Seeded growth of AlN bulk crystals in m- and c-orientation
Seeded growth of AlN boules was achieved on m-(1 0 1¯ 0) and c-(0 0 0 1¯) orientations by physical vapor transport (PVT). The single crystalline m- and c-plane seeds were cut from freestanding AlN single crystals. AlN boules 12 mm in diameter and 7 mm in height were grown at source temperatures arou...
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| Veröffentlicht in: | Journal of crystal growth 2009-12, Vol.312 (1), p.58-63 |
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| container_title | Journal of crystal growth |
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| creator | Lu, P. Collazo, R. Dalmau, R.F. Durkaya, G. Dietz, N. Raghothamachar, B. Dudley, M. Sitar, Z. |
| description | Seeded growth of AlN boules was achieved on
m-(1
0
1¯
0) and
c-(0
0
0
1¯) orientations by physical vapor transport (PVT). The single crystalline
m- and
c-plane seeds were cut from freestanding AlN single crystals. AlN boules 12
mm in diameter and 7
mm in height were grown at source temperatures around 2280
°C in N
2 atmosphere at 500
Torr of total pressure. Under identical process conditions, the
m- and
c-plane boules exhibited the same growth rates, 150–170
μm/h, and similar expansion angles, 22–27°, which indicated that the growth was controlled by the thermal profile inside the crucible rather than by crystallographic differences. X-ray rocking curve analysis and Raman spectroscopy confirmed that both
m- and
c-plane grown crystals possessed high crystalline quality. The dislocation density in both crystals was non-uniform and in the range 10
2–10
5
cm
−2, as characterized by X-ray topography. |
| doi_str_mv | 10.1016/j.jcrysgro.2009.10.008 |
| format | Article |
| fullrecord | <record><control><sourceid>proquest_osti_</sourceid><recordid>TN_cdi_osti_scitechconnect_1019694</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><els_id>S0022024809009014</els_id><sourcerecordid>36211953</sourcerecordid><originalsourceid>FETCH-LOGICAL-c436t-4fffaf638bcbc67fcd4ea891e0104418cd8c5d9e6e8c62ff62d5041cf96f431b3</originalsourceid><addsrcrecordid>eNqFkE9PwzAMxSMEEmPwFVDEgVtL0qZZy4lp4p80wQE4V63jsJSuGUkG2rcn1eDMxZbs936yHyHnnKWccXnVpR24nX93Ns0Yq-IwZaw8IBNezvKkYCw7JJNYs4RlojwmJ953jEUnZxNy_YKoUNHo_g4rajWd90-03fYfdISGpvfUDHSd0GZQFBLrDA6hCcYOp-RIxzWe_fYpebu7fV08JMvn-8fFfJmAyGVIhNa60TIvW2hBzjQogU1ZcWScCcFLUCUUqkKJJchMa5mpggkOupJa5LzNp-Riz7U-mNqDCQgrsMOAEOqYQCUrEUWXe9HG2c8t-lCvjQfs-2ZAu_V1LjPOqyKPQrkXgrPeO9T1xpl143YRNdJk3dV_edZjnuM85hmNN3sjxl-_DLrxFBwAlXHjJcqa_xA_grqBfg</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>36211953</pqid></control><display><type>article</type><title>Seeded growth of AlN bulk crystals in m- and c-orientation</title><source>Elsevier ScienceDirect Journals</source><creator>Lu, P. ; Collazo, R. ; Dalmau, R.F. ; Durkaya, G. ; Dietz, N. ; Raghothamachar, B. ; Dudley, M. ; Sitar, Z.</creator><creatorcontrib>Lu, P. ; Collazo, R. ; Dalmau, R.F. ; Durkaya, G. ; Dietz, N. ; Raghothamachar, B. ; Dudley, M. ; Sitar, Z. ; Brookhaven National Laboratory (BNL) National Synchrotron Light Source</creatorcontrib><description>Seeded growth of AlN boules was achieved on
m-(1
0
1¯
0) and
c-(0
0
0
1¯) orientations by physical vapor transport (PVT). The single crystalline
m- and
c-plane seeds were cut from freestanding AlN single crystals. AlN boules 12
mm in diameter and 7
mm in height were grown at source temperatures around 2280
