Effect of gadolinium adatoms on the transport properties of graphene
The electrical transport properties of graphene doped with gadolinium (Gd) adatoms have been measured. The gate voltage dependence of the conductivity shows that Gd produces n doping of graphene. The charged Gd ions act as scattering centers, lowering the sample mobility for both electrons and holes...
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Veröffentlicht in: | Physical review. B, Condensed matter and materials physics Condensed matter and materials physics, 2012-08, Vol.86 (7), Article 075433 |
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container_title | Physical review. B, Condensed matter and materials physics |
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creator | Alemani, M. Barfuss, A. Geng, B. Girit, C. Reisenauer, P. Crommie, M. F. Wang, F. Zettl, A. Hellman, F. |
description | The electrical transport properties of graphene doped with gadolinium (Gd) adatoms have been measured. The gate voltage dependence of the conductivity shows that Gd produces n doping of graphene. The charged Gd ions act as scattering centers, lowering the sample mobility for both electrons and holes. The doping efficiency of Gd at 77 K reproduces theoretical predictions (0.7 electron per Gd adatom). On raising the sample temperature to even 150 K, clustering effects are observed and substantially modify the transport. |
doi_str_mv | 10.1103/PhysRevB.86.075433 |
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fullrecord | <record><control><sourceid>proquest_osti_</sourceid><recordid>TN_cdi_osti_scitechconnect_1103112</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>1709730935</sourcerecordid><originalsourceid>FETCH-LOGICAL-c351t-bd5d4cf1d639d1c499a28d5802d60d58b7e760ee52560c8a44a90afe01df84443</originalsourceid><addsrcrecordid>eNo1kE1LxDAQhoMouK7-AU_Fk5eukyZpm6Ou6wcsKKLgLWSTqa20TU2ywv5761ZP7xyeeZl5CDmnsKAU2NVzvQsv-H2zKPMFFIIzdkBmVAhIMybeD8cZZJkCzegxOQnhE4ByybMZuV1VFZqYuCr50Na1Td9su0RbHV0XEtcnscYket2HwfmYDN4N6GODYb_h9VBjj6fkqNJtwLO_nJO3u9Xr8iFdP90_Lq_XqWGCxnRjheWmojZn0lLDpdRZaUUJmc1hzE2BRQ6IIhM5mFJzriXoCoHaquScszm5mHpdiI0KpoloauP6fvxA_XqgNBuhywkab_3aYoiqa4LBttU9um1QtABZMJBMjGg2oca7EDxWavBNp_1OUdj3qX-vqszV5JX9AGE0bOc</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>1709730935</pqid></control><display><type>article</type><title>Effect of gadolinium adatoms on the transport properties of graphene</title><source>American Physical Society Journals</source><creator>Alemani, M. ; Barfuss, A. ; Geng, B. ; Girit, C. ; Reisenauer, P. ; Crommie, M. F. ; Wang, F. ; Zettl, A. ; Hellman, F.</creator><creatorcontrib>Alemani, M. ; Barfuss, A. ; Geng, B. ; Girit, C. ; Reisenauer, P. ; Crommie, M. F. ; Wang, F. ; Zettl, A. ; Hellman, F.</creatorcontrib><description>The electrical transport properties of graphene doped with gadolinium (Gd) adatoms have been measured. The gate voltage dependence of the conductivity shows that Gd produces n doping of graphene. The charged Gd ions act as scattering centers, lowering the sample mobility for both electrons and holes. The doping efficiency of Gd at 77 K reproduces theoretical predictions (0.7 electron per Gd adatom). On raising the sample temperature to even 150 K, clustering effects are observed and substantially modify the transport.</description><identifier>ISSN: 1098-0121</identifier><identifier>EISSN: 1550-235X</identifier><identifier>DOI: 10.1103/PhysRevB.86.075433</identifier><language>eng</language><publisher>United States: American Physical Society</publisher><subject>Condensed matter ; Doping ; Electric potential ; Gadolinium ; Graphene ; Resistivity ; Transport properties ; Voltage</subject><ispartof>Physical review. B, Condensed matter and materials physics, 2012-08, Vol.86 (7), Article 075433</ispartof><lds50>peer_reviewed</lds50><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c351t-bd5d4cf1d639d1c499a28d5802d60d58b7e760ee52560c8a44a90afe01df84443</citedby><cites>FETCH-LOGICAL-c351t-bd5d4cf1d639d1c499a28d5802d60d58b7e760ee52560c8a44a90afe01df84443</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>230,314,776,780,881,2863,2864,27901,27902</link.rule.ids><backlink>$$Uhttps://www.osti.gov/biblio/1103112$$D View this record in Osti.gov$$Hfree_for_read</backlink></links><search><creatorcontrib>Alemani, M.</creatorcontrib><creatorcontrib>Barfuss, A.</creatorcontrib><creatorcontrib>Geng, B.</creatorcontrib><creatorcontrib>Girit, C.</creatorcontrib><creatorcontrib>Reisenauer, P.</creatorcontrib><creatorcontrib>Crommie, M. F.</creatorcontrib><creatorcontrib>Wang, F.</creatorcontrib><creatorcontrib>Zettl, A.</creatorcontrib><creatorcontrib>Hellman, F.