Hard X-ray Nano Patterning using a Sectioned Multilayer

We report a hard x-ray patterning capable of drawing lines with a width below 100 nm using x-rays at 0.165 nm. A specially prepared mask based on multilayer growth technology was used as an x-ray mask effectively. The x-ray Talbot effect in near field was investigated and utilized in the patterning....

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Veröffentlicht in:	Journal of applied physics 2011-12, Vol.109 (4)
Hauptverfasser:	S Lee, I Cho, J Kim, H Yan, R Conley, C Liu, A Macrander, J Maser, G Stephenson, et al
Format:	Artikel
Sprache:	eng
Schlagworte:	BNL CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS PHYSICS RAYLEIGH SCATTERING
Online-Zugang:	Volltext
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