Hard X-ray Nano Patterning using a Sectioned Multilayer

Hard X-ray Nano Patterning using a Sectioned Multilayer

We report a hard x-ray patterning capable of drawing lines with a width below 100 nm using x-rays at 0.165 nm. A specially prepared mask based on multilayer growth technology was used as an x-ray mask effectively. The x-ray Talbot effect in near field was investigated and utilized in the patterning....

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Veröffentlicht in:Journal of applied physics 2011-12, Vol.109 (4)
Hauptverfasser: S Lee, I Cho, J Kim, H Yan, R Conley, C Liu, A Macrander, J Maser, G Stephenson, et al
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Sprache:eng
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CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS
PHYSICS
RAYLEIGH SCATTERING
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container_issue 4
container_start_page
container_title Journal of applied physics
container_volume 109
creator S Lee
I Cho
J Kim
H Yan
R Conley
C Liu
A Macrander
J Maser
G Stephenson
et al
description We report a hard x-ray patterning capable of drawing lines with a width below 100 nm using x-rays at 0.165 nm. A specially prepared mask based on multilayer growth technology was used as an x-ray mask effectively. The x-ray Talbot effect in near field was investigated and utilized in the patterning. Since multilayers with a few nanometer layer spacing are readily available, the proposed hard x-ray nano patterning, free of the limit imposed by the Rayleigh criterion in optical range, can potentially be an ultimate optical lithography technique.
doi_str_mv 10.1063/1.3552589
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subjects BNL
CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS
PHYSICS
RAYLEIGH SCATTERING
title Hard X-ray Nano Patterning using a Sectioned Multilayer
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