Improvement of Thermal Stability of Nickel Silicide Using Co-sputtering of Ni and Ti for Nano-Scale CMOS Technology

In this paper, a thermally stable nickelsilicide technology using the co-sputtering of nickeland titanium atoms capped with TiN layer isproposed for nano-scale metal oxide semiconductorfield effect transistor (MOSFET) applications. Theeffects of the incorporation of titanium ingredient inthe co-sputtered Ni layer are characterized as afunction of Ti sputtering power. The differencebetween the one-step rapid thermal process (RTP)and two-step RTP for the silicidation process has alsobeen studied. It is shown that a certain proportion oftitanium incorporation with two-step RTP has thebest thermal stability for this structure. KCI Citation Count: 4