Polarization-driven topological insulator transition in a GaN/InN/GaN quantum well

Topological insulator (TI) states have been demonstrated in materials with a narrow gap and large spin-orbit interactions (SOI). Here we demonstrate that nanoscale engineering can also give rise to a TI state, even in conventional semiconductors with a sizable gap and small SOI. Based on advanced fi...

Ausführliche Beschreibung

Gespeichert in:

Bibliographische Detailangaben
Veröffentlicht in:	Physical review letters 2012-11, Vol.109 (18), p.186803-186803, Article 186803
Hauptverfasser:	Miao, M S, Yan, Q, Van de Walle, C G, Lou, W K, Li, L L, Chang, K
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!

container_end_page	186803
container_issue	18
container_start_page	186803
container_title	Physical review letters
container_volume	109
creator	Miao, M S Yan, Q Van de Walle, C G Lou, W K Li, L L Chang, K
description	Topological insulator (TI) states have been demonstrated in materials with a narrow gap and large spin-orbit interactions (SOI). Here we demonstrate that nanoscale engineering can also give rise to a TI state, even in conventional semiconductors with a sizable gap and small SOI. Based on advanced first-principles calculations combined with an effective low-energy k · p Hamiltonian, we show that the intrinsic polarization of materials can be utilized to simultaneously reduce the energy gap and enhance the SOI, driving the system to a TI state. The proposed system consists of ultrathin InN layers embedded into GaN, a layer structure that is experimentally achievable.
doi_str_mv	10.1103/PhysRevLett.109.186803
format	Article
fullrecord	<record><control><sourceid>proquest_osti_</sourceid><recordid>TN_cdi_osti_scitechconnect_1101704</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>1237503381</sourcerecordid><originalsourceid>FETCH-LOGICAL-c338t-f8eb962edd4f972ac0f5f7a8d46d5f2138569c31794d5a7f7dcd535a86384a973</originalsourceid><addsrcrecordid>eNpNkFFLwzAUhYMoOqd_QYpPvnTLbdomeRTRORg6hj6XLEk10iUzSZX56410ik8XDt8593AQugA8AcBkunzdhZX-WOgYJ4D5BFjNMDlAI8CU5xSgPEQjjAnkHGN6gk5DeMMYQ1GzY3RSkAIqAjBCq6XrhDdfIhpnc-XNh7ZZdFvXuRcjRZcZG_pOROez6IUN5odLYiaymXiYzu3DNN3svRc29pvsU3fdGTpqRRf0-f6O0fPd7dPNfb54nM1vrhe5JITFvGV6zetCK1W2nBZC4rZqqWCqrFXVFkBYVXNJgPJSVYK2VElVkUqwmrBScErG6HLIdSGaJkgTtXyVzlotY5NGAorLBF0N0Na7916H2GxMkKmlsNr1oYGC0AqnQpDQekCldyF43TZbbzbC7xrAP3mk-Td60ngzjJ6MF_sf_Xqj1Z_td2XyDUwsgGk</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>1237503381</pqid></control><display><type>article</type><title>Polarization-driven topological insulator transition in a GaN/InN/GaN quantum well</title><source>American Physical Society Journals</source><creator>Miao, M S ; Yan, Q ; Van de Walle, C G ; Lou, W K ; Li, L L ; Chang, K</creator><creatorcontrib>Miao, M S ; Yan, Q ; Van de Walle, C G ; Lou, W K ; Li, L L ; Chang, K</creatorcontrib><description>Topological insulator (TI) states have been demonstrated in materials with a narrow gap and large spin-orbit interactions (SOI). Here we demonstrate that nanoscale engineering can also give rise to a TI state, even in conventional semiconductors with a sizable gap and small SOI. Based on advanced first-principles calculations combined with an effective low-energy k · p Hamiltonian, we show that the intrinsic polarization of materials can be utilized to simultaneously reduce the energy gap and enhance the SOI, driving the system to a TI state. The proposed system consists of ultrathin InN layers embedded into GaN, a layer structure that is experimentally achievable.</description><identifier>ISSN: 0031-9007</identifier><identifier>EISSN: 1079-7114</identifier><identifier>DOI: 10.1103/PhysRevLett.109.186803</identifier><identifier>PMID: 23215311</identifier><language>eng</language><publisher>United States: American Physical Society</publisher><ispartof>Physical review letters, 2012-11, Vol.109 (18), p.186803-186803, Article 186803</ispartof><lds50>peer_reviewed</lds50><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c338t-f8eb962edd4f972ac0f5f7a8d46d5f2138569c31794d5a7f7dcd535a86384a973</citedby><cites>FETCH-LOGICAL-c338t-f8eb962edd4f972ac0f5f7a8d46d5f2138569c31794d5a7f7dcd535a86384a973</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>230,314,776,780,881,2863,2864,27901,27902</link.rule.ids><backlink>$$Uhttps://www.ncbi.nlm.nih.gov/pubmed/23215311$$D View this record in MEDLINE/PubMed$$Hfree_for_read</backlink><backlink>$$Uhttps://www.osti.gov/biblio/1101704$$D View this record in Osti.gov$$Hfree_for_read</backlink></links><search><creatorcontrib>Miao, M S</creatorcontrib><creatorcontrib>Yan, Q</creatorcontrib><creatorcontrib>Van de Walle, C G</creatorcontrib><creatorcontrib>Lou, W K</creatorcontrib><creatorcontrib>Li, L L</creatorcontrib><creatorcontrib>Chang, K</creatorcontrib><title>Polarization-driven topological insulator transition in a GaN/InN/GaN quantum well</title><title>Physical review letters</title><addtitle>Phys Rev Lett</addtitle><description>Topological insulator (TI) states have been demonstrated in materials with a narrow gap and large spin-orbit interactions (SOI). Here we demonstrate that nanoscale engineering can also give rise to a TI state, even in conventional semiconductors with a sizable gap and small SOI. Based on advanced first-principles calculations combined with an effective low-energy k · p Hamiltonian, we show that the intrinsic polarization of materials can be utilized to simultaneously reduce the energy gap and enhance the SOI, driving the system to a TI state. The proposed system consists of ultrathin InN layers embedded into GaN, a layer structure that is experimentally achievable.