Band alignment of atomic layer deposited HfO2 on clean and N passivated germanium surfaces
Hard x-ray photoelectron spectroscopy has been used to study the band alignment between atomic layer deposited HfO2 on clean Ge (100) and nitrogen treated Ge (100) surfaces. The position of the valence-band maximum was determined by convolving theoretically calculated density of states from first-pr...
Gespeichert in:
| Veröffentlicht in: | Applied physics letters 2010-12, Vol.97 (24) |
|---|---|
| Hauptverfasser: | , , , , , , , , |
| Format: | Artikel |
| Sprache: | eng |
| Schlagworte: | |
| Online-Zugang: | Volltext |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| container_end_page | |
|---|---|
| container_issue | 24 |
| container_start_page | |
| container_title | Applied physics letters |
| container_volume | 97 |
| creator | Rumaiz, Abdul K. Woicik, J. C. Carini, G. A. Siddons, D. P. Cockayne, E. Huey, E. Lysaght, P. S. Fischer, D. A. Genova, V. |
| description | Hard x-ray photoelectron spectroscopy has been used to study the band alignment between atomic layer deposited HfO2 on clean Ge (100) and nitrogen treated Ge (100) surfaces. The position of the valence-band maximum was determined by convolving theoretically calculated density of states from first-principles calculations and comparing with experimental valence-band data. Using Kraut’s method, the valence-band offsets were found to be 3.2±0.1 and 3.3±0.1 eV for the samples grown on clean and N passivated Ge, respectively. The oxide charge measured from capacitance-voltage measurements shows a significant increase between the two samples; however, the small change in the band offset between the two systems strongly indicates negligible contribution of the interface to the conduction/valence-band barrier and the band alignment of the heterojunctions. |
| doi_str_mv | 10.1063/1.3524262 |
| format | Article |
| fullrecord | <record><control><sourceid>crossref_osti_</sourceid><recordid>TN_cdi_osti_scitechconnect_1020866</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>10_1063_1_3524262</sourcerecordid><originalsourceid>FETCH-LOGICAL-c256t-b79ef30ec655ce6e2dd44b9139b4a9c9500a79ad39bda309d178b44cdd4312b3</originalsourceid><addsrcrecordid>eNotkE9LAzEUxIMoWKsHv0Hw5mFr_myyzVGLtUKxl568LG-TtzWym5RkK_Tbu6U9PYb3m2EYQh45m3Gm5QufSSVKocUVmXBWVYXkfH5NJowxWWij-C25y_l3lEpIOSHfbxAchc7vQo9hoLGlMMTeW9rBERN1uI_ZD-joqt0IGgO1HUKgJ9cX3UPO_g9O7x2mHoI_9DQfUgsW8z25aaHL-HC5U7Jdvm8Xq2K9-fhcvK4LK5QeiqYy2EqGVitlUaNwriwbw6VpSjDWKMagMuBG7UAy43g1b8rSjpjkopFT8nSOjXnwdbZjWftjYwhoh5ozweZaj9DzGbIp5pywrffJ95COI1Gfhqt5fRlO_gPc71-d</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype></control><display><type>article</type><title>Band alignment of atomic layer deposited HfO2 on clean and N passivated germanium surfaces</title><source>AIP Journals Complete</source><source>AIP Digital Archive</source><source>Alma/SFX Local Collection</source><creator>Rumaiz, Abdul K. ; Woicik, J. C. ; Carini, G. A. ; Siddons, D. P. ; Cockayne, E. ; Huey, E. ; Lysaght, P. S. ; Fischer, D. A. ; Genova, V.</creator><creatorcontrib>Rumaiz, Abdul K. ; Woicik, J. C. ; Carini, G. A. ; Siddons, D. P. ; Cockayne, E. ; Huey, E. ; Lysaght, P. S. ; Fischer, D. A. ; Genova, V. ; BROOKHAVEN NATIONAL LABORATORY (BNL)</creatorcontrib><description>Hard x-ray photoelectron spectroscopy has been used to study the band alignment between atomic layer deposited HfO2 on clean Ge (100) and nitrogen treated Ge (100) surfaces. The position of the valence-band maximum was determined by convolving theoretically calculated density of states from first-principles calculations and comparing with experimental valence-band data. Using Kraut’s method, the valence-band offsets were found to be 3.2±0.1 and 3.3±0.1 eV for the samples grown on clean and N passivated Ge, respectively. The oxide charge measured from capacitance-voltage measurements shows a significant increase between the two samples; however, the small change in the band offset between the two systems strongly indicates negligible contribution of the interface to the conduction/valence-band barrier and the band alignment of the heterojunctions.