Ion-luminescence properties of GaN films being developed for IPEM

Radiation effects microscopy (REM) for the next generation integrated circuits (ICs) will require GeV ions both to provide high ionization and to penetrate the thick overlayers in present day ICs. These ion beams can be provided by only a few cyclotrons in the world. Since it is extremely hard to fo...

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Veröffentlicht in:	Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms Beam interactions with materials and atoms, 2008-04, Vol.266 (8), p.1294-1299
Hauptverfasser:	Rossi, P., Doyle, B.L., Vizkelethy, G., McDaniel, F.D., Knapp, J., Jauregui, H., Villone, J.
Format:	Artikel
Sprache:	eng
Schlagworte:	Ion beam analysis Ion photon emission microscopy Ion-luminescence Phosphors
Online-Zugang:	Volltext
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