°C in N
2 atmosphere at 500
Torr of total pressure. Under identical process conditions, the
m- and
c-plane boules exhibited the same growth rates, 150–170
μm/h, and similar expansion angles, 22–27°, which indicated that the growth was controlled by the thermal profile inside the crucible rather than by crystallographic differences. X-ray rocking curve analysis and Raman spectroscopy confirmed that both
m- and
c-plane grown crystals possessed high crystalline quality. The dislocation density in both crystals was non-uniform and in the range 10
2–10
5
cm
−2, as characterized by X-ray topography.</description><identifier>ISSN: 0022-0248</identifier><identifier>EISSN: 1873-5002</identifier><identifier>DOI: 10.1016/j.jcrysgro.2009.10.008</identifier><language>eng</language><publisher>United States: Elsevier B.V</publisher><subject>A1. High resolution X-ray diffraction ; A1. Substrates ; A1. X-ray topography ; A2. Growth from vapor ; A2. Seeded vapor growth ; B1. Nitrides ; CRUCIBLES ; DISLOCATIONS ; MATERIALS SCIENCE ; MONOCRYSTALS ; national synchrotron light source ; NEUTRON DIFFRACTION ; NITRIDES ; RAMAN SPECTROSCOPY ; RESOLUTION ; SEEDS ; SUBSTRATES ; TOPOGRAPHY ; TRANSPORT ; X-RAY DIFFRACTION</subject><ispartof>Journal of crystal growth, 2009-12, Vol.312 (1), p.58-63</ispartof><rights>2009 Elsevier B.V.</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c436t-4fffaf638bcbc67fcd4ea891e0104418cd8c5d9e6e8c62ff62d5041cf96f431b3</citedby><cites>FETCH-LOGICAL-c436t-4fffaf638bcbc67fcd4ea891e0104418cd8c5d9e6e8c62ff62d5041cf96f431b3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://www.sciencedirect.com/science/article/pii/S0022024809009014$$EHTML$$P50$$Gelsevier$$H</linktohtml><link.rule.ids>230,314,776,780,881,3537,27901,27902,65306</link.rule.ids><backlink>$$Uhttps://www.osti.gov/biblio/1019694$$D View this record in Osti.gov$$Hfree_for_read</backlink></links><search><creatorcontrib>Lu, P.</creatorcontrib><creatorcontrib>Collazo, R.</creatorcontrib><creatorcontrib>Dalmau, R.F.</creatorcontrib><creatorcontrib>Durkaya, G.</creatorcontrib><creatorcontrib>Dietz, N.</creatorcontrib><creatorcontrib>Raghothamachar, B.</creatorcontrib><creatorcontrib>Dudley, M.</creatorcontrib><creatorcontrib>Sitar, Z.</creatorcontrib><creatorcontrib>Brookhaven National Laboratory (BNL) National Synchrotron Light Source</creatorcontrib><title>Seeded growth of AlN bulk crystals in m- and c-orientation</title><title>Journal of crystal growth</title><description>Seeded growth of AlN boules was achieved on
m-(1
0
1¯
0) and
c-(0
0
0
1¯) orientations by physical vapor transport (PVT). The single crystalline
m- and
c-plane seeds were cut from freestanding AlN single crystals. AlN boules 12
mm in diameter and 7
mm in height were grown at source temperatures around 2280
°C in N
2 atmosphere at 500
Torr of total pressure. Under identical process conditions, the
m- and
c-plane boules exhibited the same growth rates, 150–170
μm/h, and similar expansion angles, 22–27°, which indicated that the growth was controlled by the thermal profile inside the crucible rather than by crystallographic differences. X-ray rocking curve analysis and Raman spectroscopy confirmed that both
m- and
c-plane grown crystals possessed high crystalline quality. The dislocation density in both crystals was non-uniform and in the range 10
2–10
5
cm