</description><identifier>ISSN: 0003-6951</identifier><identifier>EISSN: 1077-3118</identifier><identifier>DOI: 10.1063/1.3524262</identifier><language>eng</language><publisher>United States</publisher><subject>ALIGNMENT ; CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY ; GERMANIUM ; HETEROJUNCTIONS ; NITROGEN ; OXIDES ; X-RAY PHOTOELECTRON SPECTROSCOPY</subject><ispartof>Applied physics letters, 2010-12, Vol.97 (24)</ispartof><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c256t-b79ef30ec655ce6e2dd44b9139b4a9c9500a79ad39bda309d178b44cdd4312b3</citedby><cites>FETCH-LOGICAL-c256t-b79ef30ec655ce6e2dd44b9139b4a9c9500a79ad39bda309d178b44cdd4312b3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>230,314,780,784,885,27924,27925</link.rule.ids><backlink>$$Uhttps://www.osti.gov/biblio/1020866$$D View this record in Osti.gov$$Hfree_for_read</backlink></links><search><creatorcontrib>Rumaiz, Abdul K.</creatorcontrib><creatorcontrib>Woicik, J. C.</creatorcontrib><creatorcontrib>Carini, G. A.</creatorcontrib><creatorcontrib>Siddons, D. P.</creatorcontrib><creatorcontrib>Cockayne, E.</creatorcontrib><creatorcontrib>Huey, E.</creatorcontrib><creatorcontrib>Lysaght, P. S.</creatorcontrib><creatorcontrib>Fischer, D. A.</creatorcontrib><creatorcontrib>Genova, V.</creatorcontrib><creatorcontrib>BROOKHAVEN NATIONAL LABORATORY (BNL)</creatorcontrib><title>Band alignment of atomic layer deposited HfO2 on clean and N passivated germanium surfaces</title><title>Applied physics letters</title><description>Hard x-ray photoelectron spectroscopy has been used to study the band alignment between atomic layer deposited HfO2 on clean Ge (100) and nitrogen treated Ge (100) surfaces. The position of the valence-band maximum was determined by convolving theoretically calculated density of states from first-principles calculations and comparing with experimental valence-band data. Using Kraut’s method, the valence-band offsets were found to be 3.2±0.1 and 3.3±0.1 eV for the samples grown on clean and N passivated Ge, respectively. The oxide charge measured from capacitance-voltage measurements shows a significant increase between the two samples; however, the small change in the band offset between the two systems strongly indicates negligible contribution of the interface to the conduction/valence-band barrier and the band alignment of the heterojunctions.</description><subject>ALIGNMENT</subject><subject>CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY</subject><subject>GERMANIUM</subject><subject>HETEROJUNCTIONS</subject><subject>NITROGEN</subject><subject>OXIDES</subject><subject>X-RAY PHOTOELECTRON SPECTROSCOPY</subject><issn>0003-6951</issn><issn>1077-3118</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2010</creationdate><recordtype>article</recordtype><recordid>eNotkE9LAzEUxIMoWKsHv0Hw5mFr_myyzVGLtUKxl568LG-TtzWym5RkK_Tbu6U9PYb3m2EYQh45m3Gm5QufSSVKocUVmXBWVYXkfH5NJowxWWij-C25y_l3lEpIOSHfbxAchc7vQo9hoLGlMMTeW9rBERN1uI_ZD-joqt0IGgO1HUKgJ9cX3UPO_g9O7x2mHoI_9DQfUgsW8z25aaHL-HC5U7Jdvm8Xq2K9-fhcvK4LK5QeiqYy2EqGVitlUaNwriwbw6VpSjDWKMagMuBG7UAy43g1b8rSjpjkopFT8nSOjXnwdbZjWftjYwhoh5ozweZaj9DzGbIp5pywrffJ95COI1Gfhqt5fRlO_gPc71-d</recordid><startdate>20101213</startdate><enddate>20101213</enddate><creator>Rumaiz, Abdul K.</creator><creator>Woicik, J. C.</creator><creator>Carini, G. A.</creator><creator>Siddons, D. P.</creator><creator>Cockayne, E.</creator><creator>Huey, E.</creator><creator>Lysaght, P. S.</creator><creator>Fischer, D. A.</creator><creator>Genova, V.</creator><scope>AAYXX</scope><scope>CITATION</scope><scope>OTOTI</scope></search><sort><creationdate>20101213</creationdate><title>Band alignment of atomic layer deposited HfO2 on clean and N passivated germanium surfaces</title><author>Rumaiz, Abdul K. ; Woicik, J. C. ; Carini, G. A. ; Siddons, D. P. ; Cockayne, E. ; Huey, E. ; Lysaght, P. S. ; Fischer, D. A. ; Genova, V.