</description><issn>0031-9007</issn><issn>1079-7114</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2012</creationdate><recordtype>article</recordtype><recordid>eNpNkFFLwzAUhYMoOqd_QYpPvnTLbdomeRTRORg6hj6XLEk10iUzSZX56410ik8XDt8593AQugA8AcBkunzdhZX-WOgYJ4D5BFjNMDlAI8CU5xSgPEQjjAnkHGN6gk5DeMMYQ1GzY3RSkAIqAjBCq6XrhDdfIhpnc-XNh7ZZdFvXuRcjRZcZG_pOROez6IUN5odLYiaymXiYzu3DNN3svRc29pvsU3fdGTpqRRf0-f6O0fPd7dPNfb54nM1vrhe5JITFvGV6zetCK1W2nBZC4rZqqWCqrFXVFkBYVXNJgPJSVYK2VElVkUqwmrBScErG6HLIdSGaJkgTtXyVzlotY5NGAorLBF0N0Na7916H2GxMkKmlsNr1oYGC0AqnQpDQekCldyF43TZbbzbC7xrAP3mk-Td60ngzjJ6MF_sf_Xqj1Z_td2XyDUwsgGk</recordid><startdate>20121102</startdate><enddate>20121102</enddate><creator>Miao, M S</creator><creator>Yan, Q</creator><creator>Van de Walle, C G</creator><creator>Lou, W K</creator><creator>Li, L L</creator><creator>Chang, K</creator><general>American Physical Society</general><scope>NPM</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7X8</scope><scope>OTOTI</scope></search><sort><creationdate>20121102</creationdate><title>Polarization-driven topological insulator transition in a GaN/InN/GaN quantum well</title><author>Miao, M S ; Yan, Q ; Van de Walle, C G ; Lou, W K ; Li, L L ; Chang, K</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c338t-f8eb962edd4f972ac0f5f7a8d46d5f2138569c31794d5a7f7dcd535a86384a973</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2012</creationdate><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Miao, M S</creatorcontrib><creatorcontrib>Yan, Q</creatorcontrib><creatorcontrib>Van de Walle, C G</creatorcontrib><creatorcontrib>Lou, W K</creatorcontrib><creatorcontrib>Li, L L</creatorcontrib><creatorcontrib>Chang, K</creatorcontrib><collection>PubMed</collection><collection>CrossRef</collection><collection>MEDLINE - Academic</collection><collection>OSTI.GOV</collection><jtitle>Physical review letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Miao, M S</au><au>Yan, Q</au><au>Van de Walle, C G</au><au>Lou, W K</au><au>Li, L L</au><au>Chang, K</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Polarization-driven topological insulator transition in a GaN/InN/GaN quantum well</atitle><jtitle>Physical review letters</jtitle><addtitle>Phys Rev Lett</addtitle><date>2012-11-02</date><risdate>2012</risdate><volume>109</volume><issue>18</issue><spage>186803</spage><epage>186803</epage><pages>186803-186803</pages><artnum>186803</artnum><issn>0031-9007</issn><eissn>1079-7114</eissn><abstract>Topological insulator (TI) states have been demonstrated in materials with a narrow gap and large spin-orbit interactions (SOI). Here we demonstrate that nanoscale engineering can also give rise to a TI state, even in conventional semiconductors with a sizable gap and small SOI. Based on advanced first-principles calculations combined with an effective low-energy k · p Hamiltonian, we show that the intrinsic polarization of materials can be utilized to simultaneously reduce the energy gap and enhance the SOI, driving the system to a TI state. The proposed system consists of ultrathin InN layers embedded into GaN, a layer structure that is experimentally achievable.</abstract><cop>United States</cop><pub>American Physical Society</pub><pmid>23215311</pmid><doi>10.1103/PhysRevLett.109.186803</doi><tpages>1</tpages><oa>free_for_read</oa></addata></record>
fulltext	fulltext
identifier	ISSN: 0031-9007
ispartof	Physical review letters, 2012-11, Vol.109 (18), p.186803-186803, Article 186803
issn	0031-9007 1079-7114
language	eng
recordid	cdi_osti_scitechconnect_1101704
source	American Physical Society Journals
title	Polarization-driven topological insulator transition in a GaN/InN/GaN quantum well
url	https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-02-19T18%3A26%3A41IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_osti_&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Polarization-driven%20topological%20insulator%20transition%20in%20a%20GaN/InN/GaN%20quantum%20well&rft.jtitle=Physical%20review%20letters&rft.au=Miao,%20M%20S&rft.date=2012-11-02&rft.volume=109&rft.issue=18&rft.spage=186803&rft.epage=186803&rft.pages=186803-186803&rft.artnum=186803&rft.issn=0031-9007&rft.eissn=1079-7114&rft_id=info:doi/10.1103/PhysRevLett.109.186803&rft_dat=%3Cproquest_osti_%3E1237503381%3C/proquest_osti_%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=1237503381&rft_id=info:pmid/23215311&rfr_iscdi=true