Influence of growth rate on the epitaxial orientation and crystalline quality of CeO2 thin films grown on Al2O3(0001)

Growth rate-induced epitaxial orientations and crystalline quality of CeO2 thin films grown on Al2O3(0001) by oxygen plasma-assisted molecular beam epitaxy were studied using in situ and ex situ characterization techniques. CeO2 grows as three-dimensional (3D) islands and two-dimensional layers at g...

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Veröffentlicht in:	Journal of applied physics 2011-01, Vol.109 (1)
Hauptverfasser:	Nandasiri, M. I., Nachimuthu, P., Varga, T., Shutthanandan, V., Jiang, W., Kuchibhatla, Satyanarayana V. N. T., Thevuthasan, S., Seal, S., Kayani, A.
Format:	Artikel
Sprache:	eng
Schlagworte:	Al2O3 CeO2 crystalline Environmental Molecular Sciences Laboratory epitaxial grown growth Influence MATERIALS SCIENCE MOLECULAR BEAM EPITAXY ORIENTATION OXYGEN quality rate THIN FILMS X-RAY DIFFRACTION
Online-Zugang:	Volltext
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