−2, as characterized by X-ray topography.</description><subject>A1. High resolution X-ray diffraction</subject><subject>A1. Substrates</subject><subject>A1. X-ray topography</subject><subject>A2. Growth from vapor</subject><subject>A2. Seeded vapor growth</subject><subject>B1. Nitrides</subject><subject>CRUCIBLES</subject><subject>DISLOCATIONS</subject><subject>MATERIALS SCIENCE</subject><subject>MONOCRYSTALS</subject><subject>national synchrotron light source</subject><subject>NEUTRON DIFFRACTION</subject><subject>NITRIDES</subject><subject>RAMAN SPECTROSCOPY</subject><subject>RESOLUTION</subject><subject>SEEDS</subject><subject>SUBSTRATES</subject><subject>TOPOGRAPHY</subject><subject>TRANSPORT</subject><subject>X-RAY DIFFRACTION</subject><issn>0022-0248</issn><issn>1873-5002</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2009</creationdate><recordtype>article</recordtype><recordid>eNqFkE9PwzAMxSMEEmPwFVDEgVtL0qZZy4lp4p80wQE4V63jsJSuGUkG2rcn1eDMxZbs936yHyHnnKWccXnVpR24nX93Ns0Yq-IwZaw8IBNezvKkYCw7JJNYs4RlojwmJ953jEUnZxNy_YKoUNHo_g4rajWd90-03fYfdISGpvfUDHSd0GZQFBLrDA6hCcYOp-RIxzWe_fYpebu7fV08JMvn-8fFfJmAyGVIhNa60TIvW2hBzjQogU1ZcWScCcFLUCUUqkKJJchMa5mpggkOupJa5LzNp-Riz7U-mNqDCQgrsMOAEOqYQCUrEUWXe9HG2c8t-lCvjQfs-2ZAu_V1LjPOqyKPQrkXgrPeO9T1xpl143YRNdJk3dV_edZjnuM85hmNN3sjxl-_DLrxFBwAlXHjJcqa_xA_grqBfg</recordid><startdate>20091215</startdate><enddate>20091215</enddate><creator>Lu, P.</creator><creator>Collazo, R.</creator><creator>Dalmau, R.F.</creator><creator>Durkaya, G.</creator><creator>Dietz, N.</creator><creator>Raghothamachar, B.</creator><creator>Dudley, M.</creator><creator>Sitar, Z.</creator><general>Elsevier B.V</general><scope>AAYXX</scope><scope>CITATION</scope><scope>7QF</scope><scope>7SR</scope><scope>7U5</scope><scope>8BQ</scope><scope>8FD</scope><scope>JG9</scope><scope>L7M</scope><scope>OTOTI</scope></search><sort><creationdate>20091215</creationdate><title>Seeded growth of AlN bulk crystals in m- and c-orientation</title><author>Lu, P. ; Collazo, R. ; Dalmau, R.F. ; Durkaya, G. ; Dietz, N. ; Raghothamachar, B. ; Dudley, M. ; Sitar, Z.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c436t-4fffaf638bcbc67fcd4ea891e0104418cd8c5d9e6e8c62ff62d5041cf96f431b3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2009</creationdate><topic>A1. High resolution X-ray diffraction</topic><topic>A1. Substrates</topic><topic>A1. X-ray topography</topic><topic>A2. Growth from vapor</topic><topic>A2. Seeded vapor growth</topic><topic>B1. Nitrides</topic><topic>CRUCIBLES</topic><topic>DISLOCATIONS</topic><topic>MATERIALS SCIENCE</topic><topic>MONOCRYSTALS</topic><topic>national synchrotron light source</topic><topic>NEUTRON DIFFRACTION</topic><topic>NITRIDES</topic><topic>RAMAN SPECTROSCOPY</topic><topic>RESOLUTION</topic><topic>SEEDS</topic><topic>SUBSTRATES</topic><topic>TOPOGRAPHY</topic><topic>TRANSPORT</topic><topic>X-RAY DIFFRACTION</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Lu, P.</creatorcontrib><creatorcontrib>Collazo, R.</creatorcontrib><creatorcontrib>Dalmau, R.F.</creatorcontrib><creatorcontrib>Durkaya, G.</creatorcontrib><creatorcontrib>Dietz, N.</creatorcontrib><creatorcontrib>Raghothamachar, B.</creatorcontrib><creatorcontrib>Dudley, M.</creatorcontrib><creatorcontrib>Sitar, Z.