Inducing an incipient terahertz finite plasmonic crystal in coupled two dimensional plasmonic cavities

We measured a change in the current transport of an antenna-coupled, multigate, GaAs/AlGaAs field-effect transistor when terahertz electromagnetic waves irradiated the transistor and attribute the change to bolometric heating of the electrons in the two dimensional electron channel. The observed ter...

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Veröffentlicht in:Physical review letters 2012-09, Vol.109 (12), p.126803-126803, Article 126803
Hauptverfasser: Dyer, G C, Aizin, G R, Preu, S, Vinh, N Q, Allen, S J, Reno, J L, Shaner, E A
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container_end_page 126803
container_issue 12
container_start_page 126803
container_title Physical review letters
container_volume 109
creator Dyer, G C
Aizin, G R
Preu, S
Vinh, N Q
Allen, S J
Reno, J L
Shaner, E A
description We measured a change in the current transport of an antenna-coupled, multigate, GaAs/AlGaAs field-effect transistor when terahertz electromagnetic waves irradiated the transistor and attribute the change to bolometric heating of the electrons in the two dimensional electron channel. The observed terahertz absorption spectrum indicates coherence between plasmons excited under adjacent biased device gates. The experimental results agree quantitatively with a theoretical model we developed that is based on a generalized plasmonic transmission line formalism and describes an evolution of the plasmonic spectrum with increasing electron density modulation from homogeneous to the crystal limit. These results demonstrate an electronically induced and dynamically tunable plasmonic band structure.
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title Inducing an incipient terahertz finite plasmonic crystal in coupled two dimensional plasmonic cavities
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