Passivation mechanism and long-term stability: Insights from SEM-EDS analysis of passivated CdZnTeSe crystal

This study investigates the efficient passivation of CdTe-based semiconductor crystals, focusing on the long-term stability and underlying mechanisms of NaOCl passivation. CdZnTeSe crystals were grown, processed, and passivated with NaOCl, and their surface characteristics were studied using SEM-EDS and XPS. The passivation was found to significantly enhance the surface resistance, with a sustained effect for more than 90 s, attributed to the formation of a tellurium oxide layer. The passivation process was further elucidated through detailed morphological and compositional analyses. The NaOCl-passivated crystals exhibited improved electrical and spectroscopic properties in radiation detection, with a prolonged stability of 60–90 days, which are longer compared to other passivants. Additionally, the feasibility of NaOCl passivation on a CdZnTeSe detector was explored, showcasing enhanced material resistance and spectroscopic performance. The study concludes with insights into the potential industrial application of NaOCl passivation for CdTe-based radiation detectors.