Characterization of MBE-Grown ZnSe Thin Films by Using Photocurrent Spectroscopy

Characterization of MBE-Grown ZnSe Thin Films by Using Photocurrent Spectroscopy

High-quality ZnSe thin films were grown on GaAs substrates by using molecular beam epitaxy (MBE). Low-temperature and temperature-dependent photoluminescence (PL) measurements revealed the high crystal quality of the sample. However, photocurrent spectroscopy showed the existence of defects originat...

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Veröffentlicht in:Journal of the Korean Physical Society 2006, 49(3), , pp.890-893
Hauptverfasser: Myunghoon Jung, Jiho Chang, Dongcheol Oh, 고항주, Hongseung Kim, Junsuk Song, Kwanghee Kim, Seunghwan Park, Takafumi Yao
Format: Artikel
Sprache:kor
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물리학
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Zusammenfassung:High-quality ZnSe thin films were grown on GaAs substrates by using molecular beam epitaxy (MBE). Low-temperature and temperature-dependent photoluminescence (PL) measurements revealed the high crystal quality of the sample. However, photocurrent spectroscopy showed the existence of defects originating from the interface. Insertion of a buffer layer at a low growth temperature is suggested for improving the crystallinity further. KCI Citation Count: 6
ISSN:0374-4884
1976-8524