</creatorcontrib><title>Effect of gadolinium adatoms on the transport properties of graphene</title><title>Physical review. B, Condensed matter and materials physics</title><description>The electrical transport properties of graphene doped with gadolinium (Gd) adatoms have been measured. The gate voltage dependence of the conductivity shows that Gd produces n doping of graphene. The charged Gd ions act as scattering centers, lowering the sample mobility for both electrons and holes. The doping efficiency of Gd at 77 K reproduces theoretical predictions (0.7 electron per Gd adatom). On raising the sample temperature to even 150 K, clustering effects are observed and substantially modify the transport.</description><subject>Condensed matter</subject><subject>Doping</subject><subject>Electric potential</subject><subject>Gadolinium</subject><subject>Graphene</subject><subject>Resistivity</subject><subject>Transport properties</subject><subject>Voltage</subject><issn>1098-0121</issn><issn>1550-235X</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2012</creationdate><recordtype>article</recordtype><recordid>eNo1kE1LxDAQhoMouK7-AU_Fk5eukyZpm6Ou6wcsKKLgLWSTqa20TU2ywv5761ZP7xyeeZl5CDmnsKAU2NVzvQsv-H2zKPMFFIIzdkBmVAhIMybeD8cZZJkCzegxOQnhE4ByybMZuV1VFZqYuCr50Na1Td9su0RbHV0XEtcnscYket2HwfmYDN4N6GODYb_h9VBjj6fkqNJtwLO_nJO3u9Xr8iFdP90_Lq_XqWGCxnRjheWmojZn0lLDpdRZaUUJmc1hzE2BRQ6IIhM5mFJzriXoCoHaquScszm5mHpdiI0KpoloauP6fvxA_XqgNBuhywkab_3aYoiqa4LBttU9um1QtABZMJBMjGg2oca7EDxWavBNp_1OUdj3qX-vqszV5JX9AGE0bOc</recordid><startdate>20120814</startdate><enddate>20120814</enddate><creator>Alemani, M.</creator><creator>Barfuss, A.</creator><creator>Geng, B.</creator><creator>Girit, C.</creator><creator>Reisenauer, P.</creator><creator>Crommie, M. F.</creator><creator>Wang, F.</creator><creator>Zettl, A.</creator><creator>Hellman, F.</creator><general>American Physical Society</general><scope>AAYXX</scope><scope>CITATION</scope><scope>7U5</scope><scope>8FD</scope><scope>H8D</scope><scope>L7M</scope><scope>OTOTI</scope></search><sort><creationdate>20120814</creationdate><title>Effect of gadolinium adatoms on the transport properties of graphene</title><author>Alemani, M. ; Barfuss, A. ; Geng, B. ; Girit, C. ; Reisenauer, P. ; Crommie, M. F. ; Wang, F. ; Zettl, A. ; Hellman, F.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c351t-bd5d4cf1d639d1c499a28d5802d60d58b7e760ee52560c8a44a90afe01df84443</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2012</creationdate><topic>Condensed matter</topic><topic>Doping</topic><topic>Electric potential</topic><topic>Gadolinium</topic><topic>Graphene</topic><topic>Resistivity</topic><topic>Transport properties</topic><topic>Voltage</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Alemani, M.</creatorcontrib><creatorcontrib>Barfuss, A.</creatorcontrib><creatorcontrib>Geng, B.</creatorcontrib><creatorcontrib>Girit, C.</creatorcontrib><creatorcontrib>Reisenauer, P.</creatorcontrib><creatorcontrib>Crommie, M. F.</creatorcontrib><creatorcontrib>Wang, F.</creatorcontrib><creatorcontrib>Zettl, A.</creatorcontrib><creatorcontrib>Hellman, F.</creatorcontrib><collection>CrossRef</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>Technology Research Database</collection><collection>Aerospace Database</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>OSTI.GOV</collection><jtitle>Physical review. B, Condensed matter and materials physics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Alemani, M.</au><au>Barfuss, A.</au><au>Geng, B.</au><au>Girit, C.</au><au>Reisenauer, P.</au><au>Crommie, M. F.</au><au>Wang, F.</au><au>Zettl, A.</au><au>Hellman, F.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Effect of gadolinium adatoms on the transport properties of graphene</atitle><jtitle>Physical review. B, Condensed matter and materials physics</jtitle><date>2012-08-14</date><risdate>2012</risdate><volume>86</volume><issue>7</issue><artnum>075433</artnum><issn>1098-0121</issn><eissn>1550-235X</eissn><abstract>The electrical transport properties of graphene doped with gadolinium (Gd) adatoms have been measured. The gate voltage dependence of the conductivity shows that Gd produces n doping of graphene. The charged Gd ions act as scattering centers, lowering the sample mobility for both electrons and holes. The doping efficiency of Gd at 77 K reproduces theoretical predictions (0.7 electron per Gd adatom). On raising the sample temperature to even 150 K, clustering effects are observed and substantially modify the transport.</abstract><cop>United States</cop><pub>American Physical Society</pub><doi>10.1103/PhysRevB.86.075433</doi><oa>free_for_read</oa></addata></record> |
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subjects | Condensed matter Doping Electric potential Gadolinium Graphene Resistivity Transport properties Voltage |
title | Effect of gadolinium adatoms on the transport properties of graphene |
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