Frontier Research Centers (EFRC)</aucorp><aucorp>Center for Bio-Inspired Energy Science (CBES)</aucorp><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Storage of Electrical Information in Metal-Organic-Framework Memristors</atitle><jtitle>Angewandte Chemie (International ed.)</jtitle><addtitle>Angew. Chem. Int. Ed</addtitle><date>2014-04-22</date><risdate>2014</risdate><volume>53</volume><issue>17</issue><spage>4437</spage><epage>4441</epage><pages>4437-4441</pages><issn>1433-7851</issn><eissn>1521-3773</eissn><coden>ACIEAY</coden><abstract>Single crystals of a cyclodextrin‐based metal–organic framework (MOF) infused with an ionic electrolyte and flanked by silver electrodes act as memristors. They can be electrically switched between low and high conductivity states that persist even in the absence of an applied voltage. In this way, these small blocks of nanoporous sugar function as a non‐volatile RRAM memory elements that can be repeatedly read, erased, and re‐written. These properties derive from ionic current within the MOF and the deposition of nanometer‐thin passivating layers at the anode flanking the MOF crystal. The observed phenomena are crucially dependent on the sub‐nanometer widths of the channels in the MOF, allowing the passage of only smaller ions. Conversely, with the electrolyte present but no MOF, there are no memristance or memory effects.
Memories are forever: The sub‐nanometer pore size that exists in a metal–organic framework allows electrical information to be written, read, and re‐written when that MOF is infiltrated with an ionic electrolyte.</abstract><cop>Weinheim</cop><pub>WILEY-VCH Verlag</pub><pmid>24633993</pmid><doi>10.1002/anie.201309642</doi><tpages>5</tpages><edition>International ed. in English</edition></addata></record> |
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subjects | catalysis (homogeneous), solar (photovoltaic), bio-inspired, charge transport, mesostructured materials, materials and chemistry by design, synthesis (novel materials), synthesis (self-assembly) Channels Electric potential Electrodes Electrolytes Memory devices memristors Metal-organic frameworks Nanostructure negative differential resistance non-volatile memory resistive random access memory Resistivity Resistors Silver |
title | Storage of Electrical Information in Metal-Organic-Framework Memristors |
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