Atomistic simulations of MeV ion irradiation of silica
We used molecular dynamics simulations to study 2.3MeV Au ion irradiation of silica. In this energy regime, the energy loss of the ion is divided almost equally between electronic and nuclear energy loss. The inelastic thermal spike model was used to model the electron–phonon interactions due to the...
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| Veröffentlicht in: | Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms Beam interactions with materials and atoms, 2013-05, Vol.303, p.129-132 |
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| container_title | Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms |
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| creator | Backman, M. Djurabekova, F. Pakarinen, O.H. Nordlund, K. Zhang, Y. Toulemonde, M. Weber, W.J. |
| description | We used molecular dynamics simulations to study 2.3MeV Au ion irradiation of silica. In this energy regime, the energy loss of the ion is divided almost equally between electronic and nuclear energy loss. The inelastic thermal spike model was used to model the electron–phonon interactions due to the high electronic energy loss. Binary collision approximation calculations provided input for the recoil energies due to MeV ions. We performed simulations of the damage due to the separate damage mechanisms as well as together, and found that the inelastic thermal spike is needed to accurately simulate the irradiation damage from MeV ions. |
| doi_str_mv | 10.1016/j.nimb.2012.10.020 |
| format | Article |
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(ORNL), Oak Ridge, TN (United States)</creatorcontrib><description>We used molecular dynamics simulations to study 2.3MeV Au ion irradiation of silica. In this energy regime, the energy loss of the ion is divided almost equally between electronic and nuclear energy loss. The inelastic thermal spike model was used to model the electron–phonon interactions due to the high electronic energy loss. Binary collision approximation calculations provided input for the recoil energies due to MeV ions. We performed simulations of the damage due to the separate damage mechanisms as well as together, and found that the inelastic thermal spike is needed to accurately simulate the irradiation damage from MeV ions.</description><identifier>ISSN: 0168-583X</identifier><identifier>EISSN: 1872-9584</identifier><identifier>DOI: 10.1016/j.nimb.2012.10.020</identifier><language>eng</language><publisher>United States: Elsevier B.V</publisher><subject>Computer simulation ; Damage ; Electronics ; Energy (nuclear) ; Inelastic thermal spike ; Ion irradiation ; Molecular dynamics ; Molecular dynamics simulations ; Radiation damage ; Silicon dioxide ; Simulation ; Spikes (lattice defects)</subject><ispartof>Nuclear instruments & methods in physics research. 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(ORNL), Oak Ridge, TN (United States)</creatorcontrib><title>Atomistic simulations of MeV ion irradiation of silica</title><title>Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms</title><description>We used molecular dynamics simulations to study 2.3MeV Au ion irradiation of silica. In this energy regime, the energy loss of the ion is divided almost equally between electronic and nuclear energy loss. The inelastic thermal spike model was used to model the electron–phonon interactions due to the high electronic energy loss. Binary collision approximation calculations provided input for the recoil energies due to MeV ions. We performed simulations of the damage due to the separate damage mechanisms as well as together, and found that the inelastic thermal spike is needed to accurately simulate the irradiation damage from MeV ions.</description><subject>Computer simulation</subject><subject>Damage</subject><subject>Electronics</subject><subject>Energy (nuclear)</subject><subject>Inelastic thermal spike</subject><subject>Ion irradiation</subject><subject>Molecular dynamics</subject><subject>Molecular dynamics simulations</subject><subject>Radiation damage</subject><subject>Silicon dioxide</subject><subject>Simulation</subject><subject>Spikes (lattice defects)</subject><issn>0168-583X</issn><issn>1872-9584</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2013</creationdate><recordtype>article</recordtype><recordid>eNp9kEFLxDAQhYMouK7-AU_Fk5fWpGnSFrwsi6vCihcVbyFNJpilbdakK_jvTaxnc5nw-GZ47yF0SXBBMOE3u2K0Q1eUmJRRKHCJj9CCNHWZt6ypjtEiQk3OGvp-is5C2OH4GGULxFeTG2yYrMqCHQ69nKwbQ-ZM9gRvWfxn1nup7a-e5GB7q-Q5OjGyD3DxN5fodXP3sn7It8_3j-vVNldVyadcSS254UY2dd3xrqOtIVq3HW8NSGMkNFQrxQjUkSspxa1kFWjMgSmoupou0dV810WLIig7gfpQbhxBTYLghtYkQdcztPfu8wBhEjGRgr6XI7hDEDE6q1veUh7RckaVdyF4MGLv7SD9dzwmUpNiJ1KTIjWZtNhkXLqdlyAm_bLgkxEYFWjrkw_t7H_rP1O6fQc</recordid><startdate>20130501</startdate><enddate>20130501</enddate><creator>Backman, M.</creator><creator>Djurabekova, F.</creator><creator>Pakarinen, O.H.</creator><creator>Nordlund, K.</creator><creator>Zhang, Y.</creator><creator>Toulemonde, M.</creator><creator>Weber, W.J.</creator><general>Elsevier B.V</general><scope>AAYXX</scope><scope>CITATION</scope><scope>7SC</scope><scope>7U5</scope><scope>8FD</scope><scope>H8D</scope><scope>JQ2</scope><scope>L7M</scope><scope>L~C</scope><scope>L~D</scope><scope>OTOTI</scope></search><sort><creationdate>20130501</creationdate><title>Atomistic simulations of MeV ion irradiation of silica</title><author>Backman, M. ; Djurabekova, F. ; Pakarinen, O.H. ; Nordlund, K. ; Zhang, Y. ; Toulemonde, M. ; Weber, W.J.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c426t-cada6f6fa877b6bb39f1dd9b69feaffae83dcc51e7da623309a54ed06e5ce4b73</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2013</creationdate><topic>Computer simulation</topic><topic>Damage</topic><topic>Electronics</topic><topic>Energy (nuclear)</topic><topic>Inelastic thermal spike</topic><topic>Ion irradiation</topic><topic>Molecular dynamics</topic><topic>Molecular dynamics simulations</topic><topic>Radiation damage</topic><topic>Silicon dioxide</topic><topic>Simulation</topic><topic>Spikes (lattice defects)</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Backman, M.</creatorcontrib><creatorcontrib>Djurabekova, F.</creatorcontrib><creatorcontrib>Pakarinen, O.H.</creatorcontrib><creatorcontrib>Nordlund, K.</creatorcontrib><creatorcontrib>Zhang, Y.</creatorcontrib><creatorcontrib>Toulemonde, M.</creatorcontrib><creatorcontrib>Weber, W.J.</creatorcontrib><creatorcontrib>Oak Ridge National Lab. 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| identifier | ISSN: 0168-583X |
| ispartof | Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 2013-05, Vol.303, p.129-132 |
| issn | 0168-583X 1872-9584 |
| language | eng |
| recordid | cdi_osti_scitechconnect_1083717 |
| source | Elsevier ScienceDirect Journals |
| subjects | Computer simulation Damage Electronics Energy (nuclear) Inelastic thermal spike Ion irradiation Molecular dynamics Molecular dynamics simulations Radiation damage Silicon dioxide Simulation Spikes (lattice defects) |
| title | Atomistic simulations of MeV ion irradiation of silica |
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