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c256t-b79ef30ec655ce6e2dd44b9139b4a9c9500a79ad39bda309d178b44cdd4312b3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2010</creationdate><topic>ALIGNMENT</topic><topic>CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY</topic><topic>GERMANIUM</topic><topic>HETEROJUNCTIONS</topic><topic>NITROGEN</topic><topic>OXIDES</topic><topic>X-RAY PHOTOELECTRON SPECTROSCOPY</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Rumaiz, Abdul K.</creatorcontrib><creatorcontrib>Woicik, J. C.</creatorcontrib><creatorcontrib>Carini, G. A.</creatorcontrib><creatorcontrib>Siddons, D. P.</creatorcontrib><creatorcontrib>Cockayne, E.</creatorcontrib><creatorcontrib>Huey, E.</creatorcontrib><creatorcontrib>Lysaght, P. S.</creatorcontrib><creatorcontrib>Fischer, D. A.</creatorcontrib><creatorcontrib>Genova, V.</creatorcontrib><creatorcontrib>BROOKHAVEN NATIONAL LABORATORY (BNL)</creatorcontrib><collection>CrossRef</collection><collection>OSTI.GOV</collection><jtitle>Applied physics letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Rumaiz, Abdul K.</au><au>Woicik, J. C.</au><au>Carini, G. A.</au><au>Siddons, D. P.</au><au>Cockayne, E.</au><au>Huey, E.</au><au>Lysaght, P. S.</au><au>Fischer, D. A.</au><au>Genova, V.</au><aucorp>BROOKHAVEN NATIONAL LABORATORY (BNL)</aucorp><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Band alignment of atomic layer deposited HfO2 on clean and N passivated germanium surfaces</atitle><jtitle>Applied physics letters</jtitle><date>2010-12-13</date><risdate>2010</risdate><volume>97</volume><issue>24</issue><issn>0003-6951</issn><eissn>1077-3118</eissn><abstract>Hard x-ray photoelectron spectroscopy has been used to study the band alignment between atomic layer deposited HfO2 on clean Ge (100) and nitrogen treated Ge (100) surfaces. The position of the valence-band maximum was determined by convolving theoretically calculated density of states from first-principles calculations and comparing with experimental valence-band data. Using Kraut’s method, the valence-band offsets were found to be 3.2±0.1 and 3.3±0.1 eV for the samples grown on clean and N passivated Ge, respectively. The oxide charge measured from capacitance-voltage measurements shows a significant increase between the two samples; however, the small change in the band offset between the two systems strongly indicates negligible contribution of the interface to the conduction/valence-band barrier and the band alignment of the heterojunctions.</abstract><cop>United States</cop><doi>10.1063/1.3524262</doi></addata></record> |
| fulltext | fulltext |
| identifier | ISSN: 0003-6951 |
| ispartof | Applied physics letters, 2010-12, Vol.97 (24) |
| issn | 0003-6951 1077-3118 |
| language | eng |
| recordid | cdi_osti_scitechconnect_1020866 |
| source | AIP Journals Complete; AIP Digital Archive; Alma/SFX Local Collection |
| subjects | ALIGNMENT CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY GERMANIUM HETEROJUNCTIONS NITROGEN OXIDES X-RAY PHOTOELECTRON SPECTROSCOPY |
| title | Band alignment of atomic layer deposited HfO2 on clean and N passivated germanium surfaces |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-03T02%3A52%3A17IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-crossref_osti_&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Band%20alignment%20of%20atomic%20layer%20deposited%20HfO2%20on%20clean%20and%20N%20passivated%20germanium%20surfaces&rft.jtitle=Applied%20physics%20letters&rft.au=Rumaiz,%20Abdul%20K.&rft.aucorp=BROOKHAVEN%20NATIONAL%20LABORATORY%20(BNL)&rft.date=2010-12-13&rft.volume=97&rft.issue=24&rft.issn=0003-6951&rft.eissn=1077-3118&rft_id=info:doi/10.1063/1.3524262&rft_dat=%3Ccrossref_osti_%3E10_1063_1_3524262%3C/crossref_osti_%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true |