</creatorcontrib><creatorcontrib>Brookhaven National Laboratory (BNL) National Synchrotron Light Source</creatorcontrib><collection>CrossRef</collection><collection>Aluminium Industry Abstracts</collection><collection>Engineered Materials Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>METADEX</collection><collection>Technology Research Database</collection><collection>Materials Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>OSTI.GOV</collection><jtitle>Journal of crystal growth</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Lu, P.</au><au>Collazo, R.</au><au>Dalmau, R.F.</au><au>Durkaya, G.</au><au>Dietz, N.</au><au>Raghothamachar, B.</au><au>Dudley, M.</au><au>Sitar, Z.</au><aucorp>Brookhaven National Laboratory (BNL) National Synchrotron Light Source</aucorp><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Seeded growth of AlN bulk crystals in m- and c-orientation</atitle><jtitle>Journal of crystal growth</jtitle><date>2009-12-15</date><risdate>2009</risdate><volume>312</volume><issue>1</issue><spage>58</spage><epage>63</epage><pages>58-63</pages><issn>0022-0248</issn><eissn>1873-5002</eissn><abstract>Seeded growth of AlN boules was achieved on
m-(1
0
1¯
0) and
c-(0
0
0
1¯) orientations by physical vapor transport (PVT). The single crystalline
m- and
c-plane seeds were cut from freestanding AlN single crystals. AlN boules 12
mm in diameter and 7
mm in height were grown at source temperatures around 2280
°C in N
2 atmosphere at 500
Torr of total pressure. Under identical process conditions, the
m- and
c-plane boules exhibited the same growth rates, 150–170
μm/h, and similar expansion angles, 22–27°, which indicated that the growth was controlled by the thermal profile inside the crucible rather than by crystallographic differences. X-ray rocking curve analysis and Raman spectroscopy confirmed that both
m- and
c-plane grown crystals possessed high crystalline quality. The dislocation density in both crystals was non-uniform and in the range 10
2–10
5
cm
−2, as characterized by X-ray topography.</abstract><cop>United States</cop><pub>Elsevier B.V</pub><doi>10.1016/j.jcrysgro.2009.10.008</doi><tpages>6</tpages></addata></record> |
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| ispartof | Journal of crystal growth, 2009-12, Vol.312 (1), p.58-63 |
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| language | eng |
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| source | Elsevier ScienceDirect Journals |
| subjects | A1. High resolution X-ray diffraction A1. Substrates A1. X-ray topography A2. Growth from vapor A2. Seeded vapor growth B1. Nitrides CRUCIBLES DISLOCATIONS MATERIALS SCIENCE MONOCRYSTALS national synchrotron light source NEUTRON DIFFRACTION NITRIDES RAMAN SPECTROSCOPY RESOLUTION SEEDS SUBSTRATES TOPOGRAPHY TRANSPORT X-RAY DIFFRACTION |
| title | Seeded growth of AlN bulk crystals in m- and c-orientation |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-02-01T04%3A36%3A03IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_osti_&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Seeded%20growth%20of%20AlN%20bulk%20crystals%20in%20m-%20and%20c-orientation&rft.jtitle=Journal%20of%20crystal%20growth&rft.au=Lu,%20P.&rft.aucorp=Brookhaven%20National%20Laboratory%20(BNL)%20National%20Synchrotron%20Light%20Source&rft.date=2009-12-15&rft.volume=312&rft.issue=1&rft.spage=58&rft.epage=63&rft.pages=58-63&rft.issn=0022-0248&rft.eissn=1873-5002&rft_id=info:doi/10.1016/j.jcrysgro.2009.10.008&rft_dat=%3Cproquest_osti_%3E36211953%3C/proquest_osti_%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=36211953&rft_id=info:pmid/&rft_els_id=S0022024809009014&rfr_iscdi=true |