Single Hf atoms inside the ultrathin SiO2 interlayer between a HfO2 dielectric film and the Si substrate: How do they modify the interface?

We show that individual Hf atoms may get incorporated into the SiO2 interlayer which is formed between the HfO2 dielectric film and the Si substrate during rapid thermal annealing. We report atomically-resolved Z-contrast images of a Si/SiO2/HfO2 structure together with first-principles calculations...

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