Band alignment of atomic layer deposited HfO2 on clean and N passivated germanium surfaces

Hard x-ray photoelectron spectroscopy has been used to study the band alignment between atomic layer deposited HfO2 on clean Ge (100) and nitrogen treated Ge (100) surfaces. The position of the valence-band maximum was determined by convolving theoretically calculated density of states from first-pr...

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Veröffentlicht in:	Applied physics letters 2010-12, Vol.97 (24)
Hauptverfasser:	Rumaiz, Abdul K., Woicik, J. C., Carini, G. A., Siddons, D. P., Cockayne, E., Huey, E., Lysaght, P. S., Fischer, D. A., Genova, V.
Format:	Artikel
Sprache:	eng
Schlagworte:	ALIGNMENT CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY GERMANIUM HETEROJUNCTIONS NITROGEN OXIDES X-RAY PHOTOELECTRON SPECTROSCOPY
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