Oxide Heterogrowth on Ion-exfoliated Thin-film Complex Oxide Substrates

Fabrication of a bilayer HfO{sub 2}/single-crystal LiNbO{sub 3} film is demonstrated using deep high-energy He{sup +} implantation in a LiNbO{sub 3} wafer, followed by HfO{sub 2} atomic layer deposition, and, then, selective etching exfoliation from the bulk LiNbO{sub 3} crystal. The properties and...

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Veröffentlicht in:Thin solid films 2009-11, Vol.518 (1)
Hauptverfasser: Gang, O., Chen, T.-L., Kou, A., Ofan, A., Gaathon, O., Osgood Jr., R.M., Vanamurthy, L., Bakhru, S., Bakhru, H.
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Sprache:eng
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Zusammenfassung:Fabrication of a bilayer HfO{sub 2}/single-crystal LiNbO{sub 3} film is demonstrated using deep high-energy He{sup +} implantation in a LiNbO{sub 3} wafer, followed by HfO{sub 2} atomic layer deposition, and, then, selective etching exfoliation from the bulk LiNbO{sub 3} crystal. The properties and morphology of these exfoliated bilayer films are characterized using a set of thin-film probes. Pre-exfoliation film patterning and one model application, in surface-refractive-index tuning of guided waves in a free-standing LiNbO{sub 3} film, are also demonstrated.
ISSN:0040-6090